3001C
Abstract: 3004C HER3001C HER3005C
Text: HER3001C THRU HER3005C HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 30 Amperes .638 16.2 Low leakage. .236(6.0) .197(5.0) Low power loss,high efiiciency. .106(2.7) .067(1.7) MAX High current capability. High surge capability. .122(3.1)
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HER3001C
HER3005C
400Volts
UL94V-0
MIL-STD-202E
50mVp-p
50/100ns/cm
3001C
3004C
HER3005C
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HER3001-3005
Abstract: 3001C 3004C CJ125 HER3004C
Text: HER3001-3005 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 30 Amperes .638 16.2 Low leakage. .236(6.0) .197(5.0) Low power loss,high efiiciency. .106(2.7) .067(1.7) MAX High current capability. High surge capability. .122(3.1) .083(2.1)
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HER3001-3005
400Volts
UL94V-0
MIL-STD-202E
50mVp-p
50/100ns/cm
HER3001-3005
3001C
3004C
CJ125
HER3004C
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Untitled
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL KBJ4A - - - KBJ4M VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ4 Rating to 1000V PRV Surge overload rating to 150 Am peres peak .189 4.8 .173(4.4) .134(3.4) .122(3.1) Ideal for printed circuit board
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MIL-STD-202
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TIC 122 Transistor
Abstract: T-con tic 122
Text: BL GALAXY ELECTRICAL KBJ8A - KBJ8M VOLTAGE RANGE: 50 - 1000 V CURRENT: 8.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ8 Rating to 1000V PRV Surge overload rating to 200 Am peres peak .203 5.16 .189(4.8) .134(3.4) .122(3.1) Ideal for printed circuit board
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MIL-STD-202
TIC 122 Transistor
T-con
tic 122
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tic 122
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL KBJ6A - KBJ6M VOLTAGE RANGE: 50 - 1000 V CURRENT: 6.0 A SILICON BRIDGE RECT IFIERS FEATURES KBJ6 Rating to 1000V PRV .189 4.8 .173(4.4) Surge overload rating to 150 Am peres peak .134(3.4) .122(3.1) Ideal for printed circuit board
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MIL-STD-202
tic 122
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Untitled
Abstract: No abstract text available
Text: engineered to light up your design www.vcclite.com 1.800.522.5546 CMD67-21UWC Series White SMT LEDs Description and Features .075±.008 C AT HODE .094 .006 .087±.004 .110±.008 .138±.008 .122±.008 All dimensions in inches. .031 TYP. .020±. 004 Surface Mount T echnology
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CMD67-21UWC
MD67-21UWC
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160X80
Abstract: CM16080-2
Text: CM16080-2 98 89.16 83.3 9.8 10 6.4 DOTS 160X80 13 41.56 47.56 60 75 80 2.54 9.1 1.6 0.52 0.48 0.48 7 0.52 14.2 89.16 98 14 122 AB S OLUT E MAXIMUM R AT ING S ME C HANIC AL DAT A Item S ymbol Min. Max. S upply V oltage Logic S upply V oltage(LC D) Input V oltage
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CM16080-2
160X80
160X80
CM16080-2
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21UWC
Abstract: No abstract text available
Text: CMD67-21UWC Series White SMT LEDs CMD67-21UWC Series White SMT LEDs DESCRIPTION AND FEATURES .075±.008 C AT HODE .094 .006 .087±.004 .110±.008 .138±.008 .122±.008 All dimensions in inches. .020±. 004 Surface Mount T echnology • Tape and reel packaged for high-speed autoinsertion.
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CMD67-21UWC
21UWC
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Untitled
Abstract: No abstract text available
Text: I COAX CONTACT SERIES S ize 8 C oax - H igh P ow er/H igh V oltage C ontacts PDM 15 Series High Power Specifications / Interface Drawings .119 Product Data . 120-122
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STA 401 semiconductor
Abstract: No abstract text available
Text: CS-122 SEMICONDUCTOR DUAL LEVEL SENSING IC with SCHM ITT TRIGGER DESCRIPTION The CS-122 is a dual m o n o lith ic in te g ra te d c irc u it level d e te c to r w ith c o n tro lle d h yste re sis and is d esig n ed fo r a p p lic a tio n s re q u irin g th e fu n c tio n o f a
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CS-122
CS-122
STA 401 semiconductor
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6L6GC
Abstract: 6L6GC tube PENTODE pl tube 6L6gc 6L6GC data 6L6-GC PENTODE pl 36
Text: Beam Power Pentode Construction . Octal T-12 B a s e . 6 or 7 Pin, B6-122, B6-148 B7-12, B7-111 or B7-119 B a s in g . 7S Outline . 12-15
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B6-122,
B6-148
B7-12,
B7-111
B7-119
6L6GC
6L6GC tube
PENTODE pl
tube 6L6gc
6L6GC data
6L6-GC
PENTODE pl 36
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FCH30A06
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH30A06 30A / 60v 3.1 .122) FEATU RES o T0-220AB Fully Molded ODual Diodes - Cathode Common o Low Forw ard V oltage Drop O H igh Surge Capability 0 30 V olts through 60 Volts T ypes Available O Tj = 150°C operation FCH30A. <1
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0A/60v
FCH30A06
T0-220AB
85U12)
FCH30A.
bbl5123
FCH30A06
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Untitled
Abstract: No abstract text available
Text: 20A / 60V SCHOTTKY BARRIER DIODE FCH20A06 3.1 122 »MAX FEATURES u 4.8U 89 MAXi o TO-220AB Fully Molded 10.3i.405l ' MAX A }-6.9(272) 53T2Ï5Î 2.85(.112> ODual Diodes - Cathode Common i w .m \ 15.41 ,606) T7ÎT5531 OLow Forw ard V oltage Drop MAX5' <-'l'6»MAX
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FCH20A06
O-220AB
T5531
FCH20A-
DDDE055
0G02G5b
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Diode 20A/30v
Abstract: FCH20A03L
Text: SCHOTTKY BARRIER DIODE FCH20A03L 20 A/ 30V 3.K-122 FEATURES o T0-220AB Fully Molded ODual Diodes - Cathode Common o L o w Forw ard V oltage Drop O High Surge Capability o T j = 150°C operation 2.5Ì.0MI FCH20A.L Dimensions in mm Inches) Approx. Net Weight : 1.75 Grams
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0A/30V
FCH20A03L
T0-220AB
K-122)
-W-16'
FCH20A.
bbl5123
0D02052
Diode 20A/30v
FCH20A03L
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FCQ20A03L
Abstract: GCQ20A03L wines
Text: SCHOTTKY BARRIER DIODE GCQ20A03L FCQ20A03L 20A/30V 1.40 55) 1.2 047) FEA TU RES KM U09) 3.M.122) MAX 3.7Î.U5] 10.3Î.4ÛS1 o TO-220AB : GCQ20A03L O T0-220AB Fully Molded Isolation : FCQ20A03L oDu'al Diodes - Cathode Common M A Y 5’ 4.K.16DMAX OLow Forw ard V oltage Drop
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0A/30V
GCQ20A03L
FCQ20A03L
O-220AB
GCQ20A03L
T0-220AB
FCQ20A03L
wines
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LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR
Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER TRANSISTOR SWITCHING APPLICATIONS • C om plem entary to TIP 1 25/126/127 ABSOLUTE MAXIMUM RATINGS C h a ra c te rist: TIP 1 20 C ollector-B ase V oltage : TIP 1 21 : TIP122 C ollector-E m ltter V o lta g ' TIP120
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TIP120/121/122
TIP122
TIP120
TIP121
LB 122 transistor
LB 122 NPN TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCH08A06 SA/eov 3.1 122 M AX FEATURES 4.B(.189> ’ MAX] o Sim ilar to TO-220AB Case 10.3(.405) ' MAX ^ 'TfiCTTSJ1* A 6.91272Ï o Fully Molded Isolation OT34Ä) I 15.41.606i R8T533Ï '2.85(1121 a a i o Dual Diodes-Cathode Common o Low Forw ard V oltage Drop
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FCH08A06
O-220AB
8T533Ã
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CPGA144
Abstract: No abstract text available
Text: QL16X24B pASIC 1 FAMILY Very-High-Speed 4K 12K Gate CMOS FPGA PRELIMINARY DATA pASIC HIGHLIGHTS .4000 usable gates, 122 input pins B Very High Speed - ViaLink metal-to-metal programmable-via anti fuse technology, allows data path speeds over 150 MHz, and logic cell
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QL16X24B
16-by-24
QL16x24B
QL16x24
CPGA144
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12gb7
Abstract: 12G-B7 12G B7 B7-119 Scans-0017283 B8-118
Text: 12G-B7 BEAM POWER TUBE 12G B7 is a beam power pentode designed for use as a horizontal deflection amplifier in television receivers utilizing 110 - deflection system picture tube. DIRECT INTERELECTRODE BASE B8-118, B7-119, B6-122, B 5-190 TOP CAP C l-2 Skirted M iniature
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B8-118,
B7-119,
B6-122,
B5-190
525-line,
30-frame
12G-B7
12gb7
12G B7
B7-119
Scans-0017283
B8-118
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diode 10000v
Abstract: No abstract text available
Text: Il II • Il 'Il III VRE120/121/122 Precision High Temperature Reference Supplies THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES APPLICATIONS • WIDE OPERATING RANGE: -55°C TO +180°C • PRECISION A/D and D/A CONVERTERS
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VRE120/121/122
14-PIN
AD2700,
AD2710,
VRE121
VRE120
VRE122
VRE120DS
diode 10000v
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LB 122 transistor
Abstract: LB 122 NPN TRANSISTOR
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO -220 • Complement to TIPI25/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Rating Unit V CBO 60 80 100 V V V V cE O 60 80 100 5 5 8 120
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TIPI25/126/127
TIP120
TIP121
TIP122
LB 122 transistor
LB 122 NPN TRANSISTOR
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TIP 122 127
Abstract: tip 122 tip 127 TIP 122 100 V tip 121
Text: f Z 7 SGS-THOMSON HP120/121/122 ^ 7# T IP 1 2 5 / 1 2 6 /1 2 7 G W fô m iO T « ! COMPLEMENTARY SiLICON POWER DARLINGTON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALES TYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL
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HP120/121/122
TIP120,
TIP121
TIP122
T0-220
TIP125,
TIP126
TIP127.
TIP120/125
TIP 122 127
tip 122
tip 127
TIP 122 100 V
tip 121
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JD127
Abstract: MJ012 6AI diode mj01
Text: rz S 7 “ 7# G S - T H O M S O M JD 122 M JD 127 N 6ai»igS lLlliSTI*§iMBeS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS < INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK
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O-252
TIP122
TIP127
MJD122
MJD127
JD127
MJ012
6AI diode
mj01
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Untitled
Abstract: No abstract text available
Text: Q L16X24B pASIC 1 Family Very-High-Speed CMOS FPGA Rev C pASIC HIGHLIGHTS .4,000 usable ASIC gates, 122 I/O pins Very High Speed - ViaLink metal-to-metal program m able-via antifuse technology, allows counter speeds over 150 MHz and logic cell delays of under 2 ns.
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L16X24B
16-by-24
84-pin
100-pin
144-pin
160-pin
16-bit
16x24B
PF144C
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