79LV0832
Abstract: Maxwell 79lv0832
Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)
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79LV0832
32-Bit)
I/016-23
79LV0832
32-bit
Maxwell 79lv0832
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Untitled
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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79LV0408
Abstract: Maxwell 79lv0408
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
79LV0408
Maxwell 79lv0408
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
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79LV0408
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
79LV0408
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transistor comparison data sheet
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
transistor comparison data sheet
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PDF
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Untitled
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural
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79LV0408
A0-16
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PDF
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation
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79C0408
A0-16
79C0408
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE 79C0408 A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 FEATURES DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness:
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness (RP Package):
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79C0408
A0-16
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Untitled
Abstract: No abstract text available
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM 1CY7C0851V CY7C0852V CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V PRELIMINARY 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V3
64K/128K
128K/256K
1CY7C0851V
CY7C0852V
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9l reset
Abstract: CY7C0852V-133AC CY7C09289V CY7C09369V CY7C09379V
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V3
64K/128K
128K/256K
CY7C0851V/CY7C0852V
CY7C0831V/CY7C0832V
9l reset
CY7C0852V-133AC
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Untitled
Abstract: No abstract text available
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V
FLEx18TM
64K/128K
128K/256K
CY7C0837AV
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1.0mm pitch BGA
Abstract: No abstract text available
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V
FLEx18TM
64K/128K
128K/256K
CY7C0837AV
1.0mm pitch BGA
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BW144
Abstract: BB144 JEDEC 144ball FBGA
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V
FLEx18TM
64K/128K
128K/256K
CY7C0837AV
BW144
BB144
JEDEC 144ball FBGA
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1.0mm pitch BGA
Abstract: No abstract text available
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389VFLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0837AV CY7C0830AV/CY7C0831AV CY7C0832AV/CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V
FLEx18TM
64K/128K
128K/256K
CY7C0837AV
1.0mm pitch BGA
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CY62128
Abstract: CY62128V JESD22 CY62128-SC
Text: Cypress Semiconductor Qualification Report QTP# 97195 VERSION 1.0 October, 1997 128K x 8 SRAM - R32 Technology - Fab4 Qualification CY62128 128K x 8 Static Ram 5V Operation CY62128V 128K x 8 Static Ram (3V Operation) Cypress Semiconductor, Inc. 128K x 8 SRAM - R32 Technology
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CY62128
CY62128V
CY62128/CY62128V
32-pin,
400-mil
85C/85
CY62128-SC
/-65C
CY62128V-SC
CY62128
CY62128V
JESD22
CY62128-SC
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Untitled
Abstract: No abstract text available
Text: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 I/O0-7 • • • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission
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79LV0408
A0-16
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TSOP 1376
Abstract: MX27C2048 MX27C2100
Text: Introduction Selection Guide MX27C2100/27C2048 2M-BIT 256K x 8/128K x 16 CMOS EPROM FEATURES • 128K x 16 organization(MX27C2048, JEDEC pin out) • 256K x 8 or 128K x 16 organization(MX27C2100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/90/120/150 ns
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MX27C2100/27C2048
8/128K
MX27C2048,
MX27C2100,
MX27C2048)
MX27C2100/2048
MX27C2100)
TSOP 1376
MX27C2048
MX27C2100
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Untitled
Abstract: No abstract text available
Text: CY14V101LA CY14V101NA PRELIMINARY 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14V101LA) or 64K x 16 (CY14V101NA) ■ Hands Off Automatic STORE on Power Down with only a small
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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CY7C09289V
Abstract: CY7C09369V CY7C09379V
Text: CY7C093794V CY7C093894V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM CY7C0850AV/CY7C0851AV CY7C0852AV/CY7C0853AV FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM Features Functional Description
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CY7C093794V
CY7C093894V
CY7C09289V
CY7C09369V
CY7C09379V
CY7C09389V3
64K/128K
128K/256K
CY7C0850AV/CY7C0851AV
CY7C0852AV/CY7C0853AV
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