Untitled
Abstract: No abstract text available
Text: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/M48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip
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E/M48F010
48F010
128KX8FLASH
MD400069/A
ains33
E/M47F01
E/M47F010
E/M47F010
MD400084/-
Q002775
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Untitled
Abstract: No abstract text available
Text: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo
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EDI7F81024C
ED17F81024C
128Kx8
EDI7F81024C
A17-A19
3D114
01fl23
EDI7F81024C120BSC
EDI7F81024C150BSC
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8Kx8 eprom
Abstract: 32Kx8 EPROM128KX8 8KX8
Text: VERSAPAC CMOS MEMORY FAMILY SRAM / EPROM/ /EEPROM / FLASH SRAM / EEPROM / FLASH FLASH with Plastic PLCCs EPROM MIXED TEC H N O LO G IES GENERAL DESCRIPTION: The VERSAPAC series of memory modules consist of SRAM, ERO M , EEPEORM or Flash EEPROM devices in ceramic LC C packages (Flash EEPROMs available in
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66-pin90ns
32Kx8
128Kx8
128Kx8
250ns
300ns
DP14314180V-C
8Kx8 eprom
EPROM128KX8
8KX8
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Untitled
Abstract: No abstract text available
Text: a WSF128K32-XH2X M/HITE /MICROELECTRONICS 128Kx32 SRAM/FLASH MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A cce ss T im e s o f 25ns SRAM and 120ns (FLASH) ■ ■ A cce ss Tim es o f 25ns (SR A M ) and 90ns (FLASH) ■ S ector A rc h ite c tu re
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WSF128K32-XH2X
128Kx32
120ns
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