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    112 TRANSISTOR Search Results

    112 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation

    112 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-C2254

    Abstract: No abstract text available
    Text: BCR 112 NPN Silicon Digital Transistor • Switching circuit, inverter, inferface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 112 WFs 1=B Q62702-C2254 Package 2=E 3=C SOT-23 Maximum Ratings


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    Q62702-C2254 OT-23 Nov-26-1996 Q62702-C2254 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCR 112 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 112 WFs Pin Configuration 1=B 2=E Package


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    VPS05161 EHA07184 OT-23 Oct-19-1999 PDF

    TIP110 equivalent

    Abstract: TIP111
    Text: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4v, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use 1


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    TIP110/111/112 TIP115/116/117 O-220 TIP110 TIP111 TIP112 TIP110 equivalent TIP111 PDF

    Nichicon py series

    Abstract: nichicon pY nichicon pw MTD60N06HD transistor AL100 Ridley Engineering POWER456 boost ridley Roland e 5 schematic MTD60N06
    Text: AND8035/D CS51227 in a 112 W Boost Converter Application Prepared by: Roland Saint–Pierre Field Application Engineer http://onsemi.com APPLICATION NOTE • • • • • INTRODUCTION This design note describes the design and operating characteristics of a 112 W Boost Converter based on the


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    AND8035/D CS51227 r14525 Nichicon py series nichicon pY nichicon pw MTD60N06HD transistor AL100 Ridley Engineering POWER456 boost ridley Roland e 5 schematic MTD60N06 PDF

    Hitachi DSA002714

    Abstract: KSD1 160 ksd 180 transistor 115 46F
    Text: HD66728 112 x 80-dot Graphics LCD Controller/Driver Preliminary Rev 0.5 April 23, 1998 Description The HD66728, 112-by-80 dot-matrix graphics LCD controller and driver LSI, displays characters such as alphanumerics, katakana, hiragana and symbols as well as graphics such as kanji and pictograms. It can be


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    HD66728 80-dot HD66728, 112-by-80 HD66728 80-system Hitachi DSA002714 KSD1 160 ksd 180 transistor 115 46F PDF

    transistor KSB 340

    Abstract: transistor horizontal c 5936 KSD 302 KSD 303 KSD1 165 3543 amplifier 3727 024 CR 5*7 led dot matrix display 2758 eprom H8/325
    Text: HD66728 112 x 80-dot Graphics LCD Controller/Driver ADE-207-312(Z) Rev 1.0 Dec 3rd, 1998 Description The HD66728, 112-by-80 dot-matrix graphics LCD controller and driver LSI, displays characters such as alphanumerics, katakana, hiragana and symbols as well as graphics such as kanji and pictograms. It can be


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    HD66728 80-dot ADE-207-312 HD66728, 112-by-80 HD66728 transistor KSB 340 transistor horizontal c 5936 KSD 302 KSD 303 KSD1 165 3543 amplifier 3727 024 CR 5*7 led dot matrix display 2758 eprom H8/325 PDF

    soh dl6

    Abstract: Hitachi DSA0087 resistor CMS CODE HCD66740BP HCD66740WBP HD66725 HD66728 HD66740 HD66740TB0 HD66740WTB0
    Text: HD66740 112 x 80-dot Graphics LCD Controller/Driver ADE-207-334(Z) Rev 1.0 April, 2001 Description The HD66740, 112-by-80 dot-matrix graphics LCD controller and driver LSI, displays graphics such as text, kanji and pictograms. It can be configured to drive a dot-matrix liquid crystal under the control of the


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    HD66740 80-dot ADE-207-334 HD66740, 112-by-80 HD66740 soh dl6 Hitachi DSA0087 resistor CMS CODE HCD66740BP HCD66740WBP HD66725 HD66728 HD66740TB0 HD66740WTB0 PDF

    transistor horizontal c 5936

    Abstract: ksd 180 KS 2152 transistor 6r 227 scr tic 1060 transistor KSB 340 Hitachi DSA002732 416 SP 1E4 KSD1 165 STR 6603
    Text: HD66728 112 x 80-dot Graphics LCD Controller/Driver Rev 1.0 January 14, 1999 Description The HD66728, 112-by- 80 dot-matrix gra phics LC D contr olle r and drive r LS I, displa ys cha ra cter s such as alphanumerics, katakana, hiragana and symbols as well as graphics such as kanji and pictograms.


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    HD66728 80-dot HD66728, 112-by- HD66728 transistor horizontal c 5936 ksd 180 KS 2152 transistor 6r 227 scr tic 1060 transistor KSB 340 Hitachi DSA002732 416 SP 1E4 KSD1 165 STR 6603 PDF

    morocco tip112

    Abstract: tip110 st TIP112 TIP110 TIP117 TIP115 NPN Darlington IC schematic ST TIP110
    Text: TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS


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    TIP110/112 TIP115/117 O-220 TIP110 TIP112 O-220 TIP115 TIP117. morocco tip112 tip110 st TIP112 TIP110 TIP117 NPN Darlington IC schematic ST TIP110 PDF

    TIP115

    Abstract: TIP117 TIP116 TIP-115 pnp Darlington Darlington high voltage pnp darlington
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP115/116/117 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP110/111/112 APPLICATIONS


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    TIP115/116/117 O-220C TIP110/111/112 TIP115 TIP116 TIP117 TIP115 TIP117 TIP116 TIP-115 pnp Darlington Darlington high voltage pnp darlington PDF

    TIP115

    Abstract: TIP-115 ic darlington PNP 100V 2A TIP116 TIP117
    Text: Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP115/116/117 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP110/111/112 APPLICATIONS


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    TIP115/116/117 O-220C TIP110/111/112 TIP115 TIP116 TIP117 TIP115 TIP-115 ic darlington PNP 100V 2A TIP116 TIP117 PDF

    TIP110

    Abstract: npn darlington TIP110/111/112 NPN POWER DARLINGTON TIP111 TIP112
    Text: Inchange Semiconductor Product Specification TIP110/111/112 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP115/116/117 APPLICATIONS


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    TIP110/111/112 O-220C TIP115/116/117 TIP110 TIP111 TIP112 UTIP111 TIP110 npn darlington TIP110/111/112 NPN POWER DARLINGTON TIP111 TIP112 PDF

    TIP110

    Abstract: TIP112 TIP111 npn darlington TIP110/111/112 NPN POWER DARLINGTON TRANSISTORS darlington npn 1a
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP110/111/112 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP115/116/117 APPLICATIONS


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    TIP110/111/112 O-220C TIP115/116/117 TIP110 TIP111 TIP112 TIP110 TIP112 TIP111 npn darlington TIP110/111/112 NPN POWER DARLINGTON TRANSISTORS darlington npn 1a PDF

    TIP112

    Abstract: TIP117 TIP110 TIP115 ST Microelectronics Transistors 117 IC tip110 st morocco tip112
    Text: TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL


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    TIP110/112 TIP115/117 TIP110 TIP112 O-220 TIP115 TIP117. O-220 TIP117 ST Microelectronics Transistors 117 IC tip110 st morocco tip112 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW9187 Gallium Arsenide CATV Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • GaAs FET Transistor Technology


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    MHW9187N. MHW9187 MHW9187 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW9189A LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MHW9189A MHW9189A PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHW10236N Rev. 0, 11/2006 Freescale Semiconductor Technical Data MHW10236N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology


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    MHW10236N PDF

    1.5SMC27AT3G

    Abstract: No abstract text available
    Text: Document Number: MMG1001NT1 Rev. 8, 3/2007 Freescale Semiconductor Technical Data Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MMG1001NT1 DataMMG1001NT1 1.5SMC27AT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHW9236N Rev. 6, 4/2006 Freescale Semiconductor Technical Data MHW9236N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Integrated ESD Protection Diodes • GaAs FET Transistor Technology


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    MHW9236N MHW9236. PDF

    bar code phototransistor

    Abstract: DG-112
    Text: Photointerrupters Reflective KODENSHI DG-112 DIMENSIONS (Unit : mm) The DG–112 carrying a unique hysteresis transistor (BAMBIT)developed by KODENSHI CORP. facililates digital output by means of two leads. FEATURES •DIGITAL OUTPUT:directly connect to a microcomputer


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    DG-112 bar code phototransistor DG-112 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHW9146N Rev. 4, 5/2006 Freescale Semiconductor Technical Data MHW9146N Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MHW9146N PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MHW9186AN Rev. 3, 5/2006 Freescale Semiconductor Technical Data MHW9186AN Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MHW9186AN PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MHW9186 Gallium Arsenide CATV Amplifier Module LIFETIME BUY Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


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    MHW9186N. MHW9186 MHW9186 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si SGS-THOMSON HDoœiiLKerasiiüiDes TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


    OCR Scan
    TIP110/112 TIP115/117 TIP110 TIP115 TIP117. PDF