Untitled
Abstract: No abstract text available
Text: Product Number: 304-13-122-41-770000 Description: Interconnect Socket .100 Grid; Solderless Pressfit Socket Standard Tail Single Row Through Hole Accepts .015-.025" Leads Plating Code: 13 Shell Plating: 10 µ" Gold over 100 µ" Nickel Inner Contact Plating:
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C17200)
2002/95Annex
420-SEO,
UL94V-0
420-SEO
VRMS/150
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69f firadec
Abstract: ct4e BS9073 80V-Rated 69fe F008 bs9073f008
Text: 090093 FIRADEC_P113A132:030180 FIRADEC - P113A1128 FIRADEC 17/11/09 8:59 Page 10 122 CONDENSATEURS AU TANTALE TANTALUM CAPACITORS Condensateurs tantale à électrolyte gélifié Boîtiers argent étanches Sorties axiales Polarisés Wet tantalum capacitors
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P113A132
P113A1128
CT4E/69F)
CT4E/69FE)
CT4E/69F
CT4E/69FE
69f firadec
ct4e
BS9073
80V-Rated
69fe
F008
bs9073f008
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SATCOM
Abstract: 25xx DRS 102 drs radio dielectric resonator oscillator CTI Communication Techniques
Text: • • • • • • • 4 to 15 GHz or Higher in Bands 500 to 1200 MHz Bandwidths typ. Step Sizes from 10 kHz to 10 MHz -112 to -122 dBc/Hz typ. at 100 kHz Offset Low Spurious High Immunity to Phase Hits vs. Temperature & Microphonics Ideal for High Order QAM Digital Radios
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Untitled
Abstract: No abstract text available
Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
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SiHB24N65E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
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SiHB24N65E
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145
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SiHP24N65E
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiHP24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) • • • • • 0.145 37
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SiHP24N65E
O-220AB
11-Mar-11
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PDF
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t 3866 mosfet
Abstract: No abstract text available
Text: FDA28N50 N-Channel UniFETTM MOSFET 500 V, 28 A, 155 mΩ Features Description • RDS on = 122 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA28N50
t 3866 mosfet
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Untitled
Abstract: No abstract text available
Text: + 3 YELLOW LED CIRCUIT: SPST OFF ON 4 - T D 3.10 [.122 in] New Release 18727 PCR NO A REV BY BLR 12/10/09 DATE BGL 1 1 SCALE TITLE 1.50 [.059 in] 9.70 B [.382 in] .40 [.016 in] 4.00 [.157 in] 5.40 n [.213 in] [.394 in] 1/13/11 THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY
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30VDC
100mA
100Mega-OHMS
500VDC.
100gf
2002/95/EC
B200203
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PDF
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max 474 ic data
Abstract: No abstract text available
Text: OV Series Stackpole Electronics, Inc. Automotive Leaded Dual Function Varistor / RFI Suppressor Resistive Product Solutions Description The OV Series varistor/suppressor is a dual function device that protects against transient voltages and radio-frequency noise generated within 12VDC and 24 VDC
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12VDC
max 474 ic data
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Untitled
Abstract: No abstract text available
Text: OV Series — Automotive Leaded Dual Function Varistors/RFI Suppressors Description The OV Series varistor/suppressor is a dual function device that protects against transient voltages and radio-frequency noise generated within 12VDC and 24VDC vehicle power
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12VDC
24VDC
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2200uF 100v capacitor
Abstract: 18000uf 25v
Text: Aluminum Electrolytic Capacitors NRE-HL Series LONG LIFE, LOW IMPEDANCE, HIGH TEMPERATURE, RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS RoHS Compliant FEATURES • LONG LIFE AT 105OC 4000 ~ 10,000 hrs. • HIGH CAPACITANCE (UP TO 18,000µF) • LOW IMPEDANCE
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105OC
120Hz/20
120Hz)
100Vdc
100KHz/105
2200uF 100v capacitor
18000uf 25v
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PDF
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RESISTOR footprint dimension
Abstract: YC-122 array resistor datasheet mil 210C YC122 YNSC053 YC12-2 Yageo P resistor array 122
Text: DATA SHEET ARRAY CHIP RESISTORS YC122 4Pin/2R; Pb Free 5%, 1% Product specification – Dec 21, 2004 V.1 Supersedes Date of Mar. 06, 2003 sizes 2 x 0402 Product specification Chip Resistor Surface Mount YC SERIES 2 8 122 (Pb Free) SCOPE This specification describes YC122 series chip resistor arrays with lead-free terminations made by thick film
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YC122
YC122
RESISTOR footprint dimension
YC-122
array resistor datasheet mil
210C
YNSC053
YC12-2
Yageo P
resistor array 122
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PDF
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Untitled
Abstract: No abstract text available
Text: Miniature Aluminum Electrolytic Capacitors NRSZ Series LEADED LOW IMPEDANCE AT HIGH FREQUENCY RADIAL LEAD TYPE, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • VERY LOW IMPEDANCE • LONG LIFE AT 105OC 2000 ~ 5000 hrs. • HIGH STABILITY AT LOW TEMPERATURE
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105OC
10x16
10x20
16x25
16x31
16x35
18x35
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Untitled
Abstract: No abstract text available
Text: APPROVED: DATE:_ TITLE: — I 122 „ [3 .10] 1 WMlffi « « M i l im SPECIFICATIONS: Material: Insulator: PBT, glass reinforced, rated UL 94V -0 Insulator color: Black Contacts: Beryllium Copper Plating: Gold flash over Nickel underplate underplate overall
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Untitled
Abstract: No abstract text available
Text: Rev APP R n V FD : D ATF: Description AW0# RELEASED A T IT I F : REVISED DIM. .272 [6.90] Appr .362 [9.20] .181 [4.60] .041 [1.05] - .350 [8.90] .217 [5.50] " .017 [0.44] nnnnn .161 [4.10] Date 4/21/10 12/16/10 ± .063 [1.60] .122 [3.10] .154 [3.90] i I r i
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UL94V-0
S00126T
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 Rev APPRO VED : Description A W 0# - Date 3/18/10 RELEASED Appr TITLE: DATE: _ 654 •1.283 [3 2.60]- / LED 2 GREEN - . 7 9 6 [2 0.22]- lì .122 10] ] □ I \ t - U f .500 [1 2 .7 0 ]' -.696 [ 1 7 . 6 8 ] - 0.124 [3 .1 5]- I .126 [3.20] .100 [2 .5 4 ]‘
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-90l080
MTJ-88CX1-FSP-PG-LG-M20
S00005C
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PDF
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Untitled
Abstract: No abstract text available
Text: 13 12 10 PART NUMBER VERSION BAY 1/BAY 2 TOTAL DIM A SALES DRAWING 125.03 118.63 84.20 72.20 SD-170672-2294 5D-170672-2278 5D-170672-1200 5D-170672-1170 CIRCUITS 2.64 ±0.10 170672-2294 170672-2278 170672-1200 170672-1170 2 2 1 1 BAY BAY BAY BAY 122/172 146/132
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SD-170672-2294
5D-170672-2278
5D-170672-1200
5D-170672-1170
94-VO,
P5-75594-999
DR05CA
170CKTS
SD-170672-1170
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev D A TE :_ Description AWO# 7101 • APPROVED: Date 10/16/06 RELEASED Appr TITLE: .520 [13.21] ms IVM O O O .551 [14.00] .118 I .362 [9.20] I .0 0 ] T- .122 .050 [1.27] [3.10] .574 [14.60] -d - .030 [0.75] .250 [6.35] SPECIFICATIONS: Material: Insulator: Hi—Temp Nylon, glass reinforced, rated UL 94V —0
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MTJ-66HX1-T/R
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev DATE:_ Description A W 0# • APPROVED: Date 5/12/10 RELEASED Appr TITLE: KAPTON PICK PLACE TAPE "O o CD .091X.020 [2.30x0.50] .098X.079 [2 .5 0 x 2 .0 0 ] 3 54 [9 .0 0 ] RECOMMENDED PCB LAYOUT .031 [0 .8 0 ]' .272 [6 .9 0 ] I I .122 [3 .1 0 ] T~ -362
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DIODE T25 4 Jo
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO 44E D • ÖS3b35h 000514b 3 « S I E X SIEM EN S SFH 487P GaAIAs INFRARED EMITTER 1 -4 1 -1 3 Package Dimensions in Inches mm .122(3.1) .098 ÇL5) S u rf#« not Rat .028(0.7) .016(0.4) -L , .1C .10 (2.54) [M T .024(0.6) .016 (0.4)
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S3b35h
000514b
6E3b32b
000S147
DIODE T25 4 Jo
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PDF
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MO-229
Abstract: MO229
Text: R EV IS IO NS REV D E S C R 1P T I O N A RELEASE B CHG E X P O S E D APPLY JEDEC C ADD P IN TO E.C .N . DATE 122 05/30/2000 366 10/05/2001 TE/TL/SN 885 11/14/2002 TL/FL DO CU MENT C O NTR O L DAP L E N G T H : 2 . 0 WAS 1 . 8 ; R E G I S T R A T I O N TO NOTE 2
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MO-229,
MO-229
MO229
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PDF
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NB111
Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding
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bS0113G
NB121
100mA
400mV
to-92
fcj501130
NB021EV
NB211YY
NR001E
NB111
NB211E
LB 122 NPN
U6501
NB212E
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RPE121
Abstract: murata rpe131 capacitors RPE132 RPE131
Text: MONOLITHIC CERAMIC CAPACITORS CONFORMAL COATED LEADED - TEMPERATURE COMPENSATING TYPE— RPEP2H-U2J SERIES m uR a ta //m o rato ria Eiecùvnûs FEATURES • W id e capacitance, T.C., voltage and tolerance range ■ Industry standard sizes ■ Tape and reel available for
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UL94V-0
RPE132/122
RPE121
RPE131/132
60ppm
60ppm
C-22-C.
murata rpe131 capacitors
RPE132
RPE131
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