12 V 100W POWER AMP Search Results

12 V 100W POWER AMP Result Highlights (5)

Part	Manufacturer	Description
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P

12 V 100W POWER AMP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1431T Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17	PDF
2N3440 2N5416 REPLACEMENT Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872	PDF
2N6214 Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6214 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510	PDF
40362 Abstract: 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 40362 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251	PDF
1431T Abstract: BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A P y = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A	PDF
2N6179 Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240	PDF
Untitled Abstract: No abstract text available Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	TGF2819-FS TGF2819-FS	PDF
Untitled Abstract: No abstract text available Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	TGF2819-FL TGF2819-FL	PDF
MSCQ01 Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz Text: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is	Original	MSCQ01 MSCQ01 00YFET 24Vdc, 100KHz 24Vdc 30-512MHz, module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz	PDF
RD100HHF1 Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.	Original	RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w	PDF
GaN amplifier 100W Abstract: No abstract text available Text: TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier Applications • Radar Product Features     Functional Block Diagram Frequency Range: 3.1 – 3.6 GHz Pout: 50 dBm at PIN = 27 dBm Power Gain: 23 dB (at PIN = 27 dBm) PAE: 51 % CW 1 2 3 4 5	Original	TGA2813-CP TGA2813-CP TQGaN25 GaN amplifier 100W	PDF
MGFC50G Abstract: No abstract text available Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2	Original	MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G	PDF
Untitled Abstract: No abstract text available Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416B THS6204	PDF
OPA2674 Abstract: No abstract text available Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and	Original	OPA2673 SBOS382F 340MHz 600MHz 700mA 000V/ms 16mA/ch 800mA) OPA2673 OPA2674	PDF

Untitled Abstract: No abstract text available Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416C THS6204	PDF
Untitled Abstract: No abstract text available Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416C THS6204	PDF
OPA2674 Abstract: No abstract text available Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and	Original	OPA2673 SBOS382F OPA2673 16mA/ch 700mA 460mA OPA2674	PDF
OPA2674 Abstract: opp film incoming procedure OPA2673 OPA2677 OPA2691 OPA3691 OPA691 THS6042 Text: OPA2673 OP A2 67 3 www.ti.com SBOS382D – JUNE 2008 – REVISED JANUARY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and	Original	OPA2673 SBOS382D OPA2673 16mA/ch 700mA 460mA OPA2674 opp film incoming procedure OPA2677 OPA2691 OPA3691 OPA691 THS6042	PDF
OPA2674 Abstract: No abstract text available Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and	Original	OPA2673 SBOS382F 340MHz 600MHz 700mA 000V/ms 16mA/ch 800mA) OPA2673 OPA2674	PDF
100w amplifier RD100HHF1 Abstract: rd100hHf1 100w RD100HHF1 RD100HHF1-101 RD100HH hf amplifier 100w Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 Oct2011 100w amplifier RD100HHF1 100w RD100HHF1 RD100HH hf amplifier 100w	PDF
Untitled Abstract: No abstract text available Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416B THS6204	PDF
QFN-24 Abstract: THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT G993 Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416C 21mA/Port 17pA/Hz 89dBc QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT G993	PDF
pO115 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3	Original	RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115	PDF
Untitled Abstract: No abstract text available Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers	Original	THS6204 SBOS416C THS6204	PDF

12 V 100W POWER AMP Search Results

12 V 100W POWER AMP Result Highlights (5)

12 V 100W POWER AMP Datasheets Context Search

1431T

2N3440 2N5416 REPLACEMENT

2N6214

40362

1431T

2N6179

Untitled

Untitled

MSCQ01

RD100HHF1

GaN amplifier 100W

MGFC50G

Untitled

OPA2674

Untitled

Untitled

OPA2674

OPA2674

OPA2674

100w amplifier RD100HHF1

Untitled

QFN-24

pO115

Untitled