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    128K X 8 EEPROM Search Results

    128K X 8 EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1EX24128BSAS0I#U0 Renesas Electronics Corporation Two-wire serial interface 128k EEPROM (16-kword × 8-bit) Visit Renesas Electronics Corporation
    R1EX24128BSAS0I#S0 Renesas Electronics Corporation Two-wire serial interface 128k EEPROM (16-kword × 8-bit) Visit Renesas Electronics Corporation
    R1EX24128BTAS0I#U0 Renesas Electronics Corporation Two-wire serial interface 128k EEPROM (16-kword × 8-bit) Visit Renesas Electronics Corporation
    R1EX24128BSAS0I#K0 Renesas Electronics Corporation Two-wire serial interface 128k EEPROM (16-kword × 8-bit) Visit Renesas Electronics Corporation
    R1EX24128BTAS0I#S0 Renesas Electronics Corporation Two-wire serial interface 128k EEPROM (16-kword × 8-bit) Visit Renesas Electronics Corporation

    128K X 8 EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    79LV0832

    Abstract: Maxwell 79lv0832
    Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)


    Original     		PDF 79LV0832 32-Bit) I/016-23 79LV0832 32-bit Maxwell 79lv0832

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    79LV0408

    Abstract: Maxwell 79lv0408
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408 Maxwell 79lv0408

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16

    79LV0408

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16 79LV0408

    transistor comparison data sheet

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 transistor comparison data sheet

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural


    Original     		PDF 79LV0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation


    Original     		PDF 79C0408 A0-16 79C0408

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:


    Original     		PDF 79C0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness (RP Package):


    Original     		PDF 79C0408 A0-16

    Untitled

    Abstract: No abstract text available
    Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 I/O0-7 • • • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission


    Original     		PDF 79LV0408 A0-16

    CY14B101P-SFXI

    Abstract: No abstract text available
    Text: CY14B101P 1 Mbit 128K x 8 Serial SPI nvSRAM with Real Time Clock 1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock Features • ■ 1 Mbit Nonvolatile SRAM ❐ Internally organized as 128K x 8 ❐ STORE to QuantumTrap nonvolatile elements initiated


    Original     		PDF CY14B101P CY14B101P-SFXI

    AT24C128C-SSPD

    Abstract: Atmel 122 AT24C128C eeprom atml ATMEL SERIAL EEPROM truncation code
    Text: Atmel AT24C128C and Atmel AT24C256C I2C Automotive Temperature Serial EEPROM 128K 16,384 x 8 , 256K (32,768 x 8) PRELIMINARY DATASHEET Features  Standard-voltage operation  VCC = 2.5V to 5.5V  Automotive temperature range –40C to 125C  Internally organized 16,384 x 8 (128K), 32,768 x 8 (256K)


    Original     		PDF AT24C128C AT24C256C 400kHz AT24C128C-SSPD Atmel 122 eeprom atml ATMEL SERIAL EEPROM truncation code

    Untitled

    Abstract: No abstract text available
    Text: Atmel AT24C128C and Atmel AT24C256C I2C Automotive Temperature Serial EEPROM 128K 16,384 x 8 , 256K (32,768 x 8) PRELIMINARY DATASHEET Features  Standard-voltage operation  VCC = 2.5V to 5.5V  Automotive temperature range –40C to 125C  Internally organized 16,384 x 8 (128K), 32,768 x 8 (256K)


    Original     		PDF AT24C128C AT24C256C 400kHz

    k24C256

    Abstract: K24C128 24C256 24c256 eeprom eeprom 24C256 K24C BL24C256 BL24C128 K24C128/K24C256
    Text: Shanghai Belling Corp., Ltd BL24C128/256 BL24C128/BL24C256 128K bits 16,384 X 8 / 256K bits (32,768 X 8) Two-wire Serial EEPROM Features Two-wire Serial Interface VCC = 1.8V to 5.5V Bi-directional Data Transfer Protocol Internally Organized BL24C128, 16,384 X 8 (128K bits)


    Original     		PDF BL24C128/256 BL24C128/BL24C256 BL24C128, BL24C256, 64-byte 128K/256K) BL24C128/BL24C256 MO-153, k24C256 K24C128 24C256 24c256 eeprom eeprom 24C256 K24C BL24C256 BL24C128 K24C128/K24C256

    24c256

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 128K bits 16,384 X 8 / 256K bits (32,768 X 8) Two-wire Serial EEPROM Two-wire Serial EEPROM LR 24C128/LR 24C256 Features Two-wire Serial Interface VCC = 1.8V to 5.5V Bi-directional Data Transfer Protocol Internally Organized LR24C128, 16,384 X 8 (128K bits)


    Original     		PDF 24C128/LR 24C256 LR24C128, LR24C256, 64-byte 128K/256K) LR24Cxxx: LR24CxxxD: LR24CxxxT: MO-153, 24c256

    Untitled

    Abstract: No abstract text available
    Text: 4 Megabit CMOS EEPROM DPE128X32V DESCRIPTION: The DPE128X32V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 128K X 32, 256K X 16 or 512K X 8. The module is built with four low-power CMOS 128K X 8


    Original     		PDF DPE128X32V DPE128X32V 16-bit 32-bit 128-BWDW 30A014-25

    Untitled

    Abstract: No abstract text available
    Text: STK25CA8 128K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Module Preliminary FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 128K x 8 Static RAM, BatteryBacked RAM or EEPROM • 35ns and 45ns Access Times


    Original     		PDF STK25CA8 200ns 100-Year 32-Pin STK25CA8 ML0021

    cmos vs ttl

    Abstract: STK25CA8
    Text: STK25CA8 128K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Module FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 128K x 8 Static RAM, BatteryBacked RAM or EEPROM • 35ns and 45ns Access Times


    Original     		PDF STK25CA8 200ns 100-Year 32-Pin STK25CA8 cmos vs ttl

    Untitled

    Abstract: No abstract text available
    Text: D P E 4 1 2 8 8 128K X 8 CMOS EEPROM MODULE DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.


    OCR Scan     		PDF DPE41288 64-Bytes 500mV 30A01M3

    Untitled

    Abstract: No abstract text available
    Text: □PM DPE41288 Dense-Pac Microsystems. Inc. 128K X 8 CMOS EEPROM MODULE O DESCRIPTION: The DPE41288 is a high-performance Electrically Erasable and Programmable Read O nly Memory EEPROM module organized 128K X 8. The DPE41288 is pin compatable with the JEDEC Standard for 128K X 8 SRAM Monolithic devices.


    OCR Scan     		PDF DPE41288 DPE41288 64-Bytes 500mV 30a01

    D28F512

    Abstract: flash eeprom D28F010
    Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent


    OCR Scan     		PDF D28F512 D28F010 MC48F512 MC48F010 64KX8 48F512 48F010 48F010 1024K flash eeprom