110 SOT23 Search Results

110 SOT23 Result Highlights (5)

Part	Manufacturer	Description
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
ISL54103IHZ-T7A	Renesas Electronics Corporation	DDC Accelerator (DDCA), SOT23, /Reel
EL6204CWZ-T7A	Renesas Electronics Corporation	Laser Driver Oscillator, SOT23, /Reel
ISL54103IHZ-T7	Renesas Electronics Corporation	DDC Accelerator (DDCA), SOT23, /Reel
ISL21070CIH320Z-TK	Renesas Electronics Corporation	25µA Micropower Voltage References, SOT23, /Reel

110 SOT23 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking a38 Abstract: A36A A40 SOT23-5 Text: LMV101,LMV102,LMV105,LMV110 LMV101/102/105/110 Fixed-Gain Amplifiers Literature Number: SNOS494B LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors	Original	LMV101 LMV102 LMV105 LMV110 LMV101/102/105/110 SNOS494B SC70-5 marking a38 A36A A40 SOT23-5	PDF
BC847 SOT23 Abstract: BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A Text: Philips Semiconductors Small-signal Transistors TYPE NUMBER PACKAGE Selection guide VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 65 100 250 110 450 100 BC856 305 PNP COMPL. PAGE BC846 SOT23 BC846A SOT23 65 100 250 110 220 100 BC856A	Original	BC856 BC846 BC846A BC856A BC846AT SC-75 BC856AT BC846AW OT323 BC856AW BC847 SOT23 BC856BT SOT23 SOT323 SOT-323 BC850 SOT23 BC856BW BC846ASOT-23 BC856B SOT23 SOT23 BC846A	PDF
sot23-5 marking A41 Abstract: "Microphone Preamplifier" SOT23 M7 "Fixed Gain Amplifiers" "Microphone Preamplifiers" LMV110 LMV321 SC70-5 Text: LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors and a V+/2 bias circuit into one ultra tiny package, SC70-5 or SOT23-5. Fixed inverting gains of −1, −2, −5, and −10 are	Original	LMV101/102/105/110 LMV101/102/105/110 SC70-5 OT23-5. LMV101/102/105 LMV110 SC70-5 OT23-5 LMV321, sot23-5 marking A41 "Microphone Preamplifier" SOT23 M7 "Fixed Gain Amplifiers" "Microphone Preamplifiers" LMV110 LMV321	PDF
V04 SOT23-5 Abstract: SOT23 M7 sot23-5 A40 A36A LMV101 LMV102 LMV105 LMV110 LMV321 SC70-5 Text: LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LMV101/102/105/110 fixed-gain amplifier family integrates a rail-to-rail op amp, two internal gain-setting resistors and a V+/2 bias circuit into one ultra tiny package, SC70-5 or SOT23-5. Fixed inverting gains of −1, −2, −5, and −10 are	Original	LMV101/102/105/110 LMV101/102/105/110 SC70-5 OT23-5. LMV321, V04 SOT23-5 SOT23 M7 sot23-5 A40 A36A LMV101 LMV102 LMV105 LMV110 LMV321	PDF
Untitled Abstract: No abstract text available Text: User's Guide SLVU689A – June 2011 – Revised September 2012 TPS709xxEVM-110 Evaluation Module This User’s Guide describes the operational use of the TPS709xxEVM-110 Evaluation Module EVM as a reference design for engineering demonstration and evaluation of the TPS709xx, low dropout linear	Original	SLVU689A TPS709xxEVM-110 TPS709xx,	PDF
Untitled Abstract: No abstract text available Text: MCP6071/2/4 110 µA, High Precision Op Amps Features • • • • • • • • Description Low Offset Voltage: ±150 µV maximum Low Quiescent Current: 110 µA (typical) Rail-to-Rail Input and Output Wide Supply Voltage Range: 1.8V to 6.0V Gain Bandwidth Product: 1.2 MHz (typical)	Original	MCP6071/2/4 MCP6071/2/4 MCP6071) MCP6072) MCP6074) DS22142B-page	PDF
MCP6071 Abstract: ua 471 instrumentation amplifier mcp6071t-e difference between orcad pspice MCP6072 AN1332 MARKING CODE AHE MCP6071T MCP6071E Text: MCP6071/2/4 110 µA, High Precision Op Amps Description Features • • • • • • • • Low Offset Voltage: ±150 µV maximum Low Quiescent Current: 110 µA (typical) Rail-to-Rail Input and Output Wide Supply Voltage Range: 1.8V to 6.0V Gain Bandwidth Product: 1.2 MHz (typical)	Original	MCP6071/2/4 MCP6071/2/4 DS22142B-page MCP6071 ua 471 instrumentation amplifier mcp6071t-e difference between orcad pspice MCP6072 AN1332 MARKING CODE AHE MCP6071T MCP6071E	PDF
ua 471 instrumentation amplifier Abstract: mcp6071 MCP6071E gyrator MCP60 MCP6074E comparator test circuit DS00722 Text: MCP6071/2/4 110 µA, High Precision Op Amps Description Features • • • • • • • • Low Offset Voltage: ±150 µV maximum Low Quiescent Current: 110 µA (typical) Rail-to-Rail Input and Output Wide Supply Voltage Range: 1.8V to 6.0V Gain Bandwidth Product: 1.2 MHz (typical)	Original	MCP6071/2/4 MCP6071/2/4 DS22142A-page ua 471 instrumentation amplifier mcp6071 MCP6071E gyrator MCP60 MCP6074E comparator test circuit DS00722	PDF
MAX1683 Abstract: MAX1683EUK-T 593D MAX1682 MAX1682EUK-T Text: 19-1305; Rev 1; 8/98 Switched-Capacitor Voltage Doublers _Features ♦ 5-Pin SOT23 Package ♦ +2.0V to +5.5V Input Voltage Range ♦ 98% Voltage-Conversion Efficiency ♦ 110µA Quiescent Current MAX1682 ♦ Requires Only Two Capacitors	Original	MAX1682) MAX1682C/D MAX1682EUK-T MAX1683C/D MAX1683EUK-T OT23-5 MAX1682/MAX1683 MAX1683 593D MAX1682	PDF
FMMTA93 Abstract: FMMTA93R FMMTA42 FMMTA43 FMMTA92 FMMTA92R DSA003704 Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA92 FMMTA93 ISSUE 3 - JANUARY 1996 PARTMARKING DETAILS: Static Forward Current Transfer Ratio TYPICAL CHARACTERISTICS f Transition Frequency MHz 60 V+-=10V 50 40 0.1 10 1.0 100 130 110 90 SOT23 PARAMETER	Original	FMMTA92 FMMTA93 FMMTA92 -10mA, -30mA 20MHz FMMTA93 FMMTA93R FMMTA42 FMMTA43 FMMTA92R DSA003704	PDF
EPA018A-SOT23 Abstract: No abstract text available Text: Excelics EPA018A-SOT23 PRELIMINARY DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET • • • 110-120 15-20 27 SOURCE 2-4 DRAIN GATE 38 37-47 75.5 Top View All Dimensions In Mils ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PARAMETERS/TEST CONDITIONS	Original	EPA018A-SOT23 EPA018A-SOT23	PDF
MCP6071 Abstract: MCP6071E MCP6074E MCP6071T MCP6074 SOIC-6 microchip MCP6072 AN990 mcp6071t-e R100-10 Text: MCP6071/2/4 110 µA 高精度运算放大器概述特性 • • • • • • • • 低失调电压： ±150 µV （最大值）低静态电流： 110 µA （典型值）轨到轨输入和输出宽电源电压范围： 1.8V 至 6.0V 增益带宽积： 1.2 MHz （典型值）	Original	MCP6071/2/4 MCP6071 MCP6072 MCP6074 MCP6072 MCP6071 MCP6071E MCP6074E MCP6071T MCP6074 SOIC-6 microchip AN990 mcp6071t-e R100-10	PDF
BSS63 Abstract: BSS63R BSS64 Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 SEPTEMBER 95 ✪ COMPLIMENTARY TYPE BSS64 PARTMARKING DETAIL BSS63 - T3 BSS63R - T6 BSS63 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage	Original	BSS64 BSS63 BSS63 BSS63R 150oC -25mA, -10mA, BSS64	PDF
2907 TRANSISTOR PNP Abstract: MMBT2907 die 2907 pnp 2907a TRANSISTOR PNP MMBT2907A MMBT2907 2907 pnp transistor 2907A EQUIVALENT MMBT2907 ON 1N916 MMBT2222A Text: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mechanical Data	Original	MMBT2907A MMBT2222A) O-236AB OT-23) OT-23 MDS030300B1 2907 TRANSISTOR PNP MMBT2907 die 2907 pnp 2907a TRANSISTOR PNP MMBT2907A MMBT2907 2907 pnp transistor 2907A EQUIVALENT MMBT2907 ON 1N916 MMBT2222A	PDF

3vf4 Abstract: No abstract text available Text: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04)	Original	BAV99 OT-23 150mA 100uA 3vf4	PDF
1N916 Abstract: MMBT3904 MMBT3906 Text: General Purpose Transistor PNP COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)	Original	MMBT3906 MMBT3904) OT-23 MDS0306002A 1N916 MMBT3904 MMBT3906	PDF
General Transistor Abstract: 1N916 MMBT3904 MMBT3906 Text: General Purpose Transistor NPN COMCHIP www.comchiptech.com MMBT3904 NPN Silicon Type Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5)	Original	MMBT3904 MMBT3906) OT-23 MDS0306001A General Transistor 1N916 MMBT3904 MMBT3906	PDF
Untitled Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CH706D-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)	Original	CH706D-40PT OT-23 OT-23) 1000m -25oC	PDF
CH706D-40GP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CH706D-40GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)	Original	CH706D-40GP OT-23 OT-23) 1000m -25oC CH706D-40GP	PDF
Untitled Abstract: No abstract text available Text: DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data  Low RDS ON : • 75 m @VGS = -4.5V • 110 m @VGS = -2.7V  125 m @VGS = -2.5V Case: SOT23  Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0	Original	DMP2130L J-STD-020 MIL-STD-202, AEC-Q101 DS31346	PDF
DIODE WJ SOt23 Abstract: 7.a sot-23 marking BSs sot23 Text: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on	OCR Scan	OT-23 OT-23, 62702-S DIODE WJ SOt23 7.a sot-23 marking BSs sot23	PDF
Transistor Arrays Abstract: transistor SST 126 IMD6 transistor 136 138 140 Text: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD	OCR Scan	ailable-------------------------------110 SFET----------------------------------112 T0-220FP O-247 OT-23) SC-59/Japemw PSIP12Pin. LF12Pin Transistor Arrays transistor SST 126 IMD6 transistor 136 138 140	PDF
el 847 Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12 Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j	OCR Scan	t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12	PDF
"Microphone Preamplifier" Abstract: A35A diode dc components m7 footprint SOT23 M7 LMV101 LMV101M7X LMV102M7 LMV102M7X LMV110 LMV321 Text: ß a t i o n a l S e m i c o n d u c t o r LMV101/102/105/110 Fixed-Gain Amplifiers General Description Features The LM V101/102/105/110 fixed-gain a m plifier fam ily inte grates a rail-to-rail op am p, tw o internal gain-setting resistors and a V+/2 bias circuit into one ultra tin y package, SC 70-5 or	OCR Scan	LMV101/102/105/110 SC70-5 OT23-5. LMV321, "Microphone Preamplifier" A35A diode dc components m7 footprint SOT23 M7 LMV101 LMV101M7X LMV102M7 LMV102M7X LMV110 LMV321	PDF

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110 SOT23 Search Results

110 SOT23 Result Highlights (5)

110 SOT23 Datasheets Context Search

marking a38

BC847 SOT23

sot23-5 marking A41

V04 SOT23-5

Untitled

Untitled

MCP6071

ua 471 instrumentation amplifier

MAX1683

FMMTA93

EPA018A-SOT23

MCP6071

BSS63

2907 TRANSISTOR PNP

3vf4

1N916

General Transistor

Untitled

CH706D-40GP

Untitled

DIODE WJ SOt23

Transistor Arrays

el 847

"Microphone Preamplifier"