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    120NS Search Results

    120NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27C256-120DC Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120DIB Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    AM27C256-120DI Rochester Electronics LLC UVPROM, 32KX8, 120ns, CMOS, CDIP28, DIP-28 Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    X28C512EM-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    120NS Price and Stock

    Jensen Global JG120NS

    IT SERIES DISPENSING TIPS W/ AIR
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    DigiKey JG120NS Box 1
    • 1 $71.02
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    Techni-Tool, Inc. JG120NS 2
    • 1 $58.6
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    TestEquity LLC JG120NS 2
    • 1 $58.6
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    BEI Sensors 9901120NS

    HALL EFFECT ROTARY SENSOR
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    IDEC Corporation ABD120N-S

    PUSHBUTTON 30MM
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    IDEC Corporation AOD120N-S

    PUSHBUTTON 30MM
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    BEI Sensors 9902120NS

    HALL EFFECT ROTARY SENSOR
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    Find more 120NS price and stock on Findchips.com

    120NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XM28C010P

    Abstract: No abstract text available
    Text: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times


    Original     		PDF XM28C010P --150ns, 120ns, Size--64 XM28C010P

    M27V201

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V


    Original     		PDF M27V201 256Kb 120ns FDIP32W PDIP32 M27V201 PDIP32 PLCC32 TSOP32

    MAX4189

    Abstract: MAX4189ESD MAX4190 TAJB106M010 MAX4188 RG3390
    Text: 19-1369; Rev 0; 7/98 MAX4188 Evaluation Kit _Features ♦ Fast Enable/Disable Times 120ns/35ns _Component List _Ordering Information DESIGNATION QTY DESCRIPTION C1, C4 2 10µF, 10V, 20% tantalum capacitors


    Original     		PDF MAX4188 120ns/35ns) TAJB106M010 293D106X0010B 70MHz MAX4188EVKIT 130MHz MAX4188/MAX4189 MAX4189 MAX4189ESD MAX4190 RG3390

    29F800T

    Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
    Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption


    Original     		PDF MX29F800T/B 1Mx8/512Kx16] 70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/08/2000 DEC/04/2000 FEB/12/2001 29F800T 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


    Original     		PDF K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF


    Original     		PDF 1000E-D 16M-Bit /1Mx16) 100ns 120ns 100pF 1000E-DC 42-DIP-600

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF 4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E

    555H

    Abstract: MX29F200B MX29F200T
    Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz


    Original     		PDF MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T

    29F080

    Abstract: 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14
    Text: PRELIMINARY MX29F080 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • 1,048,576 x 8 byte mode only stuction Single power supply operation - 5.0V only operation for read, erase and program operation Fast access time: 70/90/120ns


    Original     		PDF MX29F080 1024K 70/90/120ns 64K-Byte AUG/10/2000 JUN/18/2001 PM0579 JAN/16/2002 29F080 29f080-90 MX29F080 SA10 SA11 SA12 SA13 SA14

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000E-TC 16M-Bit /1Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF


    Original     		PDF 1000B-TC 64M-Bit /4Mx16) 100ns 120ns 100pF 44-TSOP2-400

    Untitled

    Abstract: No abstract text available
    Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)


    Original     		PDF WSF128K16-XXX 128Kx16 WSF128K16-H1X WSF128K16-XG1UX1 120ns 66-pin, ICCx32

    Untitled

    Abstract: No abstract text available
    Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture


    Original     		PDF WSF512K16-XXX 512KX16 120ns ICCx16

    Untitled

    Abstract: No abstract text available
    Text: UM23C24100 1,572,864 X 16/3,145,728 X 8 BIT CMOS MASK ROM P R E L IM IN A R Y Features • 1,572,864 x 16/3,145,728 x 8-bit organization * Single +5V power supply * Access time: 120ns max. ■ Current: Operating: 60mA (max.) Standby: 50 <;A (max.) ■ Three-state outputs for wired-OR expansion


    OCR Scan     		PDF UM23C24100 120ns 42-pin 44-pin UM23C24100 100pF 015/A-1

    as3145

    Abstract: No abstract text available
    Text: UM23C24002 3,145,728 X 8 BIT CMOS MASK ROM PRELIM INARY Features • ■ ■ ■ ■ ■ ■ TTL-compatible inputs and outputs 3,145,728 x 8-bit organization Single +5V power supply Access time: 120ns max. Current: Operating: 60mA (max.) Three-state outputs for w ired-OR expansion


    OCR Scan     		PDF UM23C24002 120ns 36-pin UM23C24002 100pF as3145

    Untitled

    Abstract: No abstract text available
    Text: 2SK2044 AP A d v a n c e d P e rfo rm a n c e Series _ Vdss“ 600V N Channel Power M OSFET £4286 F e a tu r e s • Low ON resistance. ■Very high-speed sw itching. • H igh-speed diode (trr= 120ns). ■M icaless package facilitatin g mounting.


    OCR Scan     		PDF 2SK2044 120ns) O-220FI 51193TH X-9260

    3A73

    Abstract: No abstract text available
    Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at


    OCR Scan     		PDF TC531024P/F 120ns 150ns, 600mil 40pin 525mil 3A73

    Untitled

    Abstract: No abstract text available
    Text: IDT7130SA/LA 1DT7140SA/LA CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-speed access — Military: 25/30/35/45/55/70/90/100/120ns (max.) —Commercial: 20/25/30/35/45/55/70/90/100ns (max.) • Low-power operation


    OCR Scan     		PDF IDT7130SA/LA 1DT7140SA/LA 25/30/35/45/55/70/90/100/120ns 20/25/30/35/45/55/70/90/100ns IDT7130/IDT7140SA 325mW IDT7130/IDT7140LA IDT7130 16-or-more-bits

    32-TSOP2-400F

    Abstract: altl
    Text: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version


    OCR Scan     		PDF KM68V4000AL/AL-L 120ns 18mW/1MHz KM68V4000ALG/ALG-L 32-SOP-525 KM68V4000ALT/ALT-L 32-TSOP2-400F KM68V4000ALR/ALR-L 32-TSOP2-4COR KM68V4000AL/AL-L altl

    Untitled

    Abstract: No abstract text available
    Text: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current


    OCR Scan     		PDF 27C128 27C128 120ns 120ns. 11003H

    Untitled

    Abstract: No abstract text available
    Text: MICROELECTRONICS XL28C64B E x txH o n ctin? 8K X 8 CMOS Electrically Erasable PROM 5ms Nonvolatile Write Cycle PIN C O N F IG U R A TIO N S F E A TU R ES • Fast Read A ccess T im es — 120ns, 150ns, 200ns and 250ns ■ Low C M O S P o w er C onsum ption


    OCR Scan     		PDF XL28C64B 150pA 120ns, 150ns, 200ns 250ns 120ns 100pF

    Untitled

    Abstract: No abstract text available
    Text: ELMO SEMIC OND UCTOR CORP M3E D • BSTQSbM QQDDÜS1 0 * E S C C PRELIMINARY T-Hb-\3-»'7 8 M egabit FLASH MEMORY Features: ♦ 1Mb x 8 Organization ♦ Access Time of 120ns ♦ Low Power Operation: Standby: 1mA Max. Operating: 50mA Max. ♦ 10,000 Erase/Program Cycles


    OCR Scan     		PDF 120ns 16sec. EM1024K8-M05 1024K

    Untitled

    Abstract: No abstract text available
    Text: '7 005120 F eatures 4 « n v-t'cA. Paged. C onfigurations w ith Page Reset on Pozuet—Up AT27C512 - Not Paged, 64K x B AT27C51S - 4 Pages. 16K x fl AT27CS1S - 2 Pages. S2K x 8 Low Power CMOS Operation 40mA max. Active a t SMHx 100y,A max. Stan dby F ast Read Access Time — 120ns


    OCR Scan     		PDF AT27C512 AT27C51S AT27CS1S 120ns 200mA 1FN41

    Untitled

    Abstract: No abstract text available
    Text: T T WPF29640-120GVI WHITE /MICROELECTRONICS 64M BYTE 4x4Mx32 FLASH (5VSupply;5V Program) SIMM MODULE A D VA N C ED * FEATURES • A ccess Tim e of 120ns ■ 10,000 E rase/Program Cycles Packaging: • B lock Erase/Program Lockout du ring Pow er T ra n sitio n s


    OCR Scan     		PDF WPF29640-120GVI 4x4Mx32) 120ns 28F320J5