HC123A
Abstract: 152 diode M74HC123 HC123 M54HCXXXF1R M74HCXXXM1R 74ls123 time delay 123a diode
Text: M54HC123/123A M74HC123/123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR . . . . . . . . . HIGH SPEED tPD = 25 ns TYP at VCC = 5V LOW POWER DISSIPATION STANDBY STATE ICC=4 µA (MAX.) AT TA=25°C ACTIVE STATE ICC = 200 µA (TYP.) AT VCC=5V HIGH NOISE IMMUNITY
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M54HC123/123A
M74HC123/123A
54/74LS123
M54/74HC123
HC123A
152 diode
M74HC123
HC123
M54HCXXXF1R
M74HCXXXM1R
74ls123 time delay
123a diode
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HC123A
Abstract: HC123 M54HCXXXF1R M74HCXXXM1R
Text: M54HC123/123A M74HC123/123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR . . . . . . . . . HIGH SPEED tPD = 25 ns TYP at VCC = 5V LOW POWER DISSIPATION STANDBY STATE ICC=4 µA (MAX.) AT TA=25°C ACTIVE STATE ICC = 200 µA (TYP.) AT VCC=5V HIGH NOISE IMMUNITY
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M54HC123/123A
M74HC123/123A
54/74LS123
M54/74HC123
HC123A
HC123
M54HCXXXF1R
M74HCXXXM1R
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SOD-123
Abstract: XBS104S14
Text: XBS104S14 ETR1609-002 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS104S14
ETR1609-002
OD-123A
SOD-123
XBS104S14
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Untitled
Abstract: No abstract text available
Text: XBS104S14 ETR1609-002 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS104S14
ETR1609-002
OD-123A
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Untitled
Abstract: No abstract text available
Text: XBS104S14R-G ETR1609-003 Schottky Barrier Diode, 1A, 40V, SOD-123A Package APPLICATIONS FEATURES Forward Voltage : VF=0.49V TYP. Rectification Forward Current : IF(AV)=1A Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V
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XBS104S14R-G
ETR1609-003
OD-123A
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XBS104S14R-G
Abstract: XBS104S14R Schottky Barrier Diode XBS104S14 123a diode
Text: XBS104S14R-G ETR1609-003 Schottky Barrier Diode, 1A, 40V, SOD-123A Package •APPLICATIONS ■FEATURES Forward Voltage : VF=0.49V TYP. ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS104S14R-G
ETR1609-003
OD-123A
XBS104S14R-G
XBS104S14R
Schottky Barrier Diode
XBS104S14
123a diode
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PC925 sharp
Abstract: pc925 AN 7580 circuit diagram ED-95 95123 pc925I
Text: PREPARED BY: y, y& Jm /.,yf& DATE : APPROVED BY: . / .* SPEC. DATE: Jm 12,1*6 SHARP No. ED-95 123A ISSUE June 11, 1996 PAGE 12 Pages ELECTRONIC COMPONENTS GROUP SHARP CORPORATION REPRESENTATIVE DMSION SPECIFICATION OPTO-ELECTROMC DEVICES DfV. F DEVICE SPECIFICATION FOR
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ED-95
PC925
PC925)
PC925 sharp
pc925
AN 7580 circuit diagram
95123
pc925I
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B716D
Abstract: No abstract text available
Text: RELIABILITY REPORT DATE: 4/7/04 QUALITY ENG : DANA TRINH PART NUMBER PURPOSE: Qualify HL BASE ARRAY PACKAGE TYPE : ASSEMBLY LOCATION D/C # LOT # FAB # ARRAY PROCESS SY88813 10L MSOP UNISEM 234M B716DMEB MICREL HL ASSET 1 SY88922 10L MSOP UNISEM 123A B323C
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SY88813
B716DMEB
SY88922
B323C
SY88903
B538C
SY88823
2B33002M15
SY88803
155Mbps
B716D
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123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge
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123AP
NTE159)
NTE396)
NTE375)
NTE159
NTE123AP
NTE290A
935-6072
NTE184
NTE199
NTE128
NTE293
NTE130
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diode SR60
Abstract: BR2032 h2a CR123A -40 596589 SR60 diode RS Component 596-618 diode sr45 Rechargeable BATTERY AA 1.5V cr2032 charge recharge CR123A
Text: Issued November 1994 K18786 Non-rechargeablebatteries Introduction A comprehensive range of non-rechargeable batteries alkaline, zinc chloride, lithium, silver and mercury primary cells . Each chemical couple used is suited to a particular application, the following tables detail the
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K18786
diode SR60
BR2032 h2a
CR123A -40
596589
SR60 diode
RS Component 596-618
diode sr45
Rechargeable BATTERY AA 1.5V
cr2032 charge recharge
CR123A
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74HC12
Abstract: HC 123A diode V54 74hc123
Text: fZ 7 m 7# M54H C 123/123A M 74H C 123/123A S G S -T H O M S O N R iilD O œ iL IlO T O iD O i DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tp D = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc=4 |iA (MAX.) AT T a=25‘ C
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123/123A
123/123A
54/74LS123
M54/74HC123
HC123A)
HC123)
74HC12
HC 123A
diode V54
74hc123
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VHC 123A
Abstract: VHC123A
Text: 123A National Semiconductor 74VHC123A Dual Retriggerable Monostable Multivibrator General Description The 'VHC123A is an advanced high speed CMOS Monosta ble Multivibrator fabricated with silicon gate CMOS technol ogy. It achieves the high speed operation similar to equiva
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74VHC123A
VHC123A
74VHC123A)
VHC 123A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74VHC123,221 AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC123AF, TC74VHC123AFN, TC74VHC123AFT TC74VHC221AF, TC74VHC221AFN, TC74VHC221AFT DUAL MONOSTABLE MULTIVIBRATOR TC 74V H C 123A F/A FN / AFT RETRIGGERBLE TC74VHC221 A F / A F N / A F T NON - RETRIGGERBLE
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TC74VHC123
TC74VHC123AF,
TC74VHC123AFN,
TC74VHC123AFT
TC74VHC221AF,
TC74VHC221AFN,
TC74VHC221AFT
TC74VHC221
TC74V
C123A
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Untitled
Abstract: No abstract text available
Text: - TC74VHC123AF/AFN/AFS TC74VHC221AF/AFN/AFS DUAL MONOSTABLE MULTIVIBRATOR TC74VHC123AF / AFN / AFS RETRIGGERBLE TC74VHC221AF / AFN / AFS NON - RETRIGGERBLE The T C 74V H C 123A / 221A M O N O STA BLE a re h ig h sp eed M U LTIV IBR A TO R fabricated
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TC74VHC123AF/AFN/AFS
TC74VHC221AF/AFN/AFS
TC74VHC123AF
TC74VHC221AF
uty/100
TC74VHC123A
D27eT7
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74LS123D
Abstract: 54hc123 da rn Appros 1N1415 74hc123 HC123A
Text: SGS-THOMSON m54Hc 123/123 a RfflDiSœiLiOÏÏMiDgi M74HC123/123A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIG HSPEED tpD = 25 ns TYP at V cc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lcc= 4fiA (MAX.) A T T a=25°C ACTIVE STATE lec = 200 jiA (TYP.) AT Vcc=5V
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M74HC123/123A
54/74LS123
74LS123D
54hc123
da rn
Appros
1N1415
74hc123
HC123A
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74HC
Abstract: M16A M16D MM74HC123A MM74HC123AM MM74HC123AMTC MM74HC123ASJ MTC16
Text: Revised February 1999 E M IC O N D U C T G R T M General Description T he M M 74H C 123A high speed m onostable m ultivibrators one shots utilize advanced silicon-gate C M O S te ch n ol ogy. T h e y feature speeds com parable to low pow er Schottky TTL circuitry w hile retaining the low pow er and high
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MM74HC123A
MM74HC123A
MM74H
74HC
M16A
M16D
MM74HC123AM
MM74HC123AMTC
MM74HC123ASJ
MTC16
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HC123A
Abstract: No abstract text available
Text: / = 7 Ä 7# S C S -T H O M S O N « M im g ïïM M S M 54H C 123/123A M 7 4 H C 123/ 12 3 A DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tPD = 25 ns TYP at Vcc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc=4 nA (MAX.) AT Ta=25'C ACTIVE STATE Icc = 200 nA (TYP.) AT Vcc=5V
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123/123A
54/74LS123
3/123A
HC123)
HC123A)
0054SG4
HC123A
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74HC123AN
Abstract: 74HC123AM 74HC123A
Text: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol
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MM74HC123A
MM74HC123A
74HC123AN
74HC123AM
74HC123A
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m-38510/123
Abstract: M-38510/123A marking 0z MRC 100-6
Text: MIL-M-38510/123A 21 September 1982 SUPERSEDI NG-MIL -M-38510/123 21 J u l y 1980 MILITARY SPECIFICATION M I C R O C I RC U I TS , LINEAR, NEGATIVE LOGI C, CMOS ANALOG SWITCH, MONOLITHIC S I L I CO N T h i s s p e c i f i c a t i o n i s a p p r o v e d f o r use by a l l D e p a r t
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MIL-M-38510/123A
MIL-M-38510/123
MIL-M-38510.
m-38510/123
M-38510/123A
marking 0z
MRC 100-6
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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Sylvan58MC
09A001-00
66X0003-001
50746A
68X0003
68X0003-001
T-E0137
93B3-3
93B3-4
st178
diode E1110
CK705
ecg semiconductor replacement guide
CS1237
ME1120
TE1088
1N942
1N733A
Delco DTG-110B transistor
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123AP
Abstract: No abstract text available
Text: designed for . . . Siliconix G123 H M onolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals Reduces External C om ponent Requirements Internal Zener Diode Protects the Gate Four Switches Per Chip ■ M ultiplexing Intergrated MOS FET fo r Each Gate to
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10c102
Abstract: HC 123A
Text: A S E M I R C I C C D N H I L D JDu ly 1 9 f Ä ,M Revised April 1999 D U C T D R I 'M General Description Features • High Speed: t PD = 8.1 ns typ at TA = 25°C ■ Low Power Dissipation: lc c = 4 jiA (Max) at T A = 25°C ■ A ctive State: lc c = 600 (iA (Max) at T A = 25°C
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74VHC123A
74VHC123A
10c102
HC 123A
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74hc123a
Abstract: VHC123 VHC123A 74hc123a fairchild RX-3 74VHC123A 74VHC123AM 74VHC123AMTC 74VHC123ASJ M16A
Text: p ly1 9 !3 Ä,i c o o Revised April 1999 E M IC O N D U C T G R T M General Description An input protection circuit ensures that 0 to 7V can be applied to the input pins without regard to the supply volt age. This device can be used to interface 5V to 3V systems
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JDuly19H93Ã
74VHC123A
VHC123A
74hc123a
VHC123
74hc123a fairchild
RX-3
74VHC123A
74VHC123AM
74VHC123AMTC
74VHC123ASJ
M16A
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SG323K
Abstract: SG223K center tapped transformer LM1235 SG-123 SG323 SG123K SG123AISG223AISG323A SG123 SG223
Text: Silicon Generai. U M A R SG123AI SG223AI SG323A SG123 / SG223 / SG323 I N T K , R A T I O I R< I l l s 1 5 VOLT— 3-AMP POSITIVE REGULATOR DESCRIPTION FEATURES The SG123A fa m ily is an im proved version of th e p o p u la r LM 1235 Volt, 3 A m p R e g u la tor line.
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SG123AISG223AISG323A
SG123
SG223
SG323
SG123A
LM1235
SG123A.
SG323K
SG223K
center tapped transformer
SG-123
SG323
SG123K
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