MX26C512AC-15
Abstract: No abstract text available
Text: MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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MX26C512A
512K-BIT
100uA
MX26C512A
512K-bit,
MX26C512AC-15
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PDF
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A27020-70F
Abstract: A27020-70 a2702 1.5Volt reference diode AMIC A27020 1N914 A27020
Text: A27020 Series 256K X 8 OTP CMOS EPROM Document Title 256K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2002 Preliminary 1.0 Final version release October 7, 2003 Final 1.1 Change Vpp from 12.75V to 12.25V June 16, 2005
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Original
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A27020
A27020L-70F
32-pin
A27020-70F
A27020-70
a2702
1.5Volt reference diode
AMIC A27020
1N914
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PDF
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26C1000
Abstract: IN3064 MX26C1000A MX27C1000
Text: INDEX MX26C1000A 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • • • • • • • 128K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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Original
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MX26C1000A
100uA
MX26C1000A
PM0454
26C1000
IN3064
MX27C1000
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PDF
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AMIC A27020
Abstract: A27020-70
Text: A27020 Series 256K X 8 OTP CMOS EPROM Document Title 256K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2002 Preliminary 1.0 Final version release October 7, 2003 Final 1.1 Change Vpp from 12.75V to 12.25V June 16, 2005
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Original
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A27020
A27020L-70F
32-pin
AMIC A27020
A27020-70
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PDF
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1N914
Abstract: EN27C512
Text: EN27C512 EN27C512 512KBIT EPROM 64K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time : -45, -55, -70, and -90ns from -1V to VCC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code
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Original
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EN27C512
EN27C512
512KBIT
100mA
-90ns
28-pin
32-pin
512Kbit,
1N914
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PDF
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26c512
Abstract: MX26C512 MX26C512A IN3064 MX27C512 PM0455 26C512A MX26C512APC-12
Text: INDEX MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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Original
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MX26C512A
512K-BIT
100uA
MX26C512A
512K-bit,
su10/1997
26c512
MX26C512
IN3064
MX27C512
PM0455
26C512A
MX26C512APC-12
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PDF
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1N914
Abstract: EN27C010
Text: EN27C010 EN27C010 1Megabit EPROM 128K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time : -45, -55, -70, and -90ns from -1V to VCC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code
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Original
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EN27C010
EN27C010
100mA
-90ns
32-pin
1N914
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PDF
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1N914
Abstract: EN27C020
Text: EN27C020 EN27C020 2Megabit EPROM 256K x 8 FEATURES • Latch-Up Immunity to 100mA • Fast Read Access Time: -45, -55, -70, and -90ns from -1V to V CC + 1V • Single 5V Power Supply • Two-Line Control ( OE & CE ) • Programming Voltage +12.75V • Standard Product Identification Code
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Original
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EN27C020
EN27C020
100mA
-90ns
32-pin
1N914
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PDF
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26C512
Abstract: IN3064 MX26C512 MX26C512A MX27C512
Text: Introduction Selection Guide MX26C512A 512K-BIT[64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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Original
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MX26C512A
512K-BIT
MX26C512A
512K-bit,
26C512
IN3064
MX26C512
MX27C512
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PDF
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Untitled
Abstract: No abstract text available
Text: July 1998 SEMICONDUCTOR TM FM27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV010 is a low-power 1Mbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into
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OCR Scan
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FM27LV010L
576-Bit
128Kx8)
FM27LV010
150ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50ns The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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OCR Scan
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
512Kb
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PDF
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Untitled
Abstract: No abstract text available
Text: July 1998 SEMICONDUCTOR TM FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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OCR Scan
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
FM27LV512
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PDF
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M27C2001-15F1
Abstract: 27c2001 M27C2001
Text: SGS-THOMSON M27C2001 IL I 2048K 256K x 8 CMOS UV EPROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE TO HIGH SPEED MICROPRO CESSORS ZERO WAIT STATE. LOW POWER "CMOS" CONSUMPTION : _ Operating current 35 mA _ Stand by current 200 jiA. PROGRAMMING VOLTAGE 12.75V.
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OCR Scan
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M27C2001
2048K
M27C2001
FDIP32-W
FDIP32-W
32-PIN
M27C2001-15F1
27c2001
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PDF
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Untitled
Abstract: No abstract text available
Text: July 1998 SEMICONDUCTOR TM FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27C010 is a low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K
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OCR Scan
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FM27C010L
576-Bit
128Kx8)
FM27C010
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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OCR Scan
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ITI64K
100juA
MX26C512A
512K-bit,
as64K
PM0455
X26C512A
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PDF
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Untitled
Abstract: No abstract text available
Text: FM27LV010L PRELIMINARY FAIRCHILD S E M IC O N D U C T O R tm FM27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50^s The FM27LV010 is a low-power 1 Mbit, 3.3V-only one-time-pro
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OCR Scan
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FM27LV010L
FM27LV010L
576-Bit
128Kx8)
FM27LV010
150ns,
512Kb
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PDF
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27F256
Abstract: W 27f256 290158 170P2
Text: PKEyßälO RlM IY in te i 27F256 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming — 100 us Typical Byte-Program — 4 Second Chlp-Program EPROM-Compatible 12.75V Vpp Supply 100 Erase/Program Cycles Minimum
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OCR Scan
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27F256
28-Pin
27F256
D27F256-170P2C2
D27F256-200P2C2
D27F256-250P2C2
W 27f256
290158
170P2
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PDF
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1000AM
Abstract: No abstract text available
Text: M X 26 C 1 OOOA 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROG RAMMABLE-EPROM FEATURES • 12 8K x 8 organization O perating current: 30m A • +5V operating pow er supply S tandby current: 100uA • +12.75V program /erase voltage 100 m inim um erase/program cycles
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OCR Scan
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100uA
26C1000
26C1000A
N/02/1999
PM0454
1000AM
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N M 27C1024 1024K 64K x 16 CMOS UV EPROM - OTP ROM VERY FAST ACCESS TIME : 120 ns. COMPATIBLE WITH HIGH SPEED M ICRO PROCESSORS, ZERO W AIT STATE. LOW "CMOS'' CONSUMPTION : - Active Current 35 mA - Standby Current 1 mA. PROGRAMMING VOLTAGE 12.75V.
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OCR Scan
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27C1024
1024K
27C1024
576-bit
40-PIN
M27C1024
27C1024-20XC1
PLCC44
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PDF
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Untitled
Abstract: No abstract text available
Text: FM27C010L • "g " ™ " PRELIMINARY FAIRCHILD ì M I C O N O U C T O R tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM ■ Programming Voltage +12.75V General Description ■ Typical programming time 50(is The FM27C010 is a iow-power 1Mbit, 5V-only one-time-program
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OCR Scan
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FM27C010L
FM27C010L
576-Bit
128Kx8)
FM27C010
256Kb
FM27CQ1Q
128KX8
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PDF
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Untitled
Abstract: No abstract text available
Text: w Ê Ê m » - » MX26C51 2A = • 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 64K x 8 organization • O perating current: 30m A • +5V operating p ow er supply • S tandby current: 100uA • +12.75V program /erase voltage • 100 m inim um erase/program cycles
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OCR Scan
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MX26C51
512K-BIT
100uA
26C512
26C512A
PM0455
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PDF
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Untitled
Abstract: No abstract text available
Text: C H IL D April 1998 S E M I C O N D U C T O R TM FM27LV010L 1,048,576-Bit 128Kx8 Low Voltage, Low Power EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27LV010 is a low-power 1Mbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), organized into
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OCR Scan
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FM27LV010L
576-Bit
128Kx8)
FM27LV010
150ns,
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PDF
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6755w
Abstract: No abstract text available
Text: Ju ly 1998 s e m ic o n d u c t o r FM27LV512L 524,288-Bit 64Kx8 Low Voltage, Low Power EPROM General Description • Programming Voltage +12.75V ■ Typical programming time 50|is The FM27LV512 is a low voltage, low-power 512Kbit, 3.3V-only one-time-programmable (OTP) read-only memory (EPROM), or
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OCR Scan
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FM27LV512L
288-Bit
64Kx8)
FM27LV512
512Kbit,
150ns,
6755w
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PDF
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D L C T D R A p ril 1 9 9 8 tm FM27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM • Programming Voltage +12.75V General Description ■ Typical programming time 50ps The FM27C010 is a low-power 1Mbit, 5V-only one-time-programmable (OTP) read-only memory (EPROM), organized into 128K
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OCR Scan
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FM27C010L
576-Bit
128Kx8)
FM27C010
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PDF
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