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    1200G450350 Price and Stock

    ABB Low Voltage Products and Systems 5SNA 1200G450350

    Module: IGBT; transistor/transistor,common gate,common emitter
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SNA 1200G450350 1
    • 1 $2674.79
    • 10 $2251.28
    • 100 $2251.28
    • 1000 $2251.28
    • 10000 $2251.28
    		Get Quote

    Hitachi Energy 5SNA1200G450350

    POWER IGBT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SNA1200G450350 1
    • 1 -
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    • 100 -
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    • 10000 -
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    1200G450350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1200G450350

    Abstract: 5SNA1200G450350
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G450350 CH-5600 1200G450350 5SNA1200G450350

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power


    Original     		PDF 1200G450350 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 1200G450350 UL1557, E196689 CH-5600

    S 437 Diode

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1200J450350 CH-5600 1200J450350 S 437 Diode

    5SLD 1200J450350

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1200J450350 CH-5600 5SLD 1200J450350

    iec 61287

    Abstract: 1200J450350 5SLD1200J450350
    Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1200J450350 CH-5600 1200J450350 iec 61287 5SLD1200J450350

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance


    Original     		PDF 1200J450350 UL1557, E196689 CH-5600