Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series H type NRH2410T1R5MN Features Item Summary 1.5 H(±20%), 1550mA, 1160mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2500pcs Products characteristics table External Dimensions
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NRH2410T1R5MN
1550mA,
1160mA
2500pcs
100kHz
1550mA
94MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRH2410T1R5MNV Features Item Summary 1.5 H(±20%), 1550mA, 1160mA Lifecycle Stage
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NRH2410T1R5MNV
1550mA,
1160mA
AEC-Q200
2500pcs
100kHz
1550mA
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Untitled
Abstract: No abstract text available
Text: Using the TPS2511EVM-141 User's Guide Literature Number: SLUU945 June 2012 User's Guide SLUU945 – June 2012 TPS2511EVM-141 USB Dedicated Charging Port Controller and Power Switch Evaluation Module 1 Introduction This user’s guide describes the evaluation module EVM for the TPS2511. TPS2511 is a USB dedicated
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TPS2511EVM-141
SLUU945
TPS2511EVM-141
TPS2511.
TPS2511
TPS2511EVM
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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D0-35
Abstract: u327
Text: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242
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DM1M36SJ6/DM1M32SJ6
1Mbx36/1Mbx32
DM1M36SJ
28-pin
DM2242
DM2252
DM1M32SJ6
DM1M36SJ6
D0-35
u327
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Untitled
Abstract: No abstract text available
Text: Lithium Ion UF484462ST Features & Benefits Specifications • High capacity model High charge voltage • High energy density and voltage • Long, stable power with a flat discharge voltage • Ideal for portable communications, portable computing, and robotics.
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UF484462ST
1660mAh
1710mAh
1160mA,
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Computer Products afc5
Abstract: AFC5-5S15-F AFC5-5D15-F AFC5-12S05-F AFC5-12S12-F AFC5-12S15-F AFC5-5S12-F AFC5-12D12-F AFC5-5S15 AFC5-5S05-F
Text: AFC5-F SERIES SPECIFICATIONS 231-563 231-585 231-608 231-620 231-642 RS Stock Numbers: All specifications are typical at nominal input, nominal output voltage, max. load and 25oC unless otherwise stated. OUTPUT GENERAL 5 Watts Output Power Voltage Accuracy
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500VDC,
20kHz,
Computer Products afc5
AFC5-5S15-F
AFC5-5D15-F
AFC5-12S05-F
AFC5-12S12-F
AFC5-12S15-F
AFC5-5S12-F
AFC5-12D12-F
AFC5-5S15
AFC5-5S05-F
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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CAL03
Abstract: ramtron DM2202J
Text: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer
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DM2M36SJ/DM2M32SJ
2Mbx36/2Mbx32
DM2M36SJ
28pin
DM2202
DM2212
DM2M32SJ
DM2M36SJ
CAL03
ramtron DM2202J
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Untitled
Abstract: No abstract text available
Text: MAX77342 1.6A Adaptive DC-DC Step-Up Converter with High-Side Flash Driver General Description The MAX77342 provides a highly efficient solution for cell phone camera flash applications by integrating a 1.6A PWM DC-DC step-up converter and three programmable
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MAX77342
MAX77342
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Untitled
Abstract: No abstract text available
Text: MAX77342 1.6A Adaptive DC-DC Step-Up Converter with High-Side Flash Driver General Description The MAX77342 provides a highly efficient solution for cell phone camera flash applications by integrating a 1.6A PWM DC-DC step-up converter and three programmable
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MAX77342
MAX77342
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ntc 10K
Abstract: ntc 901 P2610 ntc20 NTC-10k ntc 2,0 VARTA VKB 3.7v 1130MaH PCM 3.7V VARTa c size battery
Text: 4 Adhesive kapton tape Adhesive d/s nomex tape 5 3 PCM PLFE NTC Adhesive d/s nomex tape 6 L - Tag This is a controlled document. Hardcopy to be endorsed by authorised person. Check with Issuing Officer or SAP system for latest update. Specification 1. General:
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R06-1656)
1130mAh
1160mAh
P26-10126
2768-m
ntc 10K
ntc 901
P2610
ntc20
NTC-10k
ntc 2,0
VARTA VKB
3.7v 1130MaH
PCM 3.7V
VARTa c size battery
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Constant Voltage
Abstract: No abstract text available
Text: LED Power Supplies 42W LED Power 42W LXV42 series LED Power Supply Constant Voltage LED Power Supplies LED POWER next generation power source FEATURES • High Efficiency up to 88% • Active PFC (Typical 0.92) • IP66 Waterproof • OVP, SCP,OLP • UL1310 Class 2
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LXV42
UL1310
90-305VAC
UL8750
EN61347-1,
18AWG
Constant Voltage
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Untitled
Abstract: No abstract text available
Text: Enhanced H IV f e m o iy S u t e r n s DM512K64DTBDM512K72DTE Multibank Burst EDOEDRAM 5 12Kb x 64/512Kb x 72 Enhanced DRAM DIMM b e . Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache
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DM512K64DTBDM512K72DTE
/512Kb
168BD5-TR
72-bit
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U716
Abstract: U6915 1178Q
Text: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page
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DM2M36SJ
DM2M32SJ
2Mbx36/2Mbx32
U716
U6915
1178Q
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2mb 72-pin simm
Abstract: 10782
Text: DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM F ^ M T R O N Product Specification Features • 2Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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DM1M36SJ/DM1M32SJ
1Mbx36/1Mbx32
DM2212J-XX,
1M32SJ)
DM1M36SJ
2mb 72-pin simm
10782
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 826ALG063MGBJ RADIAL LEAD ALUMINUM POLYMER CAPACITORS Pans are r o h s compliant ELECTRICAL SPECIFICATIONS Capacitance: 82 uF Tolerance: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C WVDC: 63 Volts DC Temperature Range: -55°C to +125°C
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826ALG063MGBJ
300kHz
1160mA
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Untitled
Abstract: No abstract text available
Text: PART NUMBER: 157ALG063MGBJ RADIAL LEAD ALUMINUM POLYMER CAPACITO RS P a rts a re R oHS c o m p lia n t ELECTRICAL SPECIFICATIONS C apacitance: 150 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.12 Max at 120 Hz and 20°C WVDC: 63 Volts DC T em p e ra tu re Range: -55°C to +125°C
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157ALG063MGBJ
300kHz
1160mA
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Untitled
Abstract: No abstract text available
Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32Enhanced DRAMSIMM r ^ M T R O N Product Specification Features Architecture • 4KByte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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DM2M36SJ/DM2M32SJ
2Mbx36/2Mbx32Enhanced
M2M32SJ)
DM2M36SJ
|
U615
Abstract: DM 0365 R pin EQUIVALENT U716 U1018
Text: DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32EnhancedDRAMSIMM r ^ p M T R O N Features • 4Kbyte SRAM Cache Memory for 15ns Random Reads Within a Page ■ Fast DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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DM2M36SJ/DM2M32SJ
2Mbx36/2Mbx32EnhancedDRAMSIMM
DM2212J-XX,
OM2M32SJ)
DM2M36SJ
U615
DM 0365 R pin EQUIVALENT
U716
U1018
|
A0LA
Abstract: No abstract text available
Text: n E n h a n c e d Memory Systems Inc. DM1M36SJ&DM1M32SJ6Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multi
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
|
Computer Products afc5
Abstract: 05S12F AFC5-05D15-F AFC5-05D12F AFC505D15F AFC5-05S05F AFC5-12S05F AFC5-05D12-F AFC5 computer products AFC505D12F computer products
Text: AFC5-F SERIES Single and Dual Output 5 Watt DC/DC C onverters • • • • • • Linear Regulated Outputs Very Low Output Noise Six-sided metal EMI Shield Small Size - Just 1" x 2" x 0.375" 6 Watts/Cubic Inch 94V-0 Flammablllty Rating The AFC5-F series of single and dual output DC/DC converters
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PDF
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20kHz
UL94V-0
Computer Products afc5
05S12F
AFC5-05D15-F
AFC5-05D12F
AFC505D15F
AFC5-05S05F
AFC5-12S05F
AFC5-05D12-F
AFC5 computer products
AFC505D12F computer products
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vh41
Abstract: u327
Text: DM 1M36SJ & DM 1M32SJ 1Mbx 36/1Mbx 32EnhancedDRAMSIMM A / r ^ M I R O N Features Preliminary Datasheet Architecture m Compatibility with JEDEC • ■ ■ ■ ■ ■ 1M x 36 DRAM SIMM Configuration Allows Performance Upgrades in System Integrated 512 \ 36 SRAM Cache Row Register Allows 15ns
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DM1M36SJ
DM1M32SJ
36/1Mbx
32EnhancedDRAMSIMM
58-Gbyte/sec
1M36SJ
28-Part
vh41
u327
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