Samsung 2MX32 EDO
Abstract: Samsung 2MX32 EDO simm module
Text: DRAM MODULE KMM5322104BKU/BKUG KMM5322104BKU/BKUG Fast Page Mode with Extended Data Out 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESC RIPTIO N FEATURES • Part Identification The Samsung KMM5322104BKU is a 2M bit x 32 Dynamic RAM high density memory module. The
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KMM5322104BKU/BKUG
KMM5322104BKU/BKUG
2Mx32
KMM5322104BKU
28-pin
72-pin
KMM5322104BKU
Samsung 2MX32 EDO
Samsung 2MX32 EDO simm module
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ITT142
Abstract: No abstract text available
Text: TO SH IBA THMY6440D1EG-10 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6440D1EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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THMY6440D1EG-10
304-WORD
64-BIT
THMY6440D1EG
TC59S6416FT
THMY6440D1
ITT142
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Untitled
Abstract: No abstract text available
Text: SIEMENS Data Sheet C511/C511A/C513/C513A/C513A-H Revision History Current Version : 06.96 Previous Releases : 02.96, 05.95 Page Subjects changes since last revision Several 41 Corrections of text Figure 22: external clock configuration corrected 8-Bit CMOS Microcontroller Family
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C511/C511A/C513/C513A/C513A-H
C511A
C513A
C513A-H
256x8
16-bit
C513A-H
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Untitled
Abstract: No abstract text available
Text: 14-42 Wait Noiv-isolated DC/DC Converters Ld w Voltage Output UPM series converters are economic, high efficiency, non-isolated DC/DC converters which deliver up to 12A at a selection of low voltages from an existing on-board 5V or 3.3V bus. These devices are ideally suited for powering many of
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MA02134
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Untitled
Abstract: No abstract text available
Text: 1 MN6295 MN6296 ZKKff Micro Networks A D IV ISIO N OF U N I T M O I C O R P O R A T IO N LOW-DISTORTION, 50kHz 16-Bit, SAMPLING A/D CONVERTERS DESCRIPTION FEATURES • 50kHz Sampling Rate With Internal T/H Amplifier • 25kHz Full-Power Input Bandwidth • 84dB Signal-to-Noise Ratio
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MN6295
MN6296
50kHz
16-Bit,
50kHz
25kHz
-88dB
32-Pin
MIL-STD-883
MIL-STD-1772
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MB81C258-12
Abstract: c258 MB81C258 MB81C258-10
Text: FU JITSU 262144 BIT CMOS STATIC COLUMN DYNAMIC RAM MB81C258-10 MB81C258-12 MB81C258-15 1 1 1 O c to b e r 1 9 8 8 E d itio n 3 .0 262,144 x 1 BIT CMOS STATIC COLUMN DYNAMIC RAM The Fujitsu MB 81C258 is CMOS static colum n dynam ic random access memo ry, SC-DRAM, w hich is organized as 262144 w ord by 1 bit. This SC-DRAM is
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MB81C258-10
MB81C258-12
MB81C258-15
81C258
16030S
MB81C258-10
c258
MB81C258
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RCA-6939
Abstract: rca 6939 TWIN POWER pentode twin pentode tempilaq 6939 6939 tube
Text: 6939 TWIN POWER PENTODE Internally Neutralized for Push-Pull Ampi ifierService RCA-6939 i s a t w i n power p e n t o d e o f t h e 9 - p i n m i n i a t u r e t y p e i n t e n d e d f o r use a s a p u s h - p u l I r f - p o w e r - a m p I i f i e r t u b e o r as a f r e q u e n c y m u i t i p l i e r t u b e in c o m m u n i c a t i o n s e q u i p m e n t
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RCA-6939
rca 6939
TWIN POWER pentode
twin pentode
tempilaq
6939
6939 tube
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B 9 1AT
Abstract: til 31a MB90P673
Text: MB90P673 - 1 FCR4.0MC5 Ta» 20 Cdeg] G ? a. V1H/V1L m b. V2H/V2L m Typical Worst 5 3 1 -1 7 5 3 1 -1 .5 .3 V2H i i V2Li # — c. Fosc tH1 .1 -.1 -.3 -.5 400 =*= I d. -% %- Trise CuS] 31»
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MB90P673
NB90P673
B 9 1AT
til 31a
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Untitled
Abstract: No abstract text available
Text: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components
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MT16LSD
168-Pin
168-pin,
096-n
DE-26
II111
11111111l
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