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    O-20-A

    Abstract: No abstract text available
    Text: DATASHEET P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS F ie ld E ffe c t T ra n sis­ PACKAGE DIMENSIONS to r designed fo r DC/DC c o n ve rter and power management in mi 11imeter a p p lic a tio n s o f notebook computers.


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    PDF 160mQ 840pF O-20-A

    Untitled

    Abstract: No abstract text available
    Text: 0ÆRJLIQHT O EVERLIGHT ELECTRONICS CO.,LTD. Device 5.0mm Round MODEL NO : Type LED Number : nm : Page : 1/4 1.A11 dimensions are mi 11imeters inch , • Audio Equipment • Moni tor tolerance is 0.25 mm except be specified. 2.An epoxy meniscus may extend about is


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    PDF CDLE-033-369 333-2SDRC/S530-A4 11imeters 333-2SDRC/S530-Ã 30min

    MIL-S-19500/578

    Abstract: JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 Sep 94. INCH-POUND MIL-S-19500/578B 8 June 1994 SUPERSEDING MIL-S-19500/578A 19 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, SILICON, SUITCHING


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    PDF MIL-S-19500/578B MIL-S-19500/578A 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N4148-1 MIL-S-19500/578 JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011

    5962-86032

    Abstract: CMGA5-P114
    Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA A Inactive device 01 for new design. Add device 03. Upgrade to full military temperature range. Change drawing CAGE code. Editorial changes throughout. 88-04-15 W. Heckman B Add case outline Y. 89-09-08 W. Heckman


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    PDF MIL-STD-1835. 5962-R222-93. MIL-BUL-103. MIL-BUL-103 T00470Ã 00G3471 5962-86032 CMGA5-P114

    1N5A

    Abstract: SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002
    Text: MIL-M-385I0/190C 22 October 1986 suPERstunrsMIL-M-38510/190B 10 July 1984 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, CMOS/ANALOG MULTIPLEXERS/DEMULTIPLEXERS WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON, POSITIVE LOGIC This specification is approved for use by all Depart­


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    PDF mil-m-385I0/190C MIL-M-38510/190B MIL-M-38510. 1N5A SVI 3003 ds2 lio board 98 UTA ING lg crt tv circuit diagram DC iris schematic IN58 bl in78 tv haeir 1N4002

    1h31

    Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
    Text: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,


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    PDF 0Q0012S -1Q600/ 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1W3175. 1N3176, 1N3177, 1h31 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177

    5962-9206103HMX

    Abstract: NHI-1573 5962-9206103HZX TXAL 808 B qml-38535 MR63147MFM-2 NHI-1559 1594F MR63147MPS NHI158
    Text: REVISIONS D E S C R IP T IO N LTR DATE YR-MO-DA APPROVED A Add device type 02. Make corrections to paragragh 1.3 and table I. Add waveform distortion test to table 1. The entire document has been through rewrite. 93-06-15 K. A. Cottongim B Add vendor CAGE number 57363. Add device types 03, 04, 05, and 06. Add


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    PDF 8K957. MIL-PRF-38534. 206106H4X NHI-1581/883 5962-9206106H5X NHI-1581FP/883 5962-9206107HZX ACTU58-201-3 5962-9206108HZX ACTU64-201-3 5962-9206103HMX NHI-1573 5962-9206103HZX TXAL 808 B qml-38535 MR63147MFM-2 NHI-1559 1594F MR63147MPS NHI158

    qml-38535

    Abstract: LT1078 LT1078A LT1079 LT1079A
    Text: REVISIONS LTR DESCRIPTION Add device types 03 and 04. TABLE I. DATE Changes to Add case outline X. Inactivate case outline G. Make changes to 1.2.4, FIGURE I, and FIGURE 2. APPROVED YR-MO-DA 93-07-06 M. A. FRYE 95-06-30 M. A. FRYE THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.


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    PDF IL-BUL-103 MIL-BUL-103 QML-38535. QML-38535 MIL-BUL-103. LT1078 LT1078A LT1079 LT1079A

    1N3208

    Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211
    Text: Data Sheet No. PD-2.010C INTERNATIONAL RECTIFIER I«R 1N3208 SERIES 15 Amp Stud-mounted Silicon Rectifier Diodes M ajor Ratings and Characteristics it A v ; 0 1C |2 t U n its 15* A 150* o<- '• 5 0 h 239 X o CD lc-s~M Description/Features 1N 32D 8 250* & 5C H r


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    PDF 1N3208 1/4-23UNF-2A 00-203AB 1N3208R 1N3209 1N3209R 1N3210 1N3210R 1N3211

    TL378A

    Abstract: s-band magnetron M1461
    Text: M 1 4 6 1 S-Band Magnetron G E N E R A L D ES C R IP T IO N M1461 is a fixed frequency pulsed type S-band magnetron, desined to operate in the frequency range of 3025 to 3075 MHz with a peak output power of 50 kW.It is waveguide output type and conduction cooled. A permanent magnet is packaged as part of the magnetron.


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    PDF M1461 TL378A s-band magnetron

    SVI 3206

    Abstract: SVI 3206 D svi 3201 svi 3001 2N910 JANTX 2N910S 2N911 2N912 2N910 2N911S
    Text: I— - 1 I- 1 | Thedocueentetion I and .process |conversion»çasores<nac*#sary to | | comply *ith.this revision.shall be | completed by 5 May 1995 | INCH-POUND | 1- - — ' j MIL-S-19500/274CCER I -


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    PDF MIL-S-19500/274CCER) MIL-S-19500/274B 2N910, 2N910S, 2N911, 2N911S, 2N912, 2N912S, SVI 3206 SVI 3206 D svi 3201 svi 3001 2N910 JANTX 2N910S 2N911 2N912 2N910 2N911S

    irf48n

    Abstract: 79M15 mfd navy MIL-M-38510/115 79m05 IRF 24N 2N6296 TX2N4033
    Text: MIL-M-38510/115 27 A pril 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, VOLTAGE REGULATORS, MONOLITHIC SILICON This specification 1s approved for use by all Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for fixed output, monolithic


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    PDF MIL-M-38510/115 MIL-M-38510. vol30 irf48n 79M15 mfd navy 79m05 IRF 24N 2N6296 TX2N4033

    cdq8

    Abstract: qml-38535 28F016 mil-h-38534 RHA level D XX74h xx96H QML-38534
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET 35 REV SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 4 5 6 7 8 9 10 11 12 13 14 REV REV STATUS OF SHEETS SHEET PREPARED BY Gary L. Gross PMIC N/A STANDARD MICROCIRCUIT DRAWING


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    PDF 16-MEG, unli-103 QML-38535. QML-38535 MIL-BUL-103. MIL-BUL-103 T00470Ã cdq8 28F016 mil-h-38534 RHA level D XX74h xx96H QML-38534

    EL 14v 4c

    Abstract: LG E50 E41-E42 MIL-STD-8 7e46 q 1257 K5 transistor marking E39 E43 marking ic isl 887 bbc tq2
    Text: M I L - M - 38510/118 31 March I 98 O MI LIT ARY S P E CIF ICA TIO N M I C R O C IR CUI TS, LINEAR, VOLTAGE R EGU LATORS, A DJU STABLE, NEGATIVE, MON O L I T H I C SILICON This s p e c i f i c a t i o n is approv ed for use by all D e p a r t ­ ments and


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    PDF MIL-M-38510/118 MIL-M-38510. MIL-M-38510 LM137H LM137K EL 14v 4c LG E50 E41-E42 MIL-STD-8 7e46 q 1257 K5 transistor marking E39 E43 marking ic isl 887 bbc tq2

    mb7138e

    Abstract: mb7138
    Text: FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY M B 7 1 3 7 E /H M B 7 1 3 8 E /H /Y M B 7 1 3 7 E -S K /H -S K M B 7 1 3 8 E -S K /H -5 K /Y -5 K Decem ber 1 987 E d itio n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 2048 OWRDSX 8 BITS T h e F u jits u M B 7 1 3 7 and M B 7 1 3 8 are high speed S c h o ttk y T T L e le c tric a lly


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    PDF 16384-BIT 11imeters 008I0 20ITYP C2S004S-2C mb7138e mb7138

    IN3070

    Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,


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    PDF MIL-S-19500/169H MIL-S-19500/169G 1N3070, 1N3070-1, 1N3070UR-1, 1N49M, 1N493A-1, 1N4938UR-1 MIL-S-19500. JANCA4938) IN3070 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 DIODE EJL

    mc 4011

    Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
    Text: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT


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    PDF MIL-S-19500/550A MIL-S-19500/550 DI00E, 1N6304, 1N6305, 1N6306, JANHCA1N6304) 1N6304 JANHCA1N6304 JANKCA1N6304 mc 4011 MIL-S-19500 1N6305 1N6306 DO-203AB

    qml-38535

    Abstract: 87C51 T0D47Q 5962-87684 ccpm
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M0-DA A Add case outline U. Add vendor cage 18325. Add programming method B. Changes 4.3.1c and 4.3.1e. Editorial changes throughout. 89-03-01 W. Heckman B Add device type 02, editorial changes throughout. Add test


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    PDF 5962-R231-92. RUL-103 MIL-BUL-103 QML-38535. QML-38535 MIL-BUL-103. TDG47GÃ 87C51 T0D47Q 5962-87684 ccpm

    1H28

    Abstract: IN4557B IN4557 MR 4011 IN4502 TNR*G CI 4066 vol 1N2804 1N2811 1N2814
    Text: MIL SP EC S IC1DDDD12S 0D0Q773 b | • " T-ll-lS MIL-S-19500/114E AMENDMENT 4 21 M a r c h 1 9 8 4 SUPERSEDING AMENDMENT 3 3 November 1982 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , D I O D E , S I L I C O N , V O L T A G E R E G U L A T O R B A N D RB T Y P E S ,


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    PDF 00D01E5 0D0Q773 MIL-S-19500/114E 1N2804 1N2811, 1N2813, 1N2814, 1N2816, 1N2818 1N2820, 1H28 IN4557B IN4557 MR 4011 IN4502 TNR*G CI 4066 vol 1N2811 1N2814