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    120N0 Search Results

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    NP120N04NUK-S18-AY Renesas Electronics Corporation 40 V – 120 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
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    120N0 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC120N03LSGATMA1

    MOSFET N-CH 30V 12A/39A TDSON
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    DigiKey BSC120N03LSGATMA1 Cut Tape 17,381 1
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    BSC120N03LSGATMA1 Digi-Reel 17,381 1
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    Rochester Electronics BSC120N03LSGATMA1 55,000 1
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    TME BSC120N03LSGATMA1 1
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    Chip-Germany GmbH BSC120N03LSGATMA1 10,000
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    EBV Elektronik BSC120N03LSGATMA1 35,000 15 Weeks 5,000
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    New Advantage Corporation BSC120N03LSGATMA1 30,000 1
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    Vyrian BSC120N03LSGATMA1 11,462
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    Infineon Technologies AG IAUC120N04S6N013ATMA1

    IAUC120N04S6N013ATMA1
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    DigiKey IAUC120N04S6N013ATMA1 Cut Tape 12,236 1
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    IAUC120N04S6N013ATMA1 Digi-Reel 12,236 1
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    Newark IAUC120N04S6N013ATMA1 Cut Tape 4,697 1
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    Rochester Electronics IAUC120N04S6N013ATMA1 95,842 1
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    Chip One Stop IAUC120N04S6N013ATMA1 Cut Tape 4,930 0 Weeks, 1 Days 1
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    EBV Elektronik IAUC120N04S6N013ATMA1 19 Weeks 5,000
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    Vyrian IAUC120N04S6N013ATMA1 15,563
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    Infineon Technologies AG IAUC120N06S5N032ATMA1

    MOSFET_)40V 60V)
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    DigiKey IAUC120N06S5N032ATMA1 Cut Tape 9,800 1
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    IAUC120N06S5N032ATMA1 Digi-Reel 9,800 1
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    IAUC120N06S5N032ATMA1 Reel 5,000 5,000
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    Avnet Americas IAUC120N06S5N032ATMA1 Reel 18 Weeks 5,000
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    Newark IAUC120N06S5N032ATMA1 Cut Tape 4,723 1
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    Rochester Electronics IAUC120N06S5N032ATMA1 35,907 1
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    EBV Elektronik IAUC120N06S5N032ATMA1 19 Weeks 5,000
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    Infineon Technologies AG IPB120N04S401ATMA1

    MOSFET N-CH 40V 120A D2PAK
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    DigiKey IPB120N04S401ATMA1 Digi-Reel 1,813 1
    • 1 $3.49
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    IPB120N04S401ATMA1 Cut Tape 1,813 1
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    IPB120N04S401ATMA1 Reel 1,000 1,000
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    Avnet Americas IPB120N04S401ATMA1 Reel 12 Weeks 1,000
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    Bristol Electronics IPB120N04S401ATMA1 154
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    Rochester Electronics IPB120N04S401ATMA1 64 1
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    EBV Elektronik IPB120N04S401ATMA1 13 Weeks 1,000
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    Vyrian IPB120N04S401ATMA1 3,361
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    Infineon Technologies AG IPB120N08S404ATMA1

    MOSFET N-CH 80V 120A D2PAK
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    DigiKey IPB120N08S404ATMA1 Digi-Reel 993 1
    • 1 $4.88
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    • 100 $2.3006
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    IPB120N08S404ATMA1 Cut Tape 993 1
    • 1 $4.73
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    Rochester Electronics IPB120N08S404ATMA1 32,133 1
    • 1 $1.97
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    EBV Elektronik IPB120N08S404ATMA1 143 Weeks 1,000
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    120N0 Datasheets Context Search

    Catalog Datasheet
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    120N06N

    Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original
    IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng PDF

    IPB120N06N

    Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature


    Original
    IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 PDF

    Mosfet 120n03ls

    Abstract: 120n03ls
    Text: 120N03LS G OptiMOS 3 Power-Transistor Product Summary Features V DS • Fast switching MOSFET for SMPS 30 R DS on ,max • Optimized technology for DC/DC converters 12.0 ID 39 V mΩ A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    BSC120N03LS 120N03LS Mosfet 120n03ls 120n03ls PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original
    B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter PDF

    120N03MS

    Abstract: bsc120n03ms JESD22
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original
    BSC120N03MS 120N03MS 120N03MS JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS 30 V VGS=10 V 12 mW VGS=4.5 V 14 ID • 100% Avalanche tested 39 A PG-TDSON-8


    Original
    BSC120N03MS IEC61249-2-21 120N03MS PDF

    120N03MS

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original
    BSC120N03MS 120N03MS 120N03MS PDF

    120N06N

    Abstract: 120N06
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original
    IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06 PDF

    120N03MS

    Abstract: BSC120N03MS IEC61249-2-21 JESD22 MS-100101 m9060
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • 100% Avalanche tested


    Original
    BSC120N03MS IEC61249-2-21 120N03MS 120N03MS IEC61249-2-21 JESD22 MS-100101 m9060 PDF

    120N06N

    Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature


    Original
    IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G PDF

    30ct0045

    Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
    Text: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to


    OCR Scan
    200mV. 30ct0045 SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 12 mΩ V GS=4.5 V 14 ID • N-channel


    Original
    BSC120N03MS 120N03MS PDF

    120N06N

    Abstract: 75F75 IPP120N06N 120n06 PG-TO220-3
    Text: 120N06N G OptiMOS Power-Transistor 120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - normal level 60 11.7 SMDversion ID 75 V m: A • 175 °C operating temperature


    Original
    IPB120N06N IPP120N06N PG-TO220-3 PG-TO263-3 120N06N page10 120N06N 75F75 120n06 PG-TO220-3 PDF

    120n03ls

    Abstract: Mosfet 120n03ls BSC120N03LS JESD22 BSC120N03LS G
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    BSC120N03LS 120N03LS 120n03ls Mosfet 120n03ls JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS JESD22 BSC120N03LS G
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 12 mΩ ID 39 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    BSC120N03LS 120N03LS Mosfet 120n03ls 120N03LS 120n03 JESD22 BSC120N03LS G PDF

    Mosfet 120n03ls

    Abstract: 120N03LS 120n03 BSC120N03LS IEC61249-2-21 JESD22 PG-TDSON-8
    Text: 120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 12 mΩ • Optimized technology for DC/DC converters ID 39 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original
    BSC120N03LS IEC61249-2-21 120N03LS Mosfet 120n03ls 120N03LS 120n03 IEC61249-2-21 JESD22 PG-TDSON-8 PDF