HT3814B
Abstract: romance de amor HT3812J HT3812H Rudolph The Red-Nosed Reindeer MUSIC NOTES ht3813a HT3813D 4123 transistor HT3814A HT3812B
Text: HT3810 Series 128-Note Melody Generators Features • • • • • • • Operating voltage: 2.4V~5.0V 7 tempo options: 469, 234, 156, 117, 94, 78, 67 2 Envelope sustain durations: 1 beat, 2 beat s 2 “CHA” sustain duration options: 1/8 beat or 1/4 beat
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HT3810
128-Note
128-note
128-notes
HT3814F
HT3814G
HT3814H
HT3814I
HT3814J
HT3814B
romance de amor
HT3812J
HT3812H
Rudolph The Red-Nosed Reindeer MUSIC NOTES
ht3813a
HT3813D
4123 transistor
HT3814A
HT3812B
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Untitled
Abstract: No abstract text available
Text: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range
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Untitled
Abstract: No abstract text available
Text: Maxi Family 72 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range
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Untitled
Abstract: No abstract text available
Text: Maxi Family 110 V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 66 – 154 V continuous • Isolated output • Encapsulated circuitry for shock and Applications • • •
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Untitled
Abstract: No abstract text available
Text: Maxi Family 72V Input Actual size: 4.6 x 2.2 x 0.5 in 117 x 56 x 12,7 mm S C US C NRTL US DC-DC Converter Module Features • DC input range: 43 – 110 V continuous • Isolated output • Encapsulated circuitry for shock and • Extended temperature range
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3055t
Abstract: 2955T 2n2646 pin N2647 N-055 3055H n055 2N2646 2N4393 RU 6102
Text: AD VA NI O E R L I K O N / SEMICOND 3bE D • ü2blbMñ QOQDQ1S 3 ■ S E L I — r - 2 1 /7 - ö SILICON TRANSISTORS SEMICONDUCTORS g Power transistors TYPE NPN ; PNP PD Tc=25°C W VCBO V 117 117 117 117 75 75 75 115 75 150 150 150 117 25 50 25 50 50 50
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02Llb4Ã
0D00D1S
3055H
3055T
O-220
2955T
-TO-220
800ru
O-105
O-106
2n2646 pin
N2647
N-055
n055
2N2646
2N4393
RU 6102
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smd transistor 6m
Abstract: No abstract text available
Text: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum
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Untitled
Abstract: No abstract text available
Text: V A R I- L S IE CO I N C D Bl m 37b2H 0001D4Ô S • VRL X -5 0 -1 5 VCO-117 Voltage Controlled Oscillator 300-600 MHz GUARANTEED MINIMUM PERFORMANCE DATA DESCRIPTION The VCO-117 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor
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37b2H
0001D4Ã
VCO-117
6061-T6.
UNC-38
QQ-N-290,
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SGS115
Abstract: sgs110 SGS111 SGS112
Text: £ Z 7 S G S -T H O M S O N T IP /S G S I10- 111-112 ^ 7 # MOœLiOTOMDOi T IP /S G S 1 15-116-117 POWER DARLINGTONS D E S C R IP T IO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SGS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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TIP110,
TIP111,
TIP112
SGS110,
SGS111,
SGS112
OT-82
SGS115
sgs110
SGS111
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v16070
Abstract: No abstract text available
Text: Ordering number: EN 3115 FC 117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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2SA1753,
v16070
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sgs110
Abstract: SGS116
Text: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration
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TIP/SGS110-111-112
TIP/SGS115-116-117
TIP110,
TIP111,
TIP112
SGS110,
SGS111,
SQS112
O-220
OT-82
sgs110
SGS116
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LM117T
Abstract: motorola LM317 REGULATOR IC 7905 motorola lm317k lm317t motorola transistor a750 K1170 1E75 lm317 so8 LM117 to92
Text: MOTOROLA s c {TELECOM} 14E » I b3b?aS3 0001733 1 | LM 117 ^ M O T O R O L A LM 217 LM 317 Sp ecification s and A p plications Inform ation THREE-TERMINAL ADJUSTABLE POSITIVE VOLTAGE REGULATORS THREE-TERMINAL ADJUSTABLE OUTPUT POSmVE VOLTAGE REGULATORS
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LM117/217/317
LM117
CMH30HO:
LM117T
motorola LM317
REGULATOR IC 7905
motorola lm317k
lm317t motorola
transistor a750
K1170
1E75
lm317 so8
LM117 to92
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T1P112
Abstract: No abstract text available
Text: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117
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TIPT10,
TIP111,
TIP112
T-33-29
T1P112
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ic 4604
Abstract: lvco 251C 2SB1172 2SB1172A 2SD1742 2sb1742 t150t
Text: 2SB1172, 2SB1172A Power Transistors 2 S B 1 1 7 2 , 2SB 117 2A Silicon PNP Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S D 1 7 4 2 , 2 S B 1 7 4 2 Package Dimensions Unit • mm • Features 3-7 max, 7.3max. 3.2max. • High DC current gain hpE and good linearity
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2SB1172,
2SB1172A
2SD1742,
2SB1742
2SB1172
ic 4604
lvco
251C
2SB1172A
2SD1742
2sb1742
t150t
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Untitled
Abstract: No abstract text available
Text: 2N3055S m \\ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE T O - 3 U 4J 15 A lc 7.0 A T -U S E A T IN G PLANE. V CE 60 V p 1 DISS 117 W @ Tc = 25 °C
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2N3055S
2N3055S
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ESM117
Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
Text: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique
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ESM162
CB-19
ESM117
ESM162
max-h21E
ESM16
esm 117
esm 906 data
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730C-04
Abstract: moc8103 M0C8104 MOC8101 MOC8102 MOC8104 730D-05 MOC81Q4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL ca <S> ® CSA BS SEMKO OEMKO NEMKO SETI BABT 6-Pin DIP Optoisolators For Power Supply Applications No Base Connection MOC8101* [CTR = 50-80% ] MOC8102* [CTR e 73-117%] MOC8103 [CTR e 108-173%] MOC8104 [CTR
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MOC8101,
MOC8102,
MOC8103
MOC8104
730C-04
M0C8104
MOC8101
MOC8102
730D-05
MOC81Q4
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Untitled
Abstract: No abstract text available
Text: CONIdELL CORP/ ANALOG SYS S IE D 2413*117 0D00353 bSb B N R C -79-fc-H MA-207 Super Fast, Wideband Operational Amplifier r iN H L O G S Y S T E M S .G E N E R A L D E S C R IP T IO N ' D A TA SHEET FEATURES' 1.5GHz GAIN-BANDWIDTH PRODUCT ±800V / uS SLEW RATE
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0D00353
-79-fc-H
MA-207
200mA
MA-207
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ha2526
Abstract: HA7-2620 HA-2620 HA2622 HA-2625-5 HA2625 2625-5 HA2-2625-5
Text: HARRIS SEMICOND SECTOR m W blE ] • 43G2B71 004bSM5 117 H H A S HA-2620, HA-2622 HARRIS HA-2625 SEMICONDUCTOR Very Wideband, Uncompensated Operational Amplifiers RN M SO B3 Features Description • Gain Bandwidth Product Ay 2 5). 100MHz • High Input Im pedance.500MQ
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43G2B71
004bSM5
HA-2620,
HA-2622
HA-2620/2622/2625
HA-2620)
100MHz
HA2620/2622/2625
ha2526
HA7-2620
HA-2620
HA2622
HA-2625-5
HA2625
2625-5
HA2-2625-5
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SSM2116
Abstract: ssm-2116 018t power SSM2018TR SM2018T 018T SM2118T SSM2018 IC 7470 pin configuration
Text: Trimless Voltage Controlled Amplifiers A N ALO G D E V IC E S SSM2018T/SSM2118T* FUNCTIONAL BLOCK DIAGRAMS FEATURES 117 dB Dynamic Range 0.006% Typical THD+N l@ 1 kHz, Unity Gain 140 dB Gain Range No External Trimming Required Differential Inputs Complementary Gain Outputs
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SSM2018T)
SSM2118T)
SSM2018T/SSM2118T*
2018T
2118T
2018T)
2118T)
SSM2116T
SSM2118T
SSM2116
ssm-2116
018t power
SSM2018TR
SM2018T
018T
SM2118T
SSM2018
IC 7470 pin configuration
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3055 5C pnp transistor
Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •
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TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
25-mJ
TIP110
TIP111
3055 5C pnp transistor
tip 212
tip 127 texas instruments
cd 5151 cd
darlington complementary power amplifier tip 142
TIP 42 transistor
darlington circuit tip 42
tip darlington pnp
tlp111
transistor tip 3055
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TIP111
Abstract: No abstract text available
Text: TYPES TIP110, TIPTI1, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COMPLEMENTARY USE WITH TIP115,TIP116,TIP 117 •' CD CO c 5 r » High S O i Capability, 40 V and 1.25 A • 50 W at 25°C Case Temperature • Min hFE of 500 at 4 V, 2 A
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TIP110,
TIP112
TIP115
TIP116
25-mJ
TIP111
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westinghouse transistors
Abstract: tic 2116 B WESTINGHOUSE transistor 2N3442 transistor 2n3442
Text: “□ o s: m m x T D 64-673 Page 3 > Silicon Power Transistors J E D E C Type 2N3442 Westinghouse cn -*J N sO For Switching, Amplifier and Regulator Applications 10 Amperes, 117 Watts O' ISJ Application The Westinghouse 2N3442 is an N PN dif fused transistor. This general-purpose tran
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2N3442
2N3442
C/2116/D
C/2117
westinghouse transistors
tic 2116 B
WESTINGHOUSE transistor
transistor 2n3442
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BDX 241
Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A
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BD137
BD138
MIL-STD-750.
OT-32
OT-32
40PEP
80PEP
BDX 241
TRANSISTOR 246
transistor BD 240
transistor BD 246
TRANSISTOR Bd 137
BD139-6
transistor BD 249
transistor bd 242
transistor BD245
BD137
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