MMBD1201
Abstract: MMBD1202 MMBD1203 MMBD1204 MMBD1205
Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC
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MMBD1201
OT-23
MMBD1202
MMBD1203
MMBD1204
MMBD1205
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Untitled
Abstract: No abstract text available
Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC
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Original
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MMBD1201
OT-23
MMBD1202
MMBD1203
MMBD1204
MMBD1205
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Untitled
Abstract: No abstract text available
Text: ykiyjxivki 19-1202; Rev 0 :4 /9 7 Low-Voltage, Single-Supply D u a l SPST/ SPDT A n a l o g S w i t c h e s Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ The M A X 4541-M A X 4544 are p re cisio n , dual analog sw itches designed to operate from a single +2.7V to + 12V su pp ly. Low pow er consum ption 5^W makes
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4541-M
100pA
150ns
100ns
MAX4544
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Untitled
Abstract: No abstract text available
Text: Series 50-170 A m p * DIODE* 9CRDIODE Modules High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms
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E72445)
EFD02CF
D-66687
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E72445
Abstract: EFD02CF
Text: Series EF 50-170 A m p * DIODE« 9CRÜIODE M odules • High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms
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E72445)
EFD02CF
D-66687
E72445
EFD02CF
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on line ups circuit schematic diagram
Abstract: three phase on line ups circuit diagrams B48-2 B48-2T B483C-2T E72445
Text: Series B48-2T, B48-2 35-50 A m p * DIODE Modules • Single and Three Phaæ Circuits • Up to 1600 Volt Blocking Standard c a v a dm Sngle- and three-phase diode circuits come in a panel mount package that provides 2500 Vrms isolation from the terminals to the ceramic base. Available in
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B48-2T,
B48-2
E72445)
B483C-2T
120Vac)
240Vac)
380Vac)
480Vac)
530Vac)
600Vac)
on line ups circuit schematic diagram
three phase on line ups circuit diagrams
B48-2
B48-2T
B483C-2T
E72445
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Untitled
Abstract: No abstract text available
Text: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard C3YJDM Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge
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E72445)
D-66687
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Condor
Abstract: M50D E72445 M50100TB1200
Text: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard c a v a dm Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge
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E72445)
M50100TB1200
D-66687
Condor
M50D
E72445
M50100TB1200
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Diode BFE 16 e
Abstract: AC480V
Text: Series M 50 Diode 60-100 Amp • DIODE Modules S iig fe - High Surge Current Rectifier Circuits Up to 1600 Volt Blocking Standard and thiee-phase diode cinuits incorporate highly e fficie n t th em a l m anagem e n t ta provide high surge capability, extended life, and lelab fe
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D-66687
Diode BFE 16 e
AC480V
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Z6 ZENER DIODE
Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
Text: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :
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2-1Z390
A-1Z30A
2-1Z390,
DO-15
SC-39
Z6 ZENER DIODE
Z6 DIODE
LZ13A
21Z3
zener diode IN 825
1Z18A
zener diode si 18
LZ6.8
z390
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tt1250
Abstract: No abstract text available
Text: Series M 50 SOR/ Diode 50-100 Amp • SCR/DIODE M odules Over 40KW Output Capability CRYZX3M Control over power The M 50 S e r e s m od u fes utilize highly e f f c e n t th e m a im anagem e n t o f pro vide high su ig e capability, i>ng lifetm e and le la b fe perfbm a n c e . A vaihbfe ±1
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E72445)
D-66687
tt1250
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Diode BFE
Abstract: No abstract text available
Text: Series B-2T, B-2 25-42.5 Amp • SCR/DIODE Modules B ght Standard Grcuits For AC or DC Variable Voltage O utput Up To 15KW Control over power PART NUMBER IDENTIFICATION S e rie s T y p e B-Case style C eram ic Base C u rre n t 5 - 2 5 A m ps 6 - 42.5 A m ps
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E72445)
D-66687
Diode BFE
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BFE 75A
Abstract: No abstract text available
Text: Series FI 8 25-90 Amp • SCR/DIODE Modules M o d u fes com e ±1 an ild u stiy stan dard p a c k a g e , o ffe r n g n iie c i n u i s t h a t can b e u æ d s n g ÿ o r a s pow e r c o n tro l b u iü r ig block s. A l m o d e i featu ie h ig h ÿ e f f c e n t th em a l m anagem e n t
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F18-Case
D-66687
BFE 75A
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diode c48
Abstract: 10DL2C 10DL2C48A 10FL2C48A U10DL2C48A U10FL2C48A 10FL2
Text: TOSHIBA 10DL2C48A, 10FL2C48A#U 10DL2C48A#U 10FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. • • • • Repetitive Peak Reverse Voltage : V rrm = 200, 300V
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10DL2C48A
10FL2
U10DL2C48A
10FL2C48A
10DL2C48A,
10FL2C48A,
U10DL2C48A,
U10FL2C48A
diode c48
10DL2C
10FL2C48A
U10FL2C48A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOLD9441 MD TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 0 3 V/ LD ^ (5Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
646nm
500MHz)
10kHz,
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laser diode toshiba
Abstract: 2 Wavelength Laser Diode 650nm 50mw 12 pin laser
Text: TOLD9441 MC TOSHIBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
15-4A1
646nm
651nm
656nm
10kHz,
500MHz)
laser diode toshiba
2 Wavelength Laser Diode
650nm 50mw
12 pin laser
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DAiode
Abstract: 650nm 50mw
Text: TO SHIBA TOLD9441 M C TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 LD 0 3 V/ 0Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
646nm
OLD9441MC
500MHz)
10kHz,
DAiode
650nm 50mw
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DAiode
Abstract: PIN Photodiode side look
Text: TO SHIBA TOLD9231M TO SHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE
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OLD9231M
670nm
DAiode
PIN Photodiode side look
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 20DL2C41 A,20FL2C41 A,20GL2C41 A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C41A, 20FL2C41A, 20GL2C41A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Si r i \ 3.3 M A X. / / c p
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20DL2C41
20FL2C41
20GL2C41
20DL2C41A,
20FL2C41A,
20GL2C41A
20GL2C41A)
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOLD9441 M C TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power :P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 1. LASER DIODE ANODE O¿ j, uT An uCi T^ ?iÜv TYITfcTVI?
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OLD9441
650nm
500MHz)
10kHz,
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Untitled
Abstract: No abstract text available
Text: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE
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OLD9221M
670nm
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Untitled
Abstract: No abstract text available
Text: Series B48-2T, B48-2 35-50 A m p * DIODE Modules • Single and Three Phase Circuits Sngle- and three-phase diode circuits come in a panel mount package that provides 2500 Vrms isolation from the terminalsto the ceramic base. Availablein ratings up to 1600 Volts, all models are
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OCR Scan
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B48-2T,
B48-2
E72445)
120Vac)
240Vac)
380Vac)
480Vac)
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PDF
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Untitled
Abstract: No abstract text available
Text: Series EF 50-170 Amp • DIODE* SCR/DIODE M odules High Therm al Efficiency These c i m i s pmvide com pfete pow er control ±1 a shgfe package, ntiferig high them a l effcency to assuie Jong life and lelabfe perfbm. anoe. Twe t e standaid models pmviie 2500 Vim s
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E72445)
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 1 Z C 1 2 A -1 Z C 1 2 0 A TO SHIBA ZENER DIODE SILICON DIFFUSE TYPE 1ZC12A-1ZC120A Unit in mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES • • • • m Average Power Dissipation : P = 1.0W Zener Voltage : Vz = 12—120 V Tolerance of Zener Voltage Vg : ±5%
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1ZC12A-1ZC120A
1ZC120A)
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