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    1118 R TRANSISTOR Search Results

    1118 R TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1118 R TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UNR1111

    Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112

    1117 S Transistor

    Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115

    UN1114

    Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●


    Original     		PDF 111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118

    1117 S Transistor

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119

    IR331x

    Abstract: mosfet short circuit protection schematic diagram IR3313 "battery protection" AN-1118 IR3310 current sensing DC motor schematic diagram
    Text: Application Note AN- 1118 IR331x : Current Sensing High Side Switch – P3 By David Jacquinod Table of Contents Page Introduction. 2 Inner Architecture . 2


    Original     		PDF IR331x IR3310 IR331X mosfet short circuit protection schematic diagram IR3313 "battery protection" AN-1118 IR3310 current sensing DC motor schematic diagram

    2160 transistor

    Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
    Text: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order


    Original     		PDF GSP7427-89 GSP7427-89 100MHz 150mA 2160 transistor GSP7427 RO4003 C 2120 Y unmatched bare amplifier W-335 L381

    OS-68338

    Abstract: HT-67849 MIL-PRF-55310 5th class 2012 date sheet 5th class 2012 date sheet for 5th class 2012 MIL-STD-1686 manufacturer list cots radiation Vectron 1108 pmp 5.24
    Text: REV G DESCRIPTION 05-0727: add 1118 Series and Appendix A DATE 4/7/05 PREP SC APPD SC EXAMPLES SHOWN IN ACTUAL SIZE VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY


    Original     		PDF OS-68338 100krad OS-68338 HT-67849 MIL-PRF-55310 5th class 2012 date sheet 5th class 2012 date sheet for 5th class 2012 MIL-STD-1686 manufacturer list cots radiation Vectron 1108 pmp 5.24

    GR-51681

    Abstract: Vectron 1108 QSP-90100 VL-65339 HT-67849 OS-68338
    Text: REV I DESCRIPTION DATE 2/22/07 07-0692 PREP RS APPD DF VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard ENGINEERING S. Carpenter 10/30/00


    Original     		PDF OS-68338 GR-51681 Vectron 1108 QSP-90100 VL-65339 HT-67849 OS-68338

    OS-68338

    Abstract: MIL-STD-1686 MIL-PRF-55310 f1500g
    Text: REV L DESCRIPTION DATE 9/5/12 CO-21303 PREP DF/SM APPD LT EXAMPLES SHOWN IN ACTUAL SIZE VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard


    Original     		PDF CO-21303 OS-68338 54Mhz 70MHz OS-68338 MIL-STD-1686 MIL-PRF-55310 f1500g

    MIL-STD-1686

    Abstract: manufacturer list cots radiation OS-68338 pid 13 5vdc power one pmp 5.24 HT-67849 MIL-PRF-55310 ST MICROELECTRONICS DATE CODE MARKING 2011 CO-14428
    Text: REV K DESCRIPTION DATE 4/30/09 CO-14428 PREP DF/LT APPD LT VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard ENGINEERING S. Carpenter 10/30/00


    Original     		PDF CO-14428 OS-68338 MIL-STD-1686 manufacturer list cots radiation OS-68338 pid 13 5vdc power one pmp 5.24 HT-67849 MIL-PRF-55310 ST MICROELECTRONICS DATE CODE MARKING 2011 CO-14428

    1118 R Transistor

    Abstract: No abstract text available
    Text: TOSHIBA RN1114 ~R N 1118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1114, RN1115, RN1116, RN1117, RN1118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN1114 RN1114, RN1115, RN1116, RN1117, RN1118 RN2114--RN2118 RN1114 RN1116 RN1117 1118 R Transistor

    transistor C372

    Abstract: c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING
    Text: M I L - S -195 0 0 /1 3 8 C i v '• JÌC'^À.TJ _ SU PER SE D IN G M I L - S - 1 9 5 0 0 / 138B 29 M ay 1963 M IL IT A R Y S P E C IF IC A T IO N SEM ICO ND UCTOR D E V IC E , TRA N SISTO R , P N P , SILIC O N , L O W -PO W E R T Y P E 2N 1118 T h is s p e c ific a tio n is m a n d a to ry fo r u se by a ll De p a r tm e n ts an d A g e n c ie s of th e D e p a rtm e n t of D e fe n se .


    OCR Scan     		PDF 19500/138C 19500/138B 2N1118 MIL-S-19500/ MIL-S-19500, MIL-S-19500 1970-393-095/S-4456 transistor C372 c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN111 4 ~ R N 1 118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1114, RN1115, RN1116, RN1117, RN1118 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan     		PDF RN111 RN1114, RN1115, RN1116, RN1117, RN1118 RN2114 RN2118 RN1114 RN1115

    UDN5712

    Abstract: ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers
    Text: Siginetics Interface - Peripheral Power Driver UDN 5711/5712/5713/5714 Dual High Voltage Peripheral Drivers CONNECTION DIAGRAM GENERAL DESCRIPTION The UDN 5711 series of dual peripheral drivers have high voltage 80V and high current (300mA) NPN output transistors. In addition an overshoo-: clamp diode is pro­


    OCR Scan     		PDF 300mA) UDN5712 ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers

    signetics sd200

    Abstract: SIGNETICS SD201 041 itt diode SD201 Scans-0010592 SD200 SD202 SD203
    Text: S ig n e tic s Field Effect Transistors-D-MOS C O N N E C T IO N D IG R A M SD 200 - Series D-MOS G E N E R A L D E S C R IP TIO N D ouble -diffused silicon fie ld -e ffe c t transistors w ith insulated gates, in ten ded fo r u.h .f. and genera purpose r.f.


    OCR Scan     		PDF SD201 SD203 SD200 SD202 SD203 signetics sd200 SIGNETICS SD201 041 itt diode Scans-0010592 SD200

    041 itt diode

    Abstract: 5d214 5d211 SD211 S02V0 SD213 sd215 signetics l4401 5d213 s0211
    Text: S ig n e tic s Field Effect Transistors-D-M OS C O N N E C T IO N D IA G R A M SD 210 -Series G E N E R A L D E SC R IPTIO N Double-di-ffused silico n fie ld -e ffe c t transistors w ith insulated gates, p rim a rily intended fo r analogue/digital sw itch and sw itc h d river app lica tions. The y featu re lo w


    OCR Scan     		PDF SD211, SD213 SD215 S02V0 SD211 SD212 SD214 SD215 56061D 041 itt diode 5d214 5d211 sd215 signetics l4401 5d213 s0211

    1117 S Transistor

    Abstract: BFR101B BFR101A
    Text: 711002b D0bTlb4 435 • PHIN BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed prim arily fo r use as a source follow er w ith the input protected against successive voltage surges by a forward and reverse integrated


    OCR Scan     		PDF 711002b BFR101A BFR101B BFR101A 1117 S Transistor BFR101B

    PG1118

    Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135
    Text: 0043592 A P 1 E LE C TR O N IC S • -¡»îl ‘‘ " " . P I E L E ’C T R O M r C S ÍÑ C 13A 00 85 IN C 13 DE | T -3 3 -o l □ □ 4 3 5 Ei5 QOODOflS IN T ER IM B U L L E T IN , » S u b ject to Revision Without Notice . •? POWER TRANSISTOR ENGINEERING BUUETIN


    OCR Scan     		PDF 13A00 PG1118 PG1135, PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135

    BFR101A

    Abstract: marking 1117 BFR101B
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


    OCR Scan     		PDF BFR101A BFR101B BFR101B OT-14C BFR101A marking 1117

    BFR101A

    Abstract: BFR101 BFR101B
    Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


    OCR Scan     		PDF bb53T31 251cià BFR101A BFR101B BFR101 BFR101A BFR101B

    PG1118

    Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135
    Text: 0043592 A P I :-'*>A P i'E L E C T R O N IC S .->V E L EC TR O N l X s T Ñ c IN C 1_3A 00 8 5 _ J2 L # * L £ Z 13 m T J d OMSS^S 00000B5 M INTERIM BULLETIN . Su bject to Re vision Without Notice -JU N E 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1118 thru PG1135, 2 AMP NPN


    OCR Scan     		PDF PG1118 PG1135, PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1123 PG1126 PG1135

    MJ340

    Abstract: EM- 546 motor MJ3042
    Text: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 | XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching


    OCR Scan     		PDF b3fci7254 MJ3041 MJ3402 MJ3041, MJ3042 MJ340 EM- 546 motor MJ3042

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan     		PDF 2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960

    SD308

    Abstract: SD307 SD30 CGIS transistor ITT
    Text: S ig n e tic s Field Effect Transistors DMOS C H A R A C T E R IS T IC S SD307 G E N E R A L D E S C R IP TIO N D o uble-diffuse d, dual insulated-gate fie ld -e ffe c t tran sistor o f the enhancem ent m ode ty p e , p rim a rily intended fo r use as u .h.f. m ixer.


    OCR Scan     		PDF SD307 56072R S0308 SD308 56073G SD307 SD30 CGIS transistor ITT