Untitled
Abstract: No abstract text available
Text: Toroidal TOROIDAL POWER L.V. RECTIFIER USE TRANSFORMERS • Low profile • Space saving and lightweight due to high efficiency toroidal design. • Low EMF radiation. • Dual primary 117/234 VAC, 50/60 Hz. • Dual secondaries for series or parallel connections
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UL506
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transformers 240v to 12v
Abstract: VA15-15 182J240 182U110 UL506 182L22 182Q117 182U30 888a 182T2
Text: Toroidal TOROIDAL POWER L.V. RECTIFIER USE TRANSFORMERS • Low profile • Space saving and lightweight due to high efficiency toroidal design. • Low EMF radiation. • Dual primary 117/234 VAC, 50/60 Hz. • Dual secondaries for series or parallel connections
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UL506
transformers 240v to 12v
VA15-15
182J240
182U110
UL506
182L22
182Q117
182U30
888a
182T2
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Untitled
Abstract: No abstract text available
Text: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides
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PD-96931
IRHNJ67134
IRHNJ67134
IRHNJ63134
90MeV/
MIL-STD-750,
MlL-STD-750,
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Untitled
Abstract: No abstract text available
Text: PD-96930 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96930
O-257AA)
IRHYS67134CM
IRHYS67134CM
IRHYS63134CM
90MeV/
5M-1994.
O-257AA.
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mev smd diode
Abstract: IRHNA67164 IRHNA63164 ir*7164
Text: PD-96959A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 TM International Rectifier’s R6 technology provides
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PD-96959A
IRHNA67164
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
mev smd diode
IRHNA63164
ir*7164
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mev smd diode
Abstract: No abstract text available
Text: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides
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PD-96959
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
mev smd diode
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IRHYB63134CM
Abstract: IRHYB67134CM
Text: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96997
O-257AA)
IRHYB67134CM
IRHYB67134CM
IRHYB63134CM
90MeV/
5M-1994.
O-257AA.
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IRHNJ67134
Abstract: IRHNJ63134
Text: PD-96931A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides
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PD-96931A
IRHNJ67134
IRHNJ67134
IRHNJ63134
90MeV/
MIL-STD-750,
MlL-STD-750,
IRHNJ63134
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Untitled
Abstract: No abstract text available
Text: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides
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PD-96959B
2N7581U2
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
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2N7581
Abstract: 2N768 2N758 2N7581u2
Text: PD-96959B 2N7581U2 IRHNA67164 150V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 TECHNOLOGY Product Summary Part Number IRHNA67164 Radiation Level 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 300K Rads (Si) 0.018Ω 56A* International Rectifier’s R6TM technology provides
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PD-96959B
IRHNA67164
IRHNA63164
2N7581U2
90MeV/
MIL-STD-750,
MlL-STD-750,
2N7581
2N768
2N758
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IRHMS63164
Abstract: IRHMS67164
Text: PD-96958 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS67164 100K Rads (Si) 0.019Ω 45A* IRHMS63164 300K Rads (Si) 0.019Ω 45A* International Rectifier’s R6TM technology provides
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PD-96958
O-254AA)
IRHMS67164
IRHMS67164
IRHMS63164
90MeV/
O-254AA.
MIL-PRF-19500
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IRHYS63134CM
Abstract: IRHYS67134CM
Text: PD-96930A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYS63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides
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PD-96930A
O-257AA)
IRHYS67134CM
IRHYS67134CM
IRHYS63134CM
90MeV/
5M-1994.
O-257AA.
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2N7582
Abstract: 2N7582T1 IRHMS67164
Text: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
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PD-96958A
O-254AA)
IRHMS67164
IRHMS63164
2N7582T1
90MeV/
O-254AA.
MIL-PRF-19500
2N7582
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Untitled
Abstract: No abstract text available
Text: PD-96997A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67134CM 100K Rads (Si) RDS(on) I D 0.090Ω 19A IRHYB63134CM 300K Rads (Si) 0.090Ω 19A International Rectifier’s R6 TM technology provides
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PD-96997A
O-257AA)
IRHYB67134CM
IRHYB63134CM
90MeV/
5M-1994.
O-257AA.
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|
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Untitled
Abstract: No abstract text available
Text: PD-96958A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7582T1 IRHMS67164 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67164 100K Rads (Si) RDS(on) 0.019Ω ID 45A* IRHMS63164 0.019Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
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PD-96958A
O-254AA)
2N7582T1
IRHMS67164
IRHMS67164
IRHMS63164
90MeV/
O-254AA.
MIL-PRF-19500
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MEPCO electra
Abstract: 319DA541T250AMA1 P4855-1 3120EA651T200BHA1 surge lightning to smps MEPCO 12v dc 240v dc step up mepco capacitor triac noise suppressor MEPCO electra thermistor
Text: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & Intelligent Motion, June, 1986 Abstract The power line transient environment is described. Transient voltages on the DC output of off-line rectifier/filter designs are shown. Protection schemes
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IRF5Y6215CM
Abstract: No abstract text available
Text: PD - 94165 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-257AA)
IRF5Y6215CM
-150V
-150V,
O-257AA
IRF5Y6215CM
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
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IRF5NJ6215
Abstract: 75vds p mosfet
Text: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ6215
-150V
-150V,
IRF5NJ6215
75vds p mosfet
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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Untitled
Abstract: No abstract text available
Text: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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PD-94165A
O-257AA)
IRF5Y6215CM
-150V
5M-1994.
O-257AA.
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mepco capacitor
Abstract: 6 volts SMPS Power supply surge lightning to smps
Text: HARDENING POWER SUPPLIES TO LINE VOLTAGE TRANSIENTS Originally presented at the Power Electronics Design Conference, October, 1985, Anaheim, California Also published in Power Conversion & intelligent Motion, June, 1986 Abstract The pow er line transi&nt environment is described. Transient voltages on the D C output of off-line rectifier/fitter designs are shown. Protection schemes
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: Isolation & Auto Transformers_ SPLIT BOBBIN ISOLATION TRANSFORMERS 3 VA to 1.25 KVA 5 0 /6 0 Hz 230V/230V or 115V/115V or 230V/115V or 115V/230V 1.5 KV RMS Hipot - UL Class B (130°C) (Mtg. Style: C) (STD. SIZE l-VIII) ISO LA TIO N T R A N S FO R M E R
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30V/230V
15V/115V
30V/115V
15V/230V
115/230V,
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