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    120N0 Search Results

    120N0 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NP120N04NUK-S18-AY Renesas Electronics Corporation 40 V – 120 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
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    120N0 Price and Stock

    Infineon Technologies AG IAUC120N06S5L032ATMA1

    MOSFET N-CH 60V 120A TDSON-8-34
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    DigiKey IAUC120N06S5L032ATMA1 Reel 25,000 5,000
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    IAUC120N06S5L032ATMA1 Cut Tape 1,306 1
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    Newark IAUC120N06S5L032ATMA1 Cut Tape 20,942 5
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    EBV Elektronik IAUC120N06S5L032ATMA1 19 Weeks 5,000
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    Rochester Electronics LLC IPP120N06S402AKSA1

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey IPP120N06S402AKSA1 Tube 22,700 306
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    Infineon Technologies AG IAUC120N04S6L012ATMA1

    IAUC120N04S6L012ATMA1
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    DigiKey IAUC120N04S6L012ATMA1 Reel 20,000 5,000
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    IAUC120N04S6L012ATMA1 Cut Tape 8,112 1
    • 1 $2.35
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    Mouser Electronics IAUC120N04S6L012ATMA1 4,601
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    Newark IAUC120N04S6L012ATMA1 Cut Tape 18,552 1
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    Rochester Electronics IAUC120N04S6L012ATMA1 3,157 1
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    Chip1Stop IAUC120N04S6L012ATMA1 Cut Tape 5,000
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    Taiwan Semiconductor TSM120N06LCS RLG

    MOSFET N-CHANNEL 60V 23A 8SOP
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    DigiKey TSM120N06LCS RLG Reel 12,500 2,500
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    TSM120N06LCS RLG Cut Tape 1,255 1
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    Avnet Americas TSM120N06LCS RLG Reel 5,000
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    Avnet Asia TSM120N06LCS RLG 16 Weeks 5,000
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    EBV Elektronik TSM120N06LCS RLG 18 Weeks 2,500
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    Infineon Technologies AG IAUC120N04S6L008ATMA1

    MOSFET N-CH 40V 120A 8TDSON-33
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    DigiKey IAUC120N04S6L008ATMA1 Reel 5,000 5,000
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    IAUC120N04S6L008ATMA1 Cut Tape 4,735 1
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    Mouser Electronics IAUC120N04S6L008ATMA1 8,156
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    RS IAUC120N04S6L008ATMA1 Bulk 5 2 Weeks 1
    • 1 $1.81
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    Chip 1 Exchange IAUC120N04S6L008ATMA1 19,584
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    Chip1Stop IAUC120N04S6L008ATMA1 Cut Tape 4,990
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    IAUC120N04S6L008ATMA1 2,217
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    EBV Elektronik IAUC120N04S6L008ATMA1 19 Weeks 5,000
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    Find more 120N0 price and stock on Findchips.com

    120N0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		PDF IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original     		PDF IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94

    Mosfet 120n03ls

    Abstract: 120n03ls
    Text: 120N03LS G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 12.0 ID 39 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSC120N03LS 120N03LS Mosfet 120n03ls 120n03ls

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    120N03MS

    Abstract: bsc120n03ms JESD22
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		PDF BSC120N03MS 120N03MS 120N03MS JESD22

    Untitled

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS 30 V VGS=10 V 12 mW VGS=4.5 V 14 ID • 100% Avalanche tested 39 A PG-TDSON-8


    Original     		PDF BSC120N03MS IEC61249-2-21 120N03MS

    120N03MS

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		PDF BSC120N03MS 120N03MS 120N03MS

    120N06N

    Abstract: 120N06
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		PDF IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06

    120N03MS

    Abstract: BSC120N03MS IEC61249-2-21 JESD22 MS-100101 m9060
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • 100% Avalanche tested


    Original     		PDF BSC120N03MS IEC61249-2-21 120N03MS 120N03MS IEC61249-2-21 JESD22 MS-100101 m9060

    120N06N

    Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original     		PDF IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original     		PDF BSC120N03MS 120N03MS

    120N06N

    Abstract: 75F75 IPP120N06N 120n06 PG-TO220-3
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - normal level 60 11.7 SMDversion ID 75 V m: A • 175 °C operating temperature


    Original     		PDF IPB120N06N IPP120N06N PG-TO220-3 PG-TO263-3 120N06N page10 120N06N 75F75 120n06 PG-TO220-3

    120n03ls

    Abstract: 120n03 Mosfet 120n03ls
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS on ,max 12 mW ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		PDF BSC120N03LS IEC61249-2-21 120N03LS 120n03ls 120n03 Mosfet 120n03ls

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS JESD22 BSC120N03LS G
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original     		PDF BSC120N03LS 120N03LS Mosfet 120n03ls 120N03LS 120n03 JESD22 BSC120N03LS G

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS IEC61249-2-21 JESD22 PG-TDSON-8
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 12 mΩ • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original     		PDF BSC120N03LS IEC61249-2-21 120N03LS Mosfet 120n03ls 120N03LS 120n03 IEC61249-2-21 JESD22 PG-TDSON-8

    30ct0045

    Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
    Text: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to


    OCR Scan     		PDF 200mV. 30ct0045 SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m