Laser diode Fabry-Perot
Abstract: laser diode lifetime TEM00 ridge waveguide semiconductor laser
Text: 0.90 04.01.2008 page: 1 from 4 BAL DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER GaAs Semiconductor Laser Diode Fabry-Perot Laser RWE/RWL PRELIMINARY SPECIFICATION RW Laser EYP-RWL-1120-00050-1300-SOT02-0000 General Product Information Product Application 1120 nm Fabry-Perot Laser
|
Original
|
EYP-RWL-1120-00050-1300-SOT02-0000
Laser diode Fabry-Perot
laser diode lifetime
TEM00
ridge waveguide semiconductor laser
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: October 31, 2008 October 31, 2008 Analog Semiconductor Products DCS/PCN-1120 Alert Type: PCN #: New manufacturing location PCN #: 1120 TITLE New assembly manufacturing location for SOT23-6 Unisem
|
Original
|
DCS/PCN-1120
OT23-6
OT23-6
ZXSC400E6TA
ZXSC410E6TA
ZXSC420E6TA
PCN-1120
|
PDF
|
single phase inverter IGBT application schematic
Abstract: grundfos up 15 50 grundfos IGBT DRIVER SCHEMATIC 3 PHASE 3 phase IGBT gate driver Grundfos up Grundfos ups IR2x38 IR2x14 3 phase inverter simulation diagram
Text: Application Note AN-1120 Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications By Marco Palma - International Rectifier Niels H. Petersen - Grundfos Table of Contents Page Introduction .2
|
Original
|
AN-1120
IR2x14
IR2x38
single phase inverter IGBT application schematic
grundfos up 15 50
grundfos
IGBT DRIVER SCHEMATIC 3 PHASE
3 phase IGBT gate driver
Grundfos up
Grundfos ups
3 phase inverter simulation diagram
|
PDF
|
SFH 309 FA
Abstract: SFH 309-3/4
Text: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 309, SFH 309 FA SFH 309 SFH 309 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 380 nm . 1180 nm SFH 309 , 880 nm.1120 nm (SFH 309 FA) • • • •
|
Original
|
D-93055
SFH 309 FA
SFH 309-3/4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GF6968AD N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.2A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag
|
Original
|
GF6968AD
|
PDF
|
GF6968AD
Abstract: No abstract text available
Text: GF6968AD N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.0A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag
|
Original
|
GF6968AD
CECC802/Reflow
GF6968AD
|
PDF
|
GF9926D
Abstract: No abstract text available
Text: GF9926D N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.0A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag
|
Original
|
GF9926D
CECC802/Reflow
GF9926D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-1120; Rev 0; 9/96 ±1 5 k V ESD-Prot e c t e d, EM C-Com plia nt , 2 3 0 k bps, 3 -T x /3 -Rx RS-2 3 2 I C The MAX1406 is an RS-232 IC designed to meet the stringent electrostatic discharge ESD requirements of the European community. All transmitter outputs and
|
Original
|
MAX1406
RS-232
IEC1000-4-2
230kbps,
1-0042A
|
PDF
|
Q62703Q6401
Abstract: No abstract text available
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES RADIALE LED RADIAL LED Package Type Emissionsfarbe Emission color λdom typ. Gehäusefarbe Emission Color Hyper 5 mm LED LY 5466-PR LY 5466-Q LY 5466-R LY 5466-QS ΦV [mlm] IV [mcd] [nm] at 2ϕ (typ.) Bestellnummer
|
Original
|
5466-PR
5466-Q
5466-R
5466-QS
Q62703-Q3608
Q62703-Q3610
Q62703-Q3611
Q62703-Q3609
Q62703-Q6258
Q62703-Q6255
Q62703Q6401
|
PDF
|
Q62901B0065
Abstract: Q62902B0152F222 Q62902B0156F222 A671 transistor lrtbg6sg Q65110A4187 osram LW Y3SG OSRAM Q62902B0152F222 Q65110A1890 Q62901B0062
Text: kakakak Light Emitting Diodes Lumineszenzdioden 75 Light Emitting Diodes .Lumineszenzdioden . 75 Safety Instructions .
|
Original
|
|
PDF
|
lg led tv electronic diagram
Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Text: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .
|
Original
|
|
PDF
|
Q65110A2437
Abstract: A671 transistor Q62902B0156F222 Q65110A1890 transistor a673 led verde 5mm Q62901B0062 A673 transistor LS M67K-J2L1-1 Q62902B0152F222
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES Sicherheitshinweise Safety Instructions OSRAM LEDs erreichen aufgrund von neuen Chip-Technologien immer höhere optische Leistungen. Wir empfehlen daher, schon bei der Entwicklung von Geräten, die zu
|
Original
|
|
PDF
|
LW T67C-S2U1-35
Abstract: T676-P1Q1-1 Q62703-Q6301 LO T676-Q2R2-24 Q62703Q4895 LA T676-Q1R2 Q62703-Q5026 Q62703-Q6349 Q62703Q4976 E675-U1V2-26-1
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED SMT-LED Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche Color of light emitting area Hyper TOPLED ΦV [mlm] IV [mcd] at IF 2ϕ (typ.) Bestellnummer (50% IV) Ordering code
|
Original
|
T676-P1Q1-1
T676-Q1R2-1
T676-Q1R1-1
T676-R1S2-1
T676-Q2R2-24
T676-R2S2-24
T676-Q1R1-26
T676-R1S2-26
LW T67C-S2U1-35
Q62703-Q6301
LO T676-Q2R2-24
Q62703Q4895
LA T676-Q1R2
Q62703-Q5026
Q62703-Q6349
Q62703Q4976
E675-U1V2-26-1
|
PDF
|
5469-H
Abstract: LT 5351 Q65110A0266
Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES RADIALE LED RADIAL LED Package Type Emissionsfarbe Emission color λdom typ. Gehäusefarbe Emission Color ΦV [mlm] IV [mcd] [nm] Oval LEDs at 2ϕ (typ.) Bestellnummer (50% IV) Ordering code Fig. IF [mA] [deg]. Oval LEDs
|
Original
|
O28B-T1U1-34
O28B-U1V2-34
O38B-T1U1-34
O38B-U1V2-34
O28C-Q1R1-35
O28C-R1S2-35
O38C-T2U2-35
O38C-U2AA-35
O285-S2T2-46
5469-H
LT 5351
Q65110A0266
|
PDF
|
|
|
3fx transistor
Abstract: ha 1406 ha c 1406 ha
Text: 19-1120; Rev0; 9/96 ± 1 5 k V ESD-Protected9 EM C-Com pliant, 230kbps, 3-Tx/3-R x R S -2 3 2 1C .Applications Telecommunications Modems Printers .Features ♦ Enhanced ESD Protection: ±15kV Human Body Model ±8kV IEC1000-4-2, Contact Discharge ±15kV IEC1000-4-2, Air-Gap Discharge
|
OCR Scan
|
230kbps
MAX1406
RS-232
IEC1000-4-2
230kbps,
3fx transistor
ha 1406 ha
c 1406 ha
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M TD 1120 • f f i M/ Features • a "J t f OFF S till HD • 4 f@ A t i • 7 7 - i ^ - i — I \ s 9 - O r — Kl*l/St (|h|0# ON l#j±4§#l§) ■ Constant-Current Chopping Function (Fixed OFF Time) • 4-Phase Input (Sim ultaneous ON Prevention Function)
|
OCR Scan
|
U055-8)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Section 6: SEMITRANS IGBT Modules; New Range 1995/96 3rd Version: Low Inductance, lower VcEsat. soft and fast CAL diodes" Preliminary Data _ _ Type VcES FW lc ^VcEsat P,0f @ @ @ lc 25X Tease IG B T W X /W Tease =25 C RtrvCH d u r in g 1995 V A V C ir c u it
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8573FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8573FN High-Frequency Modulation 1C for Laser Diode The TA8573FN is a high frequency modulation 1C for laser diode. This product is designed for PUH Pick Up Head of optical disc drive.
|
OCR Scan
|
TA8573FN
TA8573FN
150MHz
400MHz.
50mAp-p.
30mAp-p.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 3FWJ42N TOSHIBA SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE 3FWJ42N HIGH SPEED RECTIFIER APPLICATIONS • Average Forward Current : Ijr A V = 3-0A • Low Forward Voltage : Vf M~ 0.37V (Max.) • Repetitive Peak Reverse Voltage : Vrrm = 30V
|
OCR Scan
|
3FWJ42N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 10FWJ2C48M#U 10FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10FWJ2C48M, U10FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Peak Forward Voltage
|
OCR Scan
|
10FWJ2C48M
10FWJ2C48M
10FWJ2C48M,
U10FWJ2C48M
12-10D1A
12-10D20FWJ2C48M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA 30FWJ2C48M,U30FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2C48M, U30FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage
|
OCR Scan
|
30FWJ2C48M
U30FWJ2C48M
30FWJ2C48M,
30FWJ2C48M
U30FW
J2C48M
12-10D1A
12-10D2A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HTXYS Advanced Data ^ • 1liv I u DSI 45 VRRM = 800 -1600 V Rectifier Diode 'f.'A V .M = 48 A TO-247 1300 1700 1200 1600 c DSI 45-12A DSI 45-16A A A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions ^F AV M Tc ^FSM l2t Maximum Ratings = 105°C; 180° sine
|
OCR Scan
|
O-247
5-12A
5-16A
|
PDF
|
42r2
Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Text: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)
|
OCR Scan
|
200A2s
CB-33)
100A2s
CB-227)
TNF300
42r2
RC snubber circuit
BYW 62
Thomson-CSF 22R2
RP 8040 X
ku1010
BYW88-600
BYW88-800
RP4040
g4010
|
PDF
|
DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
|
OCR Scan
|
1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
|
PDF
|
