SIDC06D120E
Abstract: No abstract text available
Text: Preliminary SIDC06D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D120E 1200V ICn 5A A This chip is used for:
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SIDC06D120E
Q67050-A4008A001
4342E,
SIDC06D120E
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GD5NB120SZ
Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
Text: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE
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STGD5NB120SZ-1
STGD5NB120SZ
GD5NB120SZ
STGD5NB120SZT4
SCHEMATIC igbt dimmer
STGD5NB120SZ
gd5n
dimmer diagrams IGBT
STGD5NB120SZ-1
marking c2 diode
gd5nb
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PDF
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sttab12d
Abstract: dimmer diagrams IGBT STGD5NB120SZ-1 STGD5NB120SZ
Text: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V INTERNALLY CLAMPED PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 1.8 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY
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STGD5NB120SZ-1
sttab12d
dimmer diagrams IGBT
STGD5NB120SZ-1
STGD5NB120SZ
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qm5hg-24
Abstract: TRANSISTOR 545 QM5hg
Text: MITSUBISHI TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 • • • • IC Collector current . 5A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 5
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QM5HG-24
400mA
qm5hg-24
TRANSISTOR 545
QM5hg
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Untitled
Abstract: No abstract text available
Text: CSD05120 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=5A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD05120
CSD05120,
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diode Vr 1200v
Abstract: "Power Diode" 1200V 5A DIODE ERW08-120 1200V fast
Text: ERW08-120 5A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current
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ERW08-120
A/1200V)
20kHz
ERW08
diode Vr 1200v
"Power Diode"
1200V 5A DIODE
1200V fast
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SML05SC12D3
Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Text: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching
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SML05SC12D3
SML05SC12D3B
SML05SC12D3
LE17
MIL-PRF19500
QR217
schottky rectifier diode
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Untitled
Abstract: No abstract text available
Text: 1 2 TO-220 1 - Cathode 2 - Anode Back of Case - Cathode APT5SC120K 1200V 5A 1 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier • Switching Losses Nearly
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O-220
APT5SC120K
O-220
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Untitled
Abstract: No abstract text available
Text: APT05DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 5A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery
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APT05DC120HJ
OT-227)
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STA512
Abstract: A512 STTA5 DPAK JEDEC OUTLINE TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE ISOWATT220AC STTA512B STTA512B-TR STTA512D STTA512F
Text: STTA512D/F/B/FP TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 5A VRRM 1200V trr (typ) 45ns VF (max) 2.0V K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
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STTA512D/F/B/FP
ISOWATT220AC,
O-220FPAC
STTA512B
STTA512FP
STA512
A512
STTA5
DPAK JEDEC OUTLINE
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
ISOWATT220AC
STTA512B
STTA512B-TR
STTA512D
STTA512F
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LE17
Abstract: MIL-PRF19500 QR217 SML05SC12DLCC3
Text: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12DLCC3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching
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SML05SC12DLCC3
SML05SC12D3B
LE17
MIL-PRF19500
QR217
SML05SC12DLCC3
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PDF
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Untitled
Abstract: No abstract text available
Text: CSD05120–Silicon Carbide Schottky Diode VRRM = 1200V Zero Recovery Rectifier IF = 5A Qc = 28nC Features • • • • • • • Package 1200 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD05120â
O-220-2
CSD05120
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SCS205KG
Abstract: No abstract text available
Text: SCS205KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 17nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS205KG
O-220AC
R1102B
SCS205KG
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Untitled
Abstract: No abstract text available
Text: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS105KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 5A QC 20nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS105KG
O-220AC
R1102B
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PDF
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U4 Package
Abstract: No abstract text available
Text: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120
compliant2013
T4-LDS-0103-4,
U4 Package
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Untitled
Abstract: No abstract text available
Text: MSiCSX05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared
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MSiCSX05120
O-257
MSiCSN05120
T4-LDS-0103-3,
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msc 0645
Abstract: MSICSN05120
Text: MSiCSN05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared
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MSiCSN05120
O-257
T4-LDS-0103-2,
msc 0645
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Untitled
Abstract: No abstract text available
Text: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120
T4-LDS-0103-4,
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSN05120 Available Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION This 1200 V rated SiC Schottky rectifier is in a hermetically sealed package and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared
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MSiCSN05120
O-257
O-257
MSiCSX05120
T4-LDS-0103-2,
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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OCR Scan
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MIG5Q805H
A/1200V
/l600V
961001EA
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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OCR Scan
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MIG5Q805H
A/1200V
/l600V
961001EAA1
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PDF
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JIS B 0409
Abstract: igbt STM marking IGBT 2000V .50A
Text: STTA512D/F/B TURBOSWITCH tm ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 5A I f a v V 1200V rrm 45ns trr (typ) V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
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OCR Scan
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STTA512D/F/B
JIS B 0409
igbt STM marking
IGBT 2000V .50A
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PDF
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Untitled
Abstract: No abstract text available
Text: STTA512D/F/B TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V trr (typ) 45ns V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
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OCR Scan
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STTA512D/F/B
ISOWATT220AC
STTA512F
STTA512D
STTA512B
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PDF
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