1118 R TRANSISTOR Search Results

1118 R TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

1118 R TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UNR1111 Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112	PDF
1117 S Transistor Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115	PDF
1118 R Transistor Abstract: No abstract text available Text: TOSHIBA RN1114 ~R N 1118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1114, RN1115, RN1116, RN1117, RN1118 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1114 RN1114, RN1115, RN1116, RN1117, RN1118 RN2114--RN2118 RN1114 RN1116 RN1117 1118 R Transistor	PDF
transistor C372 Abstract: c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING Text: M I L - S -195 0 0 /1 3 8 C i v '• JÌC'^À.TJ _ SU PER SE D IN G M I L - S - 1 9 5 0 0 / 138B 29 M ay 1963 M IL IT A R Y S P E C IF IC A T IO N SEM ICO ND UCTOR D E V IC E , TRA N SISTO R , P N P , SILIC O N , L O W -PO W E R T Y P E 2N 1118 T h is s p e c ific a tio n is m a n d a to ry fo r u se by a ll De p a r tm e n ts an d A g e n c ie s of th e D e p a rtm e n t of D e fe n se .	OCR Scan	19500/138C 19500/138B 2N1118 MIL-S-19500/ MIL-S-19500, MIL-S-19500 1970-393-095/S-4456 transistor C372 c372 transistor 138C boonton 91-6c 2N1118 C372 KJT MARKING	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA RN111 4 ~ R N 1 118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1114, RN1115, RN1116, RN1117, RN1118 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors	OCR Scan	RN111 RN1114, RN1115, RN1116, RN1117, RN1118 RN2114 RN2118 RN1114 RN1115	PDF
UN1114 Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●	Original	111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118	PDF
1117 S Transistor Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and	Original	111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119	PDF
IR331x Abstract: mosfet short circuit protection schematic diagram IR3313 "battery protection" AN-1118 IR3310 current sensing DC motor schematic diagram Text: Application Note AN- 1118 IR331x : Current Sensing High Side Switch – P3 By David Jacquinod Table of Contents Page Introduction. 2 Inner Architecture . 2	Original	IR331x IR3310 IR331X mosfet short circuit protection schematic diagram IR3313 "battery protection" AN-1118 IR3310 current sensing DC motor schematic diagram	PDF
2160 transistor Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381 Text: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order	Original	GSP7427-89 GSP7427-89 100MHz 150mA 2160 transistor GSP7427 RO4003 C 2120 Y unmatched bare amplifier W-335 L381	PDF
OS-68338 Abstract: HT-67849 MIL-PRF-55310 5th class 2012 date sheet 5th class 2012 date sheet for 5th class 2012 MIL-STD-1686 manufacturer list cots radiation Vectron 1108 pmp 5.24 Text: REV G DESCRIPTION 05-0727: add 1118 Series and Appendix A DATE 4/7/05 PREP SC APPD SC EXAMPLES SHOWN IN ACTUAL SIZE VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY	Original	OS-68338 100krad OS-68338 HT-67849 MIL-PRF-55310 5th class 2012 date sheet 5th class 2012 date sheet for 5th class 2012 MIL-STD-1686 manufacturer list cots radiation Vectron 1108 pmp 5.24	PDF
GR-51681 Abstract: Vectron 1108 QSP-90100 VL-65339 HT-67849 OS-68338 Text: REV I DESCRIPTION DATE 2/22/07 07-0692 PREP RS APPD DF VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard ENGINEERING S. Carpenter 10/30/00	Original	OS-68338 GR-51681 Vectron 1108 QSP-90100 VL-65339 HT-67849 OS-68338	PDF
UDN5712 Abstract: ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers Text: Siginetics Interface - Peripheral Power Driver UDN 5711/5712/5713/5714 Dual High Voltage Peripheral Drivers CONNECTION DIAGRAM GENERAL DESCRIPTION The UDN 5711 series of dual peripheral drivers have high voltage 80V and high current (300mA) NPN output transistors. In addition an overshoo-: clamp diode is pro	OCR Scan	300mA) UDN5712 ca 5713 UDN5712N UDN5713N UDN5714 UDN5714N udn5713 CMOS Dual Peripheral Drivers	PDF
OS-68338 Abstract: MIL-STD-1686 MIL-PRF-55310 f1500g Text: REV L DESCRIPTION DATE 9/5/12 CO-21303 PREP DF/SM APPD LT EXAMPLES SHOWN IN ACTUAL SIZE VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard	Original	CO-21303 OS-68338 54Mhz 70MHz OS-68338 MIL-STD-1686 MIL-PRF-55310 f1500g	PDF
vp 3082 Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082 Text: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,	OCR Scan		PDF

041 itt diode Abstract: 5d214 5d211 SD211 S02V0 SD213 sd215 signetics l4401 5d213 s0211 Text: S ig n e tic s Field Effect Transistors-D-M OS C O N N E C T IO N D IA G R A M SD 210 -Series G E N E R A L D E SC R IPTIO N Double-di-ffused silico n fie ld -e ffe c t transistors w ith insulated gates, p rim a rily intended fo r analogue/digital sw itch and sw itc h d river app lica tions. The y featu re lo w	OCR Scan	SD211, SD213 SD215 S02V0 SD211 SD212 SD214 SD215 56061D 041 itt diode 5d214 5d211 sd215 signetics l4401 5d213 s0211	PDF
MIL-STD-1686 Abstract: manufacturer list cots radiation OS-68338 pid 13 5vdc power one pmp 5.24 HT-67849 MIL-PRF-55310 ST MICROELECTRONICS DATE CODE MARKING 2011 CO-14428 Text: REV K DESCRIPTION DATE 4/30/09 CO-14428 PREP DF/LT APPD LT VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Stan Carpenter 10/26/00 Oscillator Specification, Hybrid Clock QUALITY SWP 11/1/00 Hi-Rel Standard ENGINEERING S. Carpenter 10/30/00	Original	CO-14428 OS-68338 MIL-STD-1686 manufacturer list cots radiation OS-68338 pid 13 5vdc power one pmp 5.24 HT-67849 MIL-PRF-55310 ST MICROELECTRONICS DATE CODE MARKING 2011 CO-14428	PDF
1117 S Transistor Abstract: BFR101B BFR101A Text: 711002b D0bTlb4 435 • PHIN BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed prim arily fo r use as a source follow er w ith the input protected against successive voltage surges by a forward and reverse integrated	OCR Scan	711002b BFR101A BFR101B BFR101A 1117 S Transistor BFR101B	PDF
PG1118 Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135 Text: 0043592 A P 1 E LE C TR O N IC S • -¡»îl ‘‘ " " . P I E L E ’C T R O M r C S ÍÑ C 13A 00 85 IN C 13 DE \| T -3 3 -o l □ □ 4 3 5 Ei5 QOODOflS IN T ER IM B U L L E T IN , » S u b ject to Revision Without Notice . •? POWER TRANSISTOR ENGINEERING BUUETIN	OCR Scan	13A00 PG1118 PG1135, PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135	PDF
BFR101A Abstract: marking 1117 BFR101B Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated	OCR Scan	BFR101A BFR101B BFR101B OT-14C BFR101A marking 1117	PDF
BFR101A Abstract: BFR101 BFR101B Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source	OCR Scan	bb53T31 251ciÃ BFR101A BFR101B BFR101 BFR101A BFR101B	PDF
PG1118 Abstract: PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1126 PG1135 Text: 0043592 A P I :-'>A P i'E L E C T R O N IC S .->V E L EC TR O N l X s T Ñ c IN C 1_3A 00 8 5 _ J2 L # L £ Z 13 m T J d OMSS^S 00000B5 M INTERIM BULLETIN . Su bject to Re vision Without Notice -JU N E 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1118 thru PG1135, 2 AMP NPN	OCR Scan	PG1118 PG1135, PG1119 PG1120 PG1121 PG1122 PG1123 PG1124 PG1125 PG1123 PG1126 PG1135	PDF
MJ340 Abstract: EM- 546 motor MJ3042 Text: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 \| XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching	OCR Scan	b3fci7254 MJ3041 MJ3402 MJ3041, MJ3042 MJ340 EM- 546 motor MJ3042	PDF
bfw11 jfet Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72	OCR Scan	2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960	PDF
SD308 Abstract: SD307 SD30 CGIS transistor ITT Text: S ig n e tic s Field Effect Transistors DMOS C H A R A C T E R IS T IC S SD307 G E N E R A L D E S C R IP TIO N D o uble-diffuse d, dual insulated-gate fie ld -e ffe c t tran sistor o f the enhancem ent m ode ty p e , p rim a rily intended fo r use as u .h.f. m ixer.	OCR Scan	SD307 56072R S0308 SD308 56073G SD307 SD30 CGIS transistor ITT	PDF

1118 R TRANSISTOR Search Results

1118 R TRANSISTOR Result Highlights (5)

1118 R TRANSISTOR Datasheets Context Search

UNR1111

1117 S Transistor

1118 R Transistor

transistor C372

Untitled

UN1114

1117 S Transistor

IR331x

2160 transistor

OS-68338

GR-51681

UDN5712

OS-68338

vp 3082

041 itt diode

MIL-STD-1686

1117 S Transistor

PG1118

BFR101A

BFR101A

PG1118

MJ340

bfw11 jfet

SD308