UMZ-1153-D16
Abstract: UMZ-1153
Text: CONFIDENTIAL MIN. Frequency, MHz 136 Power Output, dBm +7.0 TYP. MAX. 174 +9.0 +11.0 -25 -15 @ Offset = 1kHz -98 -93 @ Offset = 10kHz -123 -118 @ Offset = 100kHz -143 -138 @ Offset = 1MHz -163 -158 Pushing, MHz/V .3 .5 Pulling, MHz p-p, @12dBr, all phases
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10kHz
100kHz
10MHz
12dBr,
UMZ-1153-D16
UMZ-1153
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Untitled
Abstract: No abstract text available
Text: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM
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MS1202
MS1202
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SD1219
Abstract: Transistor sd1219 ASI10733
Text: SD1219 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The SD1219 is Designed for 12.5 V Collector Modulated AM Class C Amplifier Service in the 118 to 136 MHz Avionics Communication Band. PACKAGE STYLE .380" 4L STUD .112x45° A C B FEATURES: E • PG = 8 dB Typical at 60 W/ 175 MHz
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SD1219
SD1219
112x45°
ASI10733
Transistor sd1219
ASI10733
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Untitled
Abstract: No abstract text available
Text: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM
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MS1202
MS1202
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MS1202
Abstract: max6535
Text: MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features • • • • • 175 MHz 12.5 VOLTS POUT = 7.0 W GP = 8.4 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM
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MS1202
MS1202
max6535
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transistor 3l2
Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Text: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft
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2N5994
transistor 3l2
2N5994
Arco 403
118-136 mhz
rca 381 transistor
rca 632
RCA 431 transistor
RCA Power Transistor 4 225
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TB-157
Abstract: No abstract text available
Text: TB-157 Gain & Efficiency flatness;VDS=28Vdc, Idq=1.2A 32 100 30 90 28 Gain 26 80 Efficiency Pout fixed at 100W 24 70 22 60 20 18 50 118 120 122 124 126 128 130 132 134 136 138 140 Freq in MHz TB-157 Pin vs Pout F=118MHz; VDS=28Vdc, Idq=1.2A 120 33 100 31 Linear @40W
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TB-157
28Vdc,
118MHz;
128MHz;
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rf push pull mosfet power amplifier
Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30
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200NUM1
SQ221
LK822
LK722
LX521
rf push pull mosfet power amplifier
100 watt hf mosfet 12 volt
150w amplifier RF VHF 139 144 mhz
uhf 150w mosfet
150w amplifier RF VHF 139 - 144 mhz
LDMOS 15w
ldmos l2711 vhf
LP801
LK602
LR941
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SH7709A
Abstract: MCS B21
Text: Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL
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IOIS16/PTG
SH7709A
MCS B21
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CK102
Abstract: BP240
Text: Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL
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IOIS16/PTG
CK102
BP240
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Untitled
Abstract: No abstract text available
Text: 1.3 Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL
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SH7729R.
IOIS16/PTG
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SH77
Abstract: MCS B21 AJ06 TBT 136 ag02
Text: 1.3 Pin Description 1.3.1 Pin Assignment 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 EXTAL XTAL
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SH7729.
IOIS16/PTG
SH77
MCS B21
AJ06
TBT 136
ag02
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vk200 ferrite bead
Abstract: inductor vk200 FERROXCUBE VK200 vk200 VK200 INDUCTOR 093b 40977 SILVER-MICA VK-200-10 40975
Text: File No. 606 RF Power Transistors Solid State Division 40975 40976 40977 0 .0 5 - ,0 .5 - ,and 6-W , 118-136-M H z Silicon N -P -N O verlay Transistors 4Hr F o r H igh-Pow er V H F A m p lifie rs f Features: 40975 40976 40977 J E D E C T O -3 9 R C A H F -4 4
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HF-44
H-1381
H-1779
RCA-40975,
118-136-MHz
vk200 ferrite bead
inductor vk200
FERROXCUBE VK200
vk200
VK200 INDUCTOR
093b
40977
SILVER-MICA
VK-200-10
40975
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Untitled
Abstract: No abstract text available
Text: Signal Sources High-Performance RF Signal Generators cont. • 10 kHz to 1280 MHz frequency range • <–147 dBc/Hz SSB phase noise at 10 kHz offset • 0.1 Hz frequency resolution • 100 kHz to 2560 MHz frequency range • AM/FM/⌽M/pulse in one generator
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662A/8663A
8662esized
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PMB7900V2.1-B
Abstract: No abstract text available
Text: MCRO series Voltage Controlled Oscillator with ceramic coaxial resonator BOWEI INTEGRATED CIRCUITS CO.,LTD. Features Ceramic coaxial resonator, Low phase noise l Two standard packages l Frequency 400~5000MHz l ROHS Compliant l Part number Frequency MHz Tuning
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5000MHz
10/100KHz
MCRO422
MCRO585
MCRO646
MCRO698
MCRO720
MCRO845
MCRO896
MCRO930
PMB7900V2.1-B
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WJ-A28-2
Abstract: c 4977 transistor TRANSISTOR 13000 WJ-CA28
Text: WJ-A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: < 1.4:1 (TYP.) Outline Drawings
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WJ-A28-2
SMA28-2
A28-2
c 4977 transistor
TRANSISTOR 13000
WJ-CA28
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MVCO165
Abstract: No abstract text available
Text: MVCO 系列 集成表面贴装压控振荡器 博威集成电路有限公司 性能特点 l 国际标准封装12.7x12.7×4.0mm3 l 低电压工作+5V，+3V等可选 l 频率范围覆盖25～7200MHz l 绿色环保，满足ROHS标准 型号 频率范围 MHz
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7200MHz
10/100KHz
MVCO038W
MVCO032
MVCO50J
MVCO57
MVCO044
E5052A)
MVCO4350
MVCO165
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ADA-120/A
Abstract: 225 400 MHz transmitting antenna array antenna ADC-2100 CDA-900 printed dipole ADC-2100-A Antennas vhf DDA-900 SDA-122
Text: DIPOLE ANTENNAS PASSIVE PRINTED DIPOLES Printed dipole antennas and dipole antenna arrays are available for cellular band 890 - 960 MHz , PCN networks (1.7 to 2.3 GHz and other frequency bands) and other applications. Cellular base station antennas are available in
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DDA-900
CDA-900
DDA-900
CDA-90
120/A
ADA-120/A
225 400 MHz transmitting antenna
array antenna
ADC-2100
printed dipole
ADC-2100-A
Antennas vhf
SDA-122
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ALC 655
Abstract: ALC 665 ALC 887 MRF158 VK200
Text: Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
ALC 655
ALC 665
ALC 887
MRF158
VK200
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WJ-A28-2
Abstract: No abstract text available
Text: u u J A28-2 / SMA28-2 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.5 dB TYP. HIGH EFFICIENCY: 27 mA (TYP.) @ 5 VDC GOOD DYNAMIC RANGE: 105 dB (TYP.) IN 1 MHz BW ♦ LOW VSWR: <1.4:1 (TYP.) Outline Drawings
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A28-2
SMA28-2
1-800-WJ1-4401
WJ-A28-2
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940 629 MOTOROLA 220
Abstract: MOTOROLA POWER 726 MOS FET TRANSISTOR MRF158 VK200 20WATTS
Text: MOTOROLA Order this document by MRF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF158/D
MRF158
940 629 MOTOROLA 220
MOTOROLA POWER 726 MOS FET TRANSISTOR
MRF158
VK200
20WATTS
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MOTOROLA POWER TRANSISTOR lc 945
Abstract: zener ap 474 940 629 MOTOROLA 113
Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.
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RF158/D
MOTOROLA POWER TRANSISTOR lc 945
zener ap 474
940 629 MOTOROLA 113
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c5802
Abstract: c3207 C1162 C3150 C4106 C3206 c6067 C3205 c4137 c3271
Text: Technical Information Electronics Part Number Index Catalog Number page 4EPL1S . . 132 4EPL4S . . 132 4ERS1S . 133 4ERS4S . 133 05091 . 141
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E3842S
E3843S
EO24C0045510
EO26C0045510
EO28C0045510
EO28P0181510
EO28P0501510
EO30C0045510
SP00C0011010
SP00C0012010
c5802
c3207
C1162
C3150
C4106
C3206
c6067
C3205
c4137
c3271
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Wja66
Abstract: No abstract text available
Text: WJ-A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: 4.0 dB (TYP.) HIGH OUTPUT LEVEL: +15 dBm (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°, 100 -1000 MHz
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WJ-A66
SMA66
50-ohm
Wja66
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