Untitled
Abstract: No abstract text available
Text: 8 FO-55117-B 7 HONEYWELL PART NUMBER SPS-A100D-HAMS 5 6 1 2 REV DOCUMENT E 0076277 CHANGED BY MBN CHECK 11APR11 DSK REF POINT "B" F LINEARITY #0.4% OF FULL SCALE 4.75 4.5 OUTPUT VOLTAGE VOLTS 3 SENSOR OUTPUT PERFORMANCE CHART REF POINT "C" E 4 DEFINITIONS:
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FO-55117-B
SPS-A100D-HAMS
11APR11
15JUN10
5M-1994
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Untitled
Abstract: No abstract text available
Text: 8 FO-55117-B HONEYWELL PART NUMBER SPS-A180D-VAMS 7 5 6 1 2 REV DOCUMENT CHANGED BY F 0076277 MBN CHECK 11APR11 DSK REF POINT "B" REF POINT "C" DEFINITIONS: 1 - % LINEARITY SHALL BE THE QUOTIENT OF THE MEASURED OUTPUT DEVIATION FROM THE LINEARITY #0.4% THE MEASURED TEMPERATURE TO THE FULL SCALE OUTPUT SPAN
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FO-55117-B
SPS-A180D-VAMS
11APR11
19JUL10
5M-1994
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C11040
Abstract: No abstract text available
Text: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21
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SiB437EDKT
SC-75
2002/95/EC
SC-75-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
C11040
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IRFB9N65
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFB9N65
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4134DY-T1-E3
Abstract: si4134 c065
Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4134DY
2002/95/EC
Si4134DY-T1-E3
Si4134DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4134
c065
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Untitled
Abstract: No abstract text available
Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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Si4228DY-T1-E3
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: AC-DC 250/350 Watts xppower.com JPS250/350 Series • 200 W / 300 W with Convection Cooling • High Efficiency - up to 88% • Meets 1U, Low Profile Requirements • AC OK & DC OK Signals • Zero Voltage Switching Technology • Remote On/Off & Remote Sense
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JPS250/350
JPS250)
VAC/230
JPS350)
VAC/60
JPS25citor.
JPS250PS
JPS350
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SI4176DY
Abstract: No abstract text available
Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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Si4176DY-T1-E3
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4176DY
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Untitled
Abstract: No abstract text available
Text: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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Si4228DY-T1-E3
2002/95/EC
25trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4134DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.014 at VGS = 10 V 14 0.0175 at VGS = 4.5 V 12.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4134DY
2002/95/EC
Si4134DY-T1-E3
Si4134DY-T1-GE3
11-Mar-11
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si4176
Abstract: SI4176DY
Text: Si4176DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.020 at VGS = 10 V 12a 0.027 at VGS = 4.5 V 10.4 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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Si4176DY-T1-E3
2002/95/EC
11-Mar-11
si4176
SI4176DY
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4AB20
Abstract: No abstract text available
Text: Si4936CDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)d 0.040 at VGS = 10 V 5.8 0.050 at VGS = 4.5 V 5.5 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) APPLICATIONS
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Si4936CDY-T1-E3
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
4AB20
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si1424
Abstract: No abstract text available
Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21
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Si1424EDH
2002/95/EC
OT-363
SC-70
Si1424EDH-T1-GE3
11-Mar-11
si1424
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Untitled
Abstract: No abstract text available
Text: 4 DRAWING THIS MADE IN THIRD DRAWING ANGLE IS 3 PROJECTION UNPUBLISHED RELEASED FOR 2 LOC PUBLICATION COPYRIGHT ALL INTERNATIONAL RIGHTS AJ RESERVED. DI 5T REV I 5 I0 N 5 6 ZONE DESCR IPTIO N LTR H1 APPD DATE 11APR11 R EV ISED P ER ECO-11-005294 HMR D D, f i
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ECO-11-005294
11APR11
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING C IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION LOC DiST REV 1SIONS ALL RIGHTS RESERVED. P LTR DATE REVISED PER ECO-11-005294 P2 SE CT ION DESCRIPTION OWN 11APR11 APVD RK HMR A- A c B TOLERANCES UNLESS OTHERWISE S P EC IF IE D ± 0 .3
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ECO-11-005294
11APR11
777UIW
22JUL99
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Untitled
Abstract: No abstract text available
Text: i’/ N A ; . I C.SAi 5 3 - I M A D E IN T H i H O A N Ô L C PRO JC C T lG t^ T T i: ; - . Ü R A W IN C IS U N P U B L I S M e O . ' (C C ^ r’YHiCH; i L E A S E D FCW r - l ' Q L I C A T l O N 19 OAre RESCRir*" t A rr-rtO V E D • HMR REVISED PER ECO-11-005294 11APR11
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ECO-11-005294
11APR11
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Untitled
Abstract: No abstract text available
Text: w f m vmnmMam BW^yiHWUKW W rt«W BS*SiV«wj» IK KW V im M VRniW lo c DR AW IN G MAOE <N T H IH D ANG LE PROJECTION ré R E V IS IO N S P F ZONE LTR G1 APPROVED D ATE D E S C R IP T IO N REVISED PER ECO-11-005294 11APR11 HMR D .too ->07S J P /z & O X . . 2 2 /
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ECO-11-005294
11APR11
s3292
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Untitled
Abstract: No abstract text available
Text: I D I ST lo c £ > H S3 R EV IS IO N S p F ZONE D E S C R IP T IO N LTR J1 / APPROVED DATE REVISED PER ECO-11-005294 11APR11 HMR D .180 SECTION IB'JB A U N L E S S O T H E R W IS E S P E C IF IE D D IM E N S IO N S A R E IN I N C H E S . TOLERANCES O N : D E C IM A L S
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1st53
eco-11-005294
11apr11
t030ci
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. T C o p VP i Ght W IR E p r IN S U LA T IO N D IA ~ 14 . REVISIONS RELEASED FOR PUBLICATION ZONE LTR R1 / D isr LOG D R A W I N G MADE IN T H I R D ANGLE P R O J E C T I O N APPROVED DATE DESCRtPT ION 11APR11 REVISED PER ECO-11-005294
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ECO-11-005294
11APR11
3230II
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Untitled
Abstract: No abstract text available
Text: I D RA W IN G M A D E IN A M E R IC A N P R O JE C T IO N r ;k h 6 14 R E V IS IO N S G1 A PPRO V ED DATE D E S C R IP T IO N LTR PAINT OIST^ / :• LOC HMR 11APR11 REVISED PER ECO-11-005294 SERRATIONS iN l^ U L ^ v n O N J WIRE5TOP BO D Y -A o M F r .031
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ECO-11-005294
11APR11
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Untitled
Abstract: No abstract text available
Text: p; ÌtY- Í D R A W IN G M A D E I N A M E R I C A N P R O J E C T IO N fi' 1UOC =3 \A- 1 \_ R E V IS IO N S DATE description utr 11APR11 C1 REVISED PER ECO-11-005294 \S «m*»t w|* ' APPROVED -i •J ••4 '•'i Ii :a HMR A <b a A SERRATIONS Î9 SLEEVE
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ECO-11-005294
11APR11
L-T-1072
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ECR-11
Abstract: 4-40-UNC m3 1-1734285-6
Text: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT BY TYCO ELECTRONICS CORPORATION. - LOC ALL MÖMTS RESERVED. REVISIONS DW •mr B1 K S ifilH Iû N REVISED E C R -1 1 -0 0 7 7 9 9 TKIE” m 11APR11 JC WK B±0.25 AM NOTES: 1. MATERIAL: 1.1 HOUSING/BACK COVER:
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X-1734285-6
X-1734285-5
X-1734285-4
PC99/ACTUAL
X-1734285-3
X-1734285-2
X-1734285-1
31MAR2000
ECR-11
4-40-UNC m3
1-1734285-6
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