R1200
Abstract: No abstract text available
Text: WILLAS THRU R2000 HIGH VOLTAGE SILICON RECTIFIER SCS501V VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere VOLTAGE 40V 0.1AMP Schottky Barrier Rectifiers FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41
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R1200
R2000
OD-323
SC-76)
DO-41
MIL-STD-202E
R1200
R1500
R1800
R2000
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MHC1608S121P
Abstract: MHC2012S121U MHC1608S601L MHC3216S800R MHC3216S501P MHC4516S600W MHC1608S600Q MHC3216S500W MHC2012S251Q MHC3216S601P
Text: High Current Chip Ferrite Bead RoHS MHC Series Features 1.Combination of high frequency noise suppression with capability of handing high current. 2.The current rating up to 6 Amps with low DCR. Applications 1. High current DC power lines. 2. Circuits where a stable ground in unavailable.
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1000mA,
1500mA,
2000mA,
2500mA
3000mA,
4000mA,
5000mA,
6000mA
Page11
MHC1608S121P
MHC2012S121U
MHC1608S601L
MHC3216S800R
MHC3216S501P
MHC4516S600W
MHC1608S600Q
MHC3216S500W
MHC2012S251Q
MHC3216S601P
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PBY 386
Abstract: SL1016 PBY160808T-601Y-N LVS404018-3R3 PBY321611T-601Y-N PBY160808T-110Y-N NBQ160808T-241Y-N SBCB656030T-301-N PBY160808T-121Y-N UPB453215T-700Y-N
Text: 奇力新2011封面-1.jpg 1224 x 1745 x 24 Molding Power Choke – MHCC,MHCI Series MHCCMHCI Series MHCC series is designed for low profile type with low RDC and ultra large current. Its molded magnetic shielded type is suitable for high-density mounting and ultra low buzz noise. Soldering conditions
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BCC1307RI-302-N
BCC1307RI-202-N
15max
BCC1307RI-102-N
BCC1307RI-601-N
HP-4263B
BCC1608RIBCC1810RI-
BCC2208RI-
BCC2513RIBCC3113RI-
PBY 386
SL1016
PBY160808T-601Y-N
LVS404018-3R3
PBY321611T-601Y-N
PBY160808T-110Y-N
NBQ160808T-241Y-N
SBCB656030T-301-N
PBY160808T-121Y-N
UPB453215T-700Y-N
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Untitled
Abstract: No abstract text available
Text: C U I Stack, Inc., 1997 15 7.0 5 Output Waveform Clockwise rotation viewed from front PCD40 M,C,MC,MHC,HT,MHT P Signal A a b c d Ø50 Ø30 Ø8 Signal B h min Signal Z 3-M4 P= 10 h h max 1 PPR P P h = P ± 0.75P ± 4 8 Wave Duty Ratio: 50% ± 25% a,b,c,d =
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PCD40
150mA
200kHz
294m/S2,
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Untitled
Abstract: No abstract text available
Text: C U I Stack, Inc., 1997 39.5 Output Waveform 38.5±0.5 Clockwise rotation viewed from front M,C,MC,MHC,HT,MHT 2-M3 Signal A Ø46 ØW Ø38±1 a b c d Signal B h Signal Z 2.5 P= PCD40 10 15 Supply Voltage Current Output Voltage 2/2M L Sink Current Signal Risetime
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PCD40
150mA
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PCD28
Abstract: No abstract text available
Text: D I D us P 6 ri t p Pr 5 P o ro o of f C U I Stack, Inc., 1997 Output Waveform Clockwise rotation viewed from front M,C,MC,MHC,HT,MHT 2 18 7.5 P PCD28 33 Signal A 15 a b c d Ø Signal B h min Ø39 Ø20 Signal Z P= 3-M3x5 Ø-1.0 a,b,c,d = 15 Supply Voltage
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PCD28
150mA
294m/S2,
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O635
Abstract: No abstract text available
Text: C U I Stack, Inc., 1997 39.5 Output Waveform 38.5±0.5 Clockwise rotation viewed from front M,C,MC,MHC,HT,MHT 2.5 P 2-M3 Signal A a b c d Ø52 ØW Ø38±1 Signal B h Signal Z 1 P= PPR PCD46 h min h max P P h = P ± 0.75P ± 4 8 Wave Duty Ratio: 50% ± 25%
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PCD46
150mA
NHS646
O635
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PR25
Abstract: No abstract text available
Text: C U I Stack, Inc., 1997 D I D us P6 ri t p Pr 5 P o ro o of f 18 Output Waveform Clockwise rotation viewed from front M,C,MC,MHC,HT,MHT P 33 PCD40 Signal A a b c d ØW Ø39 Signal B Signal Z 1 P= PPR 10 15 2-M3 h h min h max P P h = P ± 0.75P ± 4 8 Wave Duty Ratio: 50% ± 25%
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PCD40
150mA
PR25
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Untitled
Abstract: No abstract text available
Text: C U I Stack, Inc., 1997 Output Circuits PCD30 MD C•MC•HC•MHC 4-M3 Vcc Vcc Signal Signal Inv. Signal ØW Ø20 Ø35 Ø38 0V 0V HCP/MHCP M Vcc Vcc Signal Signal 0V 0V 2kΩ 5.5 10.0 ØW = 6.0, 6.35mm ØW = 6, 6.35 5.0 MT/MHT 2.5 Vcc 17.0 38.0 50Ω
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PCD30
100mA
150mA
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Untitled
Abstract: No abstract text available
Text: f o 5 6 ro f IP P roo t P s u D rip D C U I Stack, Inc., 1997 18 Output Waveform Clockwise rotation viewed from front M,C,MC,MHC,HT,MHT PCD40 33 Signal A a b c d ØW Ø39 Signal B h Signal Z 10 15 2-M3 P= 2.5 Supply Voltage Current Output Voltage 2/2M
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PCD40
150mA
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020l
Abstract: No abstract text available
Text: MHC-L Transient 9ROWDJH6XSSUHVVRUV +LJK&XUUHQW Series MERITEK FEATURES Axial lead terminals. High current transient suppressor. Excellent Clamping Capability. Glass Passivated Junction. Bi-directional. Low Slope Resistance. Repetition Rate duty cycle : 0.01%.
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E223045
020l
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ZLDQ250A
Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513
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pinwei0225
ZLDQ250A
pwm INVERTER welder
ZQ25A
zldq150a
ZQ50A
st600c
ZQ35A
diode m3
3phase bridge diode mds 60
SKE200A
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BC847AM
Abstract: MHC646
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC847M series NPN general purpose transistors Objective specification 2003 Jul 15 Philips Semiconductors Objective specification NPN general purpose transistors BC847M series FEATURES QUICK REFERENCE DATA
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M3D883
BC847M
OT883
BC857M
BC847AM
BC847BM
BC847CM
SCA75
613514/01/pp9
MHC646
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MAR105
Abstract: BC847AM BC847BM BC847CM BC847M BC857M
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC847M series NPN general purpose transistors Product specification Supersedes data of 2003 Jul 15 2004 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors BC847M series
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M3D883
BC847M
SCA76
R75/02/pp10
MAR105
BC847AM
BC847BM
BC847CM
BC857M
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation
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M3D744
SCA73
613514/02/pp12
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Marking Code Z7
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation
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M3D744
SCA73
613514/01/pp12
Marking Code Z7
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thyristor control arc welding rectifier circuit
Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150
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ISO9001
DXC-614Heatsink
thyristor control arc welding rectifier circuit
400 amp SCR used for welding rectifier
welding transformer SCR
ABB thyristor modules
PN5-10DA
400 amp thyristor used for welding rectifier
MDS100
three phase triac control
arc welder inverter
3KW INDUCTION HEATING POWER SUPPLY
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PEMZ7 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors FEATURES PEMZ7 PINNING • 300 mW total power dissipation
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M3D744
613514/02/pp9
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation
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M3D744
01-May-99)
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage
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M3D425
PBSS2540F
SCA73
613514/01/pp8
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PBSS2540M
Abstract: PBSS3540M SC-101
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat BISS transistor Product specification 2003 Jul 22 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA
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M3D883
PBSS2540M
SCA75
613514/01/pp9
PBSS2540M
PBSS3540M
SC-101
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195u
Abstract: No abstract text available
Text: MhCQM M a n A M P co m p a n y Two-Way Power Divider 1000 - 2000 MHz DS-332 V 2.00 Features * — 0.200 T YP 5,03 < — 0.100 TYP (2.54) • 2° Phase Balance Typical • 20 dB Typical Midbancl Isolation • 1.25:1 Typical M idband VSWR, Input Guaranteed Specifications*
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DS-332
IL-STD-200
195u
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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Untitled
Abstract: No abstract text available
Text: V DOUBLE-BALANCED MIXER MODEL MD-158 5-1500 MHZ 6 dB Typical Midband Conversion Loss 35 dB Typical Midband LO-RF Isolation 1.5 dB Typical Conversion Loss Flatness Guaranteed Specifications* From -5 5 °C to +85°C Frequency Range RF, LO Ports 5-1500 MHz
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MD-158
DC-1000
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