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    transistor 2sc5296

    Abstract: 2sc5296 equivalent 2sc5296 SANYO Electric
    Text: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original
    PDF ENN5290A 2SC5296 100ns 2039D 2SC5296] transistor 2sc5296 2sc5296 equivalent 2sc5296 SANYO Electric

    transistor 2sc5296

    Abstract: 2sc5296
    Text: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original
    PDF ENN5290A 2SC5296 100ns 2039D 2SC5296] transistor 2sc5296 2sc5296

    transistor 2sc5297

    Abstract: 2SC5297 52914
    Text: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original
    PDF ENN5291 2SC5297 100ns 2039D 2SC5297] transistor 2sc5297 2SC5297 52914

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original
    PDF ENN5291 2SC5297 100ns 2039D 2SC5297]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .


    Original
    PDF ENN5290A 2SC5296 100ns 2039D 2SC5296]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5290 2SC5296 No.5290 NPN Triple Diffused Planar Silicon Transistor SAXYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s • High Speed: tr = 100ns typ. •High breakdown voltage : VcBo = 1500V.


    OCR Scan
    PDF EN5290 2SC5296 100ns 2039D 11696YK TA-0585

    2sc5296

    Abstract: transistor 2sc5296 TA-0585
    Text: O rd e rin g n u m b e r :E N 5290 _ 2SC5296 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatu re s • High Speed : 1^-= 100ns typ. • High breakdown voltage : Vcbo = 1500V.


    OCR Scan
    PDF EN5290 2SC5296 100ns 2sc5296 transistor 2sc5296 TA-0585

    GDED417

    Abstract: No abstract text available
    Text: I Ordering num ber: EN 5291 2SC5297 No.5291 NPN Triple Diffused Planar Silicon Transistor SA iYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i F e a tu re s • High S peed: t,. = 100ns typ. • High breakdown voltage : V cbo = 1500V.


    OCR Scan
    PDF 2SC5297 100ns T03PML 11696YK TA-0585 GDED417

    2SC5297

    Abstract: EN5291
    Text: Ordering num ber:EN5291 no.5291 1/ 2SC 5297 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i Features • High Speed : = 100ns typ. • High breakdown voltage : Vcbo= 1500V. • High reliability Adoption of HVP process .


    OCR Scan
    PDF EN5291 2SC5297 100ns 2SC5297 EN5291