1117 S Transistor
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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1117 S Transistor
Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
1117 S
1117 AT
1116
1117
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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t039 package transistor pin configuration
Abstract: 74c240
Text: 19-1114; Rev 2; 11/04 High-Precision, 10V Reference Features Maxim’s MX581 is a three-terminal, temperaturecompensated, bandgap voltage reference which provides a precision 10V output from an unregulated input of 12.5V to 30V. Laser trimming is used to minimize initial
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MX581
15ppm/
MX581.
14-bit
T0-39
packa14
t039 package transistor pin configuration
74c240
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Untitled
Abstract: No abstract text available
Text: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the
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QRD1113/1114
QRD1113/1114
QRD1113/1114.
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transistor bI 240
Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Text: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
ST2179nt
QRB1113
QRB1114
transistor bI 240
D transistor sEC
transistor 373
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sensor QRD1114
Abstract: QRD1114 reflective 1114 transistor C 1114 transistor
Text: REFLECTIVE OBJECT SENSOR IPT0ELEC1IIIIC5 QRD1113/1114 ii"' , ^ ' ' ü. .iUJ-'l-¿W.P. . PACKAGE DIMENSIONS T h e QRD1113/1114 reflective sensors consist of an PIN 1 INDICATOR infrared emitting diode and an NPN silicon — .083 2.11 II phototransistor m ounted side by side in a black plastic
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QRD1113/1114
QRD1113/1114
100//A,
sensor QRD1114
QRD1114
reflective
1114 transistor
C 1114 transistor
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QRB1113
Abstract: LTA 703 S
Text: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
QRB1113
LTA 703 S
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Untitled
Abstract: No abstract text available
Text: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an
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QRD1113/1114
QRD1113/1114
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C 1114 transistor
Abstract: No abstract text available
Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
000b33b
C 1114 transistor
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QRB1113
Abstract: QRB1114
Text: [*Q REFLECTIVE OBJECT SENSOR! QPTOELECTRQHICS QRB1113/11K DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared em itting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/11K
QRB1113
QRB1114
ST2179
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KSR1114
Abstract: KSR2114 9vv marking
Text: KSR2114 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (Ri =4.7K£1, R2=47K£1) • C om plem ent to K S R 1114 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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KSR2114
KSR1114
OT-23
-10nA,
-100nA,
-10mA,
-100nA
KSR1114
KSR2114
9vv marking
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26iK
Abstract: No abstract text available
Text: 19-1114; Rev 1:8/96 J \A Æ X \/V \ High Precision 10 Voit Reference _ General Description _ Features Maxim's MX581 is a three-terminal, temperature compen sated, band-gap voltage reference which provides a preclse'IO.OOV output from an unregulated input of 12.5V to
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MX581
15ppm/
MX581.
10lmm|
004ln.
26iK
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MX581
Abstract: MX581JCSA MX581JESA MX581JH MX581KCSA MX581KESA MX581KH MX581SH MX581TH
Text: 19-1114; Rev 1:8/96 J \A Æ X \/V \ High Precision 10 Voit Reference _ General Description _ Features Maxim's MX581 is a three-terminal, temperature compen sated, band-gap voltage reference which provides a preclse'IO.OOV output from an unregulated input of 12.5V to
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MX581
15ppm/Â
MX581.
MX581JCSA
MX581JESA
MX581JH
MX581KCSA
MX581KESA
MX581KH
MX581SH
MX581TH
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74c240
Abstract: transistor wm 02 a 3pin TO-39 CASE connection MX581KH transistor wm a 3pin MX581 MX581JCSA MX581JH MX581KESA MX581SH
Text: 19-1114; Rev 1; 8/96 / M y i X I / M H igh Precision 10 Volt Reference _ G e n e ra l D escH ption _FaafuTM Maxim's MX581 is a three-terminal, temperature compen sated, band-gap voltage reference which provides a pre
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MX581
15ppmTC
MX581.
750jiA.
74c240
transistor wm 02 a 3pin
TO-39 CASE connection
MX581KH
transistor wm a 3pin
MX581JCSA
MX581JH
MX581KESA
MX581SH
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION 2S B 1114 is designed fo r aud io freq uency pow er a m p lifie r and s w itch ing a p p lic a tio n , especially in H y b rid Integrated C ircuits, FEATURES
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2SB1114
2SD1614
2SB11
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1mt3
Abstract: No abstract text available
Text: yi/L/IXL/l/l 19-1114; Rev 1:8/96 High Precision IO Volt Reference _ G onoral D escription _ Features Maxim's MX581 is a three-terminal, temperature compen sated, band-gap voltage reference which provides a pre cise 10.00V output from an unregulated input of 12.5V to
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MX581
15ppmTC
MX581.
750jiA.
0X104
1mt3
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Untitled
Abstract: No abstract text available
Text: 19-1114: R»v 1:8/96 w l y i x i y n High Precision 10 Volt Reformncm _ Q eneral D escription _ Features Maxim's MX581 is a three-terminal, temperature compen sated, band-gap voltage reference which provides a pre cise '10.00V output from an unregulated input of 12.5V to
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MX581
15ppm/
MX581.
10j00
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Untitled
Abstract: No abstract text available
Text: U U HFA1114 H A R R IS S E M I C O N D U C T O R 850MHz Video Cable Driving Buffer Novem ber 1996 Features Description • Access to Summing Node Allows Circuit Customization T h e H FA 1114 is a closed loop Buffer featuring user program m able gain and ultra high speed performance.
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HFA1114
850MHz
483nm
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ECG1114
Abstract: No abstract text available
Text: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA
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ECG1114
T-74-05-Ã
ECG1114
14-leadquad
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE PROCESS CHARTS TRANSISTOR DICE PROCESS CHART SW IT C H IN G T R A N S IST O R S: Sample evaluation of all batches on switching parameters HIGH FREQ U EN CY T R A N S IST O R S: Sample evaluation of all batches on fT and capacitance 11-13
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MA42120
Abstract: No abstract text available
Text: Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power
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MA42120
MA42122
MA42123
MA42121
MA42123
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is
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5bM551M
MA42120
MA42122
MA42123
MA42121
MIL-STD-750
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