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    1129 TRANSISTORS Search Results

    1129 TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1129 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2478

    Abstract: D426 2SB1616 b426 2SB1616 equivalent SPEC-B426
    Text: Transistors 2SB1616 2SD2478 SPEC-B426 (94L-1129-D426) 301


    Original     		PDF 2SB1616 2SD2478 SPEC-B426) 94L-1129-D426) 2SD2478 D426 2SB1616 b426 2SB1616 equivalent SPEC-B426

    phemt biasing ATF-36077

    Abstract: D5880 AN-G004 microstripline ATF-10136 ATF-36077 low noise design ATF 10136 agilent atf10136 ATF13284 ATF36077
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Agilent Technologies ATF36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in 12 GHz DBS


    Original     		PDF ATF-36077 ATF36077 ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 D5880 AN-G004 microstripline ATF-10136 low noise design ATF 10136 agilent atf10136 ATF13284

    phemt biasing ATF-36077

    Abstract: ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band ATF-36077 low noise design ATF 10136
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction The Hewlett-Packard ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF-36077 is characterized for use as a low noise amplifier in


    Original     		PDF ATF-36077 AN-G004, ATF-10136, ATF13284, 5091-9311E 5964-3854E 5966-0782E phemt biasing ATF-36077 ATF-13284 5964-3854E D5880 amplifier lna low noise amplifier s-band low noise design ATF 10136

    phemt biasing ATF-36077

    Abstract: atf-36077 low noise design ATF 10136 microstripline ATF-10136 ATF36077 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band
    Text: Low Noise Amplifier for 2.3 GHz using the ATF-36077 Low Noise PHEMT Application Note 1129 Introduction Design The Avago Technologies ATF-36077 PHEMT device is described in a low noise amplifier for 2.3 GHz. The ATF36077 is characterized for use as a low noise amplifier in


    Original     		PDF ATF-36077 ATF36077 AN-G004, ATF-10136, ATF-13284, 5091-9311E 59643854E 5966-0782E phemt biasing ATF-36077 low noise design ATF 10136 microstripline ATF-10136 thickness of microstripline AN-G004 D5880 amplifier lna low noise amplifier s-band

    MAX34405

    Abstract: ds1347 JESD22-C101 DALLAS DS80C320 maxim integrated date Code
    Text: 11/18/2011 PRODUCT RELIABILITY REPORT FOR DS1347 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email: don.lipps@maxim-ic.com


    Original     		PDF DS1347 com/TechSup000 DS80C320 WK049844A DS1341 WD048116A WK049846A MAX34405 MAX34405 ds1347 JESD22-C101 DALLAS DS80C320 maxim integrated date Code

    MAX72408

    Abstract: MAXQ6831 MAXQ3103
    Text: 10/31/2011 PRODUCT RELIABILITY REPORT FOR MAX31782 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF MAX31782 DS28E500 QD112114B MAXQ6831 ZN112250BC MAXQ618 ZJ112624AD MAXQ1740 ZJ112746BA MAX72408 MAXQ6831 MAXQ3103

    MAXQ10

    Abstract: MAXQ3103 MAX34441
    Text: 10/31/2011 PRODUCT RELIABILITY REPORT FOR MAX34441 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF MAX34441 DS28E500 QD112114B MAXQ6831 ZN112250BC MAXQ618 ZJ112624AD MAXQ1740 ZJ112746BA MAXQ10 MAXQ3103 MAX34441

    MAX72408

    Abstract: DS34T101 MAXQ68 DS34S132 MAXQ3103 MAX31785
    Text: 10/31/2011 PRODUCT RELIABILITY REPORT FOR MAX31785 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF MAX31785 DS28E500 QD112114B MAXQ6831 ZN112250BC MAXQ618 ZJ112624AD MAXQ1740 ZJ112746BA MAX72408 DS34T101 MAXQ68 DS34S132 MAXQ3103 MAX31785

    MAX72408

    Abstract: TSMC 0.18um TSMC 0.18um Process parameters passivation DS33R41 DS28E500
    Text: 10/31/2011 PRODUCT RELIABILITY REPORT FOR MAX34446 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF MAX34446 DS28E500 QD112114B MAXQ6831 ZN112250BC MAXQ618 ZJ112624AD MAXQ1740 ZJ112746BA MAX72408 TSMC 0.18um TSMC 0.18um Process parameters passivation DS33R41 DS28E500

    MAX72408

    Abstract: DS28E500 TSMC 0.18um MAXQ6831 QD101882B MAXQ1050 tsmc Activation Energy DS33R41 TSMC 0.18um Process parameters passivation
    Text: 10/31/2011 PRODUCT RELIABILITY REPORT FOR MAX34440 Maxim Integrated Products 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Manager, Reliability Engineering Maxim Integrated Products 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF MAX34440 DS28E500 QD112114B MAXQ6831 ZN112250BC MAXQ618 ZJ112624AD MAXQ1740 ZJ112746BA MAX72408 DS28E500 TSMC 0.18um MAXQ6831 QD101882B MAXQ1050 tsmc Activation Energy DS33R41 TSMC 0.18um Process parameters passivation

    IGBTs Transistors

    Abstract: No abstract text available
    Text: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Dimensions in mm _ , Package outlines 9 10.2 max 5.7 max N et Mass: 2 g


    OCR Scan     		PDF OT186 OT186A OT223 OT263 OT263-01 OT404 OT426 T0220AB OT186; IGBTs Transistors

    MQ1129

    Abstract: MD-1129 MD1123 MD1129 MD1129F MD1130 MD1130F
    Text: MDI 129 s'ucon MDI 129F MQ1129 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation ap­ plications. • Excellent Temperature Tracking — MD1129.F


    OCR Scan     		PDF MD1129 MD1129F MQ1129 MD1129 10/iAdc MD1129, MD1129F) 100MAdc, MQ1129 MD-1129 MD1123 MD1130 MD1130F

    UL-94VO

    Abstract: IGBTs Transistors UL94
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Package outlines Dimensions in mm Net Mass: 2 g top view SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent


    OCR Scan     		PDF OT186; OT186A; OT426 T0220AB; T0220 UL-94VO IGBTs Transistors UL94

    6CW 73

    Abstract: 6CW pNP 6CW NPN marking 6cw sot-23
    Text: SIEMENS PNP Silicon AF Transistors • • • • BCW 67 BCW 68 For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW 65, BCW 66 NPN Type Marking Ordering Code (tape and reel) PinC¡onfiguration


    OCR Scan     		PDF Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555 OT-23 D12GT72 Co/68 53Sb05 6CW 73 6CW pNP 6CW NPN marking 6cw sot-23

    52426

    Abstract: No abstract text available
    Text: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M


    OCR Scan     		PDF TN0601L, VN0606L/M, VN66AFD TN0601L VN0606L VN0606M VN66AFD O-237 O-226AA, O-237) 52426

    Untitled

    Abstract: No abstract text available
    Text: r r : 2 N 60 32 s g s -th o m s o n G p o p @ B iö F i@ lo e i_ 2 N 6 0 3 3 S 6 S-TH0MS0N 30E D HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS DESCRIPTION Th e 2N 6 0 3 2 and 2N 6 0 3 3 are silicon multiepitaxial planar N P N transistors in modified J e d e c T O -3 m e­


    OCR Scan     		PDF G-2701 2N6032-2N6033 hFEB10

    VN2410M

    Abstract: No abstract text available
    Text: Tem ic suiconix TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOS Transistors TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M Product Summary Part Num ber VGS th (V) I d (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ V GS = 10V 0.8 to 2 1.12 VN2406L


    OCR Scan     		PDF TN2410L, VN2406/2410 TN2410L VN2406D VN2406L VN2406M VN2410L VN2410M VN2410M

    2SC1123

    Abstract: 138D
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF

    KIY transistor

    Abstract: 2sc2635 2SC2607 KIY transistors TBB 324 2sc2592 138B 2SA1103 2SC2590 2SC2591
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SC2361 2SC2632 2SC2633 2SC2635 2SC1788 KIY transistor 2SC2607 KIY transistors TBB 324 2sc2592 138B 2SA1103 2SC2590 2SC2591

    RFH75N05, RFA100N05

    Abstract: RFH75N05 RFA100N05 AN-7260 an7254 AN7260 rca application notes ISD 100 h75n05cf5
    Text: Preview Products RFH75N05, RFA100N05 File Number 2275 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 75 A and 100 A, 50 V N -CH A N N EL E N H A N C E M EN T MODE fosfori) = 0 .0 1 0 O Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF RFH75N05, RFA100N05 RFH75N05 RFA100N05 RFH75N05. AN-7254 AN-7260. RFA100N05. RFH75N05, RFA100N05 AN-7260 an7254 AN7260 rca application notes ISD 100 h75n05cf5

    D41E7

    Abstract: D41 k e7 tab ic D40E D41E D41E1 D41E5
    Text: Silicon Power Tab S Transistors i s i S D41E “ COLOR MOLDED” T h e G e n e ra l E le c t ric D 4 1 E is a b la ck , silicon e p la s t i c e n c a p s u l a t e d , p o w e r tra n s isto r d e s ig n e d for v a rio u s sp ec ific a n d g e n e r a l p u r p o s e a p p l ic a t i o n s , s u c h a s: o u t p u t a n d


    OCR Scan     		PDF 23N0TE2 D41E7 D41 k e7 tab ic D40E D41E D41E1 D41E5

    BUW64C

    Abstract: BUW64A buw64b TRANSISTOR CA3725 BUW64B W64A BUW64
    Text: 01 3875081 G E SOLID DE Jj 3 f l 7 S 0 û l STATE DD17Sf lb S u T'53'/ 01E 17586 i |~ Pro Electron Power Transistors File Number 1199 BUW64A, BUW64B, BUW64C High-Current, Silicon N-P-N VERSAWATT Transistors Switching Applications T E R M IN A L D E SIG N ATIO N S


    OCR Scan     		PDF DD17Sflb BUW64A, BUW64B, BUW64C 92GS-39969 O-22QAB RCA-BUW64A, BUW64C BUW64Ã BUW64A buw64b TRANSISTOR CA3725 BUW64B W64A BUW64

    115410

    Abstract: IRCZ44 IRCZ44-008 hexsense 033s 10745 IRCZ44-007
    Text: he d | Mas s 4s a OGaa^M h | Provisional Data Sheet No. PD-9.529 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER T-39-11 REPETITIVE AVALANCHE AN D dv/dt RATED LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense — Current; Sense IRCZ44


    OCR Scan     		PDF qas54sa T-39-11 O-220 flyback010165) T0-220 IRCZ44 IRCZ44-007 IRCZ44-008 115410 hexsense 033s 10745

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737