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    1206 CAPACITOR CHIP PADS LAYOUT Search Results

    1206 CAPACITOR CHIP PADS LAYOUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    1206 CAPACITOR CHIP PADS LAYOUT Datasheets Context Search

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    1206 pads layout

    Abstract: No abstract text available
    Text: TECHNICAL INFORMATION SOLDER PAD GEOMETRY STUDIES FOR SURFACE MOUNT OF CHIP CAPACITORS* Kent Wicker & John Maxwell AVX Corporation Corporate Research Laboratory P.O. Box 867 Myrtle Beach, SC 29577 Abstract: Solder pad geometry for surface mounting chip capacitors were


    Original     		PDF S-PGSM00M301-R 1206 pads layout

    1206 pads layout

    Abstract: 1812 pads layout IPC-SM-782
    Text: TECHNICAL INFORMATION SOLDER PAD GEOMETRY STUDIES FOR SURFACE MOUNT OF CHIP CAPACITORS* Kent Wicker & John Maxwell AVX Corporation Corporate Research Laboratory P.O. Box 867 Myrtle Beach, SC 29577 Abstract: Solder pad geometry for surface mounting chip capacitors were


    Original     		PDF S-PGSM00M301-R 1206 pads layout 1812 pads layout IPC-SM-782

    walsin ceramic capacitor

    Abstract: walsin 0603 capacitor ceramic capacitor footprint 0201 dimension ceramic capacitor footprint dimension WALSIN capacitor ac walsin capacitor walsin ceramic capacitor 1206 MLCC CRACK mlcc soldering footprint dimension of MLCC capacitor 1812
    Text: MULTILAYER CERAMIC CAPACITORS MLCC Application guide MLCC APPLICATION GUIDE WALSIN TECHNOLOGY CORPORATION 566-1,Kao-Shi Road, 5 Lin, Yang-Mei, Tao-Yuan, Taiwan www.passivecomponent.com Mar. 09, 2010 1/10 MULTILAYER CERAMIC CAPACITORS MLCC Application guide


    Original     		PDF

    RO3010

    Abstract: j352 transistor j352 bc17a VJ2225Y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A RO3010 j352 transistor j352 bc17a VJ2225Y

    MRF374A

    Abstract: marking c14a l1a marking
    Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A marking c14a l1a marking

    RO3010

    Abstract: RF POWER VERTICAL MOSFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374 MRF374A RO3010 RF POWER VERTICAL MOSFET

    Kemet Flex Solutions

    Abstract: f2105 IPC-782A 198D IPC-SM-782 EIA-198 method 103 F-2100E F211
    Text: Surface Mount Mounting Pad Dimensions and Considerations Ceramic Capacitors including 0603, 0402, 0201 and ceramic arrays Tantalum Capacitors (including low profile and large case (X & E) sizes and R case sizes) Aluminum Capacitors (including D, V, & X case sizes)


    Original     		PDF F-2100E IPC-SM-782, Kemet Flex Solutions f2105 IPC-782A 198D IPC-SM-782 EIA-198 method 103 F211

    thermistor r5t

    Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
    Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373S MRF373 31JUL04 31JAN05 thermistor r5t chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010

    J352

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A MRF374A/D J352

    transistor L1A

    Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A MRF374A/D transistor L1A 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB

    transistor j352

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A transistor j352

    RO3010

    Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
    Text: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A RO3010 motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B

    balun 50 kW

    Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A/D MRF374A balun 50 kW C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors

    marking c14a

    Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
    Text: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF374A MRF374A marking c14a ATC - Semiconductor Devices transistor j239 04 6274 045 000 800

    SMD Transistor z6

    Abstract: SMD z6 1206 pads layout ADuM540x ceramic chip capacitor pads layout ADUM5401 transistor SMD Z2 terminal block connector
    Text: Evaluation Board for the ADuM5401ADuM5404 Quad Isolators with isoPower EVAL-ADuM5401-ADuM5404 products and is a configurable board that can be adapted to many iCoupler products. FEATURES Convenient connections for power through screw terminal blocks Add-on BNC connector for 50 Ω signal sources


    Original     		PDF ADuM5401ADuM5404 EVAL-ADuM5401-ADuM5404 ADuM130x ADuM131x ADuM140x ADuM141x ADuM240x ADuM330x ADuM340x ADuM540x SMD Transistor z6 SMD z6 1206 pads layout ceramic chip capacitor pads layout ADUM5401 transistor SMD Z2 terminal block connector

    MRF373 PUSH PULL

    Abstract: c19a chip resistor 1206 rogers C14A MRF373 MRF373 print circuit B07T MRF373S R7B Connector
    Text: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		PDF MRF373/D MRF373 MRF373S MRF373 MRF373 PUSH PULL c19a chip resistor 1206 rogers C14A MRF373 print circuit B07T MRF373S R7B Connector

    RO3010

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 RO3010

    C3B Kemet

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 MRF372R5 C3B Kemet

    transistor R1A 37

    Abstract: 5233 mosfet J146 VJ1210y
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF372 transistor R1A 37 5233 mosfet J146 VJ1210y

    transmitter 446 mhz

    Abstract: R5B transistor J960 470-860 mhz Power amplifier w
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		PDF MRF372 transmitter 446 mhz R5B transistor J960 470-860 mhz Power amplifier w

    MRF373R1

    Abstract: C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373/D MRF373R1 MRF373SR1 MRF373R1 C19B C14A rf push pull mosfet power amplifier B07T MRF373SR1 chip resistor 1206 ATC 700 B 101 G P

    c19a

    Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
    Text: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.


    Original     		PDF MRF373R1 MRF373SR1 MRF373R1 MRF373/D c19a motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373SR1

    MRF373

    Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
    Text: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		PDF MRF373 MRF373S MRF373) MRF373 DEVICEMRF373/D RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13

    KSS 1206

    Abstract: chip resistor 1206 MRF373 MRF373 print circuit GPS 112 C14A GX-0300-55 MRF373S Thermistor application
    Text: MOTOROLA O rder this docum ent by M RF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recomm ended for New Design. The next generation of higher performance products are in developm ent. Visit our online Selector Guides http://m ot-sps.com /rf/sg/sg.htm l for scheduled introduction dates.


    OCR Scan     		PDF MRF373/D mrf373/d KSS 1206 chip resistor 1206 MRF373 MRF373 print circuit GPS 112 C14A GX-0300-55 MRF373S Thermistor application