d2516ec
Abstract: KE4CN2H5A kingston memory schematic
Text: REF: BBONEBLK_SRM BeagleBone Black System Reference Manual BeagleBone Black System Reference Manual Revision C.1 May 22, 2014 Author: Gerald Coley gerald@beagleboard.org Contributing Editor: Robert P J Day Page 1 of 126 Rev C.1 REF: BBONEBLK_SRM BeagleBone Black System
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bfp640f
Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
Text: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17
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BFP640F
transistor cross reference chart
AN082
BFP640
amplifier TRANSISTOR 12 GHZ
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414EH
Abstract: AQY410EH AQY410EHAX AQY410EHAZ AQY412EH AQY412EHAZ
Text: GU-E PhotoMOS AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 The attainment of economical pricing will broaden its market even further.
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AQY41EH)
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY414EH
AQY412EH
AQY410EH
414EH
AQY410EHAX
AQY410EHAZ
AQY412EHAZ
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412EH
Abstract: AQY412EHAX 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Text: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 1. High cost-performance type of PhotoMOS relay 1 Form B output
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AQY41
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY414EH
AQY412EH
AQY410EH
412EH
AQY412EHAX
414EH
AQY410EHA
AQY414EH
AQY414EHA
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Untitled
Abstract: No abstract text available
Text: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode
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AQY41rEH
126inch,
AQY410EH)
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Untitled
Abstract: No abstract text available
Text: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode
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AQY41rEH
126inch,
AQY410EH)
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412EH
Abstract: AQY412EHA AQY412EHAX aqy410 AQY414EH
Text: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) AQY41PEH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3
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AQY41PEH)
AQY410EH,
414EH)
AQY412EH)
AQY41PEH
AQY410EH
AQY412EH
AQY410EH
AQY414EH
412EH
AQY412EHA
AQY412EHAX
aqy410
AQY414EH
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AQY412EHA
Abstract: 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Text: VDE GU-E PhotoMOS AQY41PEH TESTING (AQY410EH, 414EH) (AQY412EH) General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 The attainment of economical pricing will
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AQY41
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY414EH
AQY412EH
AQY410EH
AQY412EHA
414EH
AQY410EHA
AQY414EH
AQY414EHA
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AQY410EHA datasheet
Abstract: AQY410EHAX AQY410EH AQY410EHA AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Text: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of power MOS Passivation membrane Intermediate Source electrode Gate electrode
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AQY41rEH
126inch,
AQY410EHA datasheet
AQY410EHAX
AQY410EH
AQY410EHA
AQY410EHAZ
AQY414EH
AQY414EHA
AQY414EHAX
AQY414EHAZ
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Untitled
Abstract: No abstract text available
Text: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of
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AQY41EH)
126inch,
AQY410EH)
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Untitled
Abstract: No abstract text available
Text: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch Cross section of the normally-closed type of
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AQY41EH)
126inch,
AQY410EH)
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L200CUB500-5VF
Abstract: L200CUB500-3 DSDC0026 L200CUB500N-3
Text: LTR REVISION APPD E 09-29-98 SA F 03-16-00 SA Ø.224 [5.7] Ø.197 [5.0] Ø.197 [5.0] Ø.224 [5.7] .177 [4.5] .126 [3.2] .039 [1.0] DATE .339 [8.6] .152 [3.9] .039 [1.0] .059 MAX [1.5] .339 [8.6] .059 MAX [1.5] 1.00 [25.4] MIN 1.00 [25.4] MIN ANODE + ANODE (+)
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L200CUB500-XXVF
L200CUB500N-XXVF
063in)
ANSI-Y14
DSDC0026
8Z410
L200CUB500-5VF
L200CUB500-3
DSDC0026
L200CUB500N-3
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Untitled
Abstract: No abstract text available
Text: LTR REVISION APPD E 09-29-98 SA F 03-16-00 SA Ø.224 [5.7] Ø.197 [5.0] Ø.197 [5.0] Ø.224 [5.7] .177 [4.5] .126 [3.2] .039 [1.0] DATE .152 [3.9] .339 [8.6] .339 [8.6] .039 [1.0] .059 MAX [1.5] .059 MAX [1.5] 1.00 [25.4] MIN 1.00 [25.4] MIN ANODE + ANODE (+)
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L200CUB500-XXVF
L200CUB500N-XXVF
063in)
ANSI-Y14
8Z410
DSDC0026
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Untitled
Abstract: No abstract text available
Text: GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of
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AQY41EH)
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY410EH
AQY414EH
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AQY41EH
Abstract: AQY412 AQY414EH
Text: GU-E PhotoMOS AQY41❍EH TESTING General use and economy type. DIP (1 Form B) 4-pin type. Reinforced insulation 5,000V type. 4.78 .188 6.4 .252 3.2 .126 4.78 .188 3. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have
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AQY41EH)
AQY410EH,
414EH)
AQY412EH)
126inch,
AQY410EH)
AQY410EH
AQY412EH
AQY410EH
AQY41EH
AQY412
AQY414EH
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AQY410EH
Abstract: AQY410EHA AQY410EHAX AQY410EHAZ AQY414EH AQY414EHA AQY414EHAX AQY414EHAZ
Text: AQY41❍EH TESTING GU General Use -E Type 1-Channel (Form B) 4-pin Type PhotoMOS RELAYS FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 3. Compact 4-pin DIP size The device comes in a compact (W)6.4x(L)4.78×(H)3.2mm (W).252×(L).188×(H).126inch, 4-pin DIP
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AQY41rEH
126inch,
AQY410EH)
AQY410EH
AQY410EHA
AQY410EHAX
AQY410EHAZ
AQY414EH
AQY414EHA
AQY414EHAX
AQY414EHAZ
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MT1389
Abstract: MT1389EE MT1389EE-L1 MT1389E MT1389* application ioa18 mt1389eel1 RD11 spdif input sc 90 servo micro motor
Text: 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 AGND DVDA DVDB DVDC DVDD DVDRFIP DVDRFIN
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DVDD18
IOA18
IOA19
MT1389
MT1389EE
MT1389EE-L1
MT1389E
MT1389* application
ioa18
mt1389eel1
RD11
spdif input
sc 90 servo micro motor
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Untitled
Abstract: No abstract text available
Text: % %( 7DQWDOXP &KLS &DSDFLWRUV 6WDQGDUG &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/ 9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ +LJK YROXPHWULF HIILFLHQF\
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Untitled
Abstract: No abstract text available
Text: %+ %+ 7DQWDOXP &KLS &DSDFLWRUV +LJK&DS &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/ 9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ 8OWUDKLJK YROXPHWULF HIILFLHQF\
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Untitled
Abstract: No abstract text available
Text: %3 %3 7DQWDOXP &KLS &DSDFLWRUV 3HUIRUPDQFH &RQVWUXFWLRQ • 3RODU WDQWDOXP FDSDFLWRUV ZLWK VROLG HOHFWURO\WH ■ ODPHUHWDUGDQW SODVWLF FDVH 8/ 9 ■ 2SWLRQDOO\ WLQQHG RU JROGSODWHG WHUPLQDOV )HDWXUHV ■ ■ ■ ■ ■ ■ ■ ■ ■
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB
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DSD1796
SLES101
24BIT,
192kHz
24-Bit
28-Lead
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB
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DSD1796
SLES101
24BIT,
192kHz
24-Bit
28-Lead
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments DSD1796 SLES101A – DECEMBER 2003 – REVISED NOVEMBER 2006 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution
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DSD1796
SLES101A
24BIT,
192kHz
24-Bit
28-Lead
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DIX1700
Abstract: DF1706 Pacific Microsonics AES17 DF1704 DSD1792 DSD1796 DSD1796DB DSD1796DBR PMD200
Text: BurrĆBrown Products from Texas Instruments DSD1796 SLES101 – DECEMBER 2003 24ĆBIT, 192ĆkHz SAMPLING, ADVANCED SEGMENT, AUDIO STEREO DIGITALĆTOĆANALOG CONVERTER FEATURES D Supports Both DSD and PCM Formats D 24-Bit Resolution D Analog Performance: − Dynamic Range: 123 dB
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DSD1796
SLES101
24BIT,
192kHz
24-Bit
DIX1700
DF1706
Pacific Microsonics
AES17
DF1704
DSD1792
DSD1796
DSD1796DB
DSD1796DBR
PMD200
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