Untitled
Abstract: No abstract text available
Text: 3TA0GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA0GK03NB 3TA0GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC
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0GK03NB
0GK04NB
180oC
114oC
50Hz/60Hz,
150mA,
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Untitled
Abstract: No abstract text available
Text: 3TA100GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA100GK03NB 3TA100GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC
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3TA100GKxxNB
3TA100GK03NB
3TA100GK04NB
180oC
114oC
50Hz/60Hz,
150mA,
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3TA100GK03NB
Abstract: 3TA100GK04NB half bridge
Text: 3TA100GKxxNB Three Phase Half Bridge Dimensions in mm 1mm = 0.0394" Type 3TA100GK03NB 3TA100GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC 1/2cycle, 50Hz/60Hz, peak value, non-repetitive
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3TA100GKxxNB
3TA100GK03NB
3TA100GK04NB
180oC
114oC
50Hz/60Hz,
200mA,
150oC,
3TA100GK03NB
3TA100GK04NB
half bridge
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CDFP4-F16
Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
Text: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)
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HCTS193MS
-55oC
125oC
05A/cm2
HCTS193
TA14451A.
CDFP4-F16
HCTS193DMSR
HCTS193HMSR
HCTS193KMSR
HCTS193MS
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HCS109MS
Abstract: CDFP4-F16 HCS109DMSR HCS109HMSR HCS109KMSR HCS109
Text: HCS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCS109MS
MIL-STD-1835
CDIP2-T16,
05A/cm2
HCS109
TA14340A.
HCS109MS
CDFP4-F16
HCS109DMSR
HCS109HMSR
HCS109KMSR
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CDFP4-F16
Abstract: HCS193DMSR HCS193HMSR HCS193KMSR HCS193MS
Text: HCS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)
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HCS193MS
MIL-STD-1835
CDIP2-T16,
-55oC
125oC
05A/cm2
CDFP4-F16
HCS193DMSR
HCS193HMSR
HCS193KMSR
HCS193MS
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CDFP4-F16
Abstract: HCTS161ADMSR HCTS161AHMSR HCTS161AKMSR HCTS161AMS
Text: HCTS161AMS Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • Minimum LET for SEU Upsets: >100 MEV-cm2/mg
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HCTS161AMS
MIL-STD-1835
CDIP2-T16,
-55oC
125oC
104mils
05A/cm2
HCTS161A
CDFP4-F16
HCTS161ADMSR
HCTS161AHMSR
HCTS161AKMSR
HCTS161AMS
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Untitled
Abstract: No abstract text available
Text: HCTS390MS Semiconductor Radiation Hardened Dual Decade Ripple Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)
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HCTS390MS
MIL-STD-1835
CDIP2-T16
-55oC
125oC
HCTS390MS
05A/cm2
HCTS390
TA14489A.
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TA143
Abstract: CDFP4-F16 HCS195DMSR HCS195HMSR HCS195KMSR HCS195MS
Text: HCS195MS Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW
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HCS195MS
MIL-STD-1835
CDIP2-T16,
410mm
05A/cm2
HCS195
TA14387A.
TA143
CDFP4-F16
HCS195DMSR
HCS195HMSR
HCS195KMSR
HCS195MS
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
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DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
DIODE S4 75a
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Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6435DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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Untitled
Abstract: No abstract text available
Text: 3TA250GKxxNB Three Phase Thyristor Module Half Bridge K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA250GK03NB 3TA250GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions
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3TA250GKxxNB
3TA250GK03NB
3TA250GK04NB
180oC
114oC
50Hz/60Hz,
150mA,
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CDFP4-F16
Abstract: HCTS147DMSR HCTS147HMSR HCTS147KMSR HCTS147MS
Text: HCTS147MS Radiation Hardened 10-to-4 Line Priority Encoder September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS147MS
10-to-4
MIL-STD-1835
CDIP2-T16
CDFP4-F16
HCTS147DMSR
HCTS147HMSR
HCTS147KMSR
HCTS147MS
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HX8340B
Abstract: HX8340-B mx 362-0
Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver
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HX8340-B
176RGB
224October,
225October,
HX8340B
mx 362-0
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CDFP4-F16
Abstract: HCS165DMSR HCS165HMSR HCS165KMSR HCS165MS D6512
Text: HCS165MS Radiation Hardened Inverting 8-Bit Parallel-Input/Serial Output Shift Register September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW
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HCS165MS
MIL-STD-1835
CDIP2-T16,
05A/cm2
HCS165
TA14385A.
CDFP4-F16
HCS165DMSR
HCS165HMSR
HCS165KMSR
HCS165MS
D6512
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CDFP4-F16
Abstract: HCS161 HCS161DMSR HCS161HMSR HCS161KMSR HCS161MS
Text: HCS161MS Radiation Hardened Synchronous Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCS161MS
MIL-STD-1835
CDIP2-T16
-55oC
125oC
2190mm
05A/cm2
HCS161
CDFP4-F16
HCS161DMSR
HCS161HMSR
HCS161KMSR
HCS161MS
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CDFP4-F16
Abstract: HCTS139DMSR HCTS139HMSR HCTS139KMSR HCTS139MS
Text: HCTS139MS Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si)
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HCTS139MS
MIL-STD-1835
CDIP2-T16
125oC
20ns8606
05A/cm2
HCTS139
TA14409.
CDFP4-F16
HCTS139DMSR
HCTS139HMSR
HCTS139KMSR
HCTS139MS
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Truth Table 74161
Abstract: IC 74160 74161 pin diagram and truth table bcd 74160 IC 74161 HCTS160HMSR HCTS160KMSR HCTS160MS CDFP4-F16 HCTS160DMSR
Text: HCTS160MS Radiation Hardened Synchronous Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
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HCTS160MS
-55oC
125oC
05A/cm2
HCTS160
TA14445A.
Truth Table 74161
IC 74160
74161 pin diagram and truth table
bcd 74160
IC 74161
HCTS160HMSR
HCTS160KMSR
HCTS160MS
CDFP4-F16
HCTS160DMSR
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CDFP4-F16
Abstract: HCTS193DMSR HCTS193HMSR HCTS193KMSR HCTS193MS
Text: HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ)
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HCTS193MS
-55oC
125oC
05A/cm2
HCTS193
TA14451A.
CDFP4-F16
HCTS193DMSR
HCTS193HMSR
HCTS193KMSR
HCTS193MS
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CDFP4-F16
Abstract: HCS151DMSR HCS151HMSR HCS151KMSR HCS151MS
Text: HCS151MS Radiation Hardened 8-Input Multiplexer September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCS151MS
MIL-STD-1835
CDIP2-T16
-55oC
125oC
05A/cm2
HCTS151
TA14467A.
CDFP4-F16
HCS151DMSR
HCS151HMSR
HCS151KMSR
HCS151MS
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CDFP4-F16
Abstract: HCTS109DMSR HCTS109HMSR HCTS109KMSR HCTS109MS
Text: HCTS109MS Radiation Hardened Dual JK Flip Flop September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg
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HCTS109MS
MIL-STD-1835
CDIP2-T16,
125oC
CDFP4-F16
HCTS109DMSR
HCTS109HMSR
HCTS109KMSR
HCTS109MS
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Untitled
Abstract: No abstract text available
Text: Data Sheet February 1, 2012 EVW010A0B Series Eighth-Brick DC-DC Converter Power Modules 36–75Vdc Input; 12.0Vdc Output; 10A Output Current Features RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC • Compatible in a Pb-free or SnPb reflow
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EVW010A0B
75Vdc
2002/95/EC
prote44-WATT
DS09-006
evw010
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