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    Vishay Intertechnologies CRCW0603511RFKEA

    Thick Film Resistors - SMD 1/10watt 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW0603511RFKEA Reel 790,000 5,000
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    YAGEO Corporation RC0603FR-07511RL

    Thick Film Resistors - SMD 511 Ohms 100mW 0603 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RC0603FR-07511RL Reel 490,000 5,000
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    KOA Speer Electronics Inc RK73H1JTTD5110F

    Thick Film Resistors - SMD 1/10watts 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RK73H1JTTD5110F Reel 465,000 5,000
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    Kyocera AVX Components TAJA105K016RNJ

    Tantalum Capacitors - Solid SMD 16V 1uF 10% 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI TAJA105K016RNJ Reel 324,000 2,000
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    KOA Speer Electronics Inc RK73H2BTTD5110F

    Thick Film Resistors - SMD 1/4watts 511ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI RK73H2BTTD5110F Reel 305,000 5,000
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    11OHMS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    types of transistors

    Abstract: BFP405 VPS05605 internal circuit diagram of choke BCR410W AN064 RF Transistor reference SOT343 C1 c4 rf amplifier
    Text: Application Note No. 064 Silicon Discretes Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits Introduction 3 Low supply voltages in mobile electronic devices increasingly jeopardize your efforts to supply your RF amplifiers with stable bias current. Most of the commonly


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    PDF BCR410W BFP405 BFP405, VPS05605 AN064 BFP405 BCR410W types of transistors VPS05605 internal circuit diagram of choke AN064 RF Transistor reference SOT343 C1 c4 rf amplifier

    DIM600XSM45-F000

    Abstract: 110nF
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25832) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


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    PDF DIM600XSM45-F000 DS5874-1 LN25832) DIM600XSM45-F000 110nF

    DIM600NSM45-F000

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.1 February 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


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    PDF DIM600NSM45-F000 DS5873-1 LN24464) DIM600NSM45-F000

    Untitled

    Abstract: No abstract text available
    Text: HV219 HV219 Low Charge Injection 8-Channel High Voltage Analog Switch Features General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω Low parasitic capacitance DC to 10MHz analog signal frequency


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    PDF HV219 HV219 dissipation-10 10MHz -60dB 28-Pin 48-Lead

    Untitled

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


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    PDF DIM600NSM45-F000 DS5873-1 LN24760) DIM600NSM45-F000

    Untitled

    Abstract: No abstract text available
    Text: Product Summary Sheet HV219 Low Switch Resistance, Low Charge Injection, 8-Channel, High Voltage Analog Switch IC LATCHES DIN Applications ‰ Medical ultrasound imaging ‰ Nondestructive evaluation LEVEL SHIFTERS OUTPUT SWITCHES D LE CL SW0 D LE CL SW1 D LE


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    PDF HV219 48-lead 28-lead HV219 med28-lead HV219FG HV219PJ

    110nF

    Abstract: DIM600NSM45-F000
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.2 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


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    PDF DIM600NSM45-F000 DS5873-1 LN24760) 110nF DIM600NSM45-F000

    ge traction motor

    Abstract: DIM600XSM45-F000
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module


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    PDF DIM600XSM45-F000 DS5874-1 LN24724) ge traction motor DIM600XSM45-F000

    DIM600NSM45-F000

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.4 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25833) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


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    PDF DIM600NSM45-F000 DS5873-1 LN25833) DIM600NSM45-F000 450ibility

    DC 5V to DC 100V CIRCUIT DIAGRAM

    Abstract: HV20220 HV20220FG HV20220PJ HV219 HV219PJ
    Text: HV219 HV219 Initial Release Low Charge Injection 8-Channel High Voltage Analog Switch Features ! ! ! ! ! ! ! ! ! ! ! General Description HVCMOS technology for high performance Very low quiescent power dissipation-10µA Output On-resistance typically 11Ω


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    PDF HV219 dissipation-10 10MHz -60dB HV219 48-Pin A042705 DC 5V to DC 100V CIRCUIT DIAGRAM HV20220 HV20220FG HV20220PJ HV219PJ

    Untitled

    Abstract: No abstract text available
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.2 May 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25346) 4500V 2.9 V 600A 1200A *(measured at the power busbars and not the auxiliary terminals)


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    PDF DIM600XSM45-F000 DS5874-1 LN25346)

    Untitled

    Abstract: No abstract text available
    Text: DIM600NSM45-F000 Single Switch IGBT Module DS5873-1.3 April 2007 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS


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    PDF DIM600NSM45-F000 DS5873-1 LN25242) 650bility