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    10V DRIVE NCH MOSFET Search Results

    10V DRIVE NCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    10V DRIVE NCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    30414

    Abstract: No abstract text available
    Text: Ordering number : ENA2289 FW276 N-Channel Power MOSFET 450V, 0.7A, 12.1Ω, Dual SOIC8 http://onsemi.com Features • On-resistance RDS on =9.3Ω(typ.) • Input capacitance Ciss=55pF(typ.) • 10V drive • Nch+Nch dual MOSFET • Halogen free compliance


    Original     		ENA2289 FW276 A2289-6/6 30414 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ zStructure Silicon N-channel MOSFET zDimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.


    Original     		R6020ANJ R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.


    Original     		R6020ANJ R0039A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R5019ANJ R5019ANJ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R6018ANJ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R6018ANJ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R5019ANJ R5019ANJ R1120A PDF

    R6018ANJ

    Abstract: No abstract text available
    Text: Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R6018ANJ R6018ANJ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10V Drive Nch MOSFET R6020ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R6020ANJ R0039A PDF

    RL266

    Abstract: No abstract text available
    Text: RCD075N20 Data Sheet 10V Drive Nch MOSFET RCD075N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.


    Original     		RCD075N20 SC-63) OT-428> RCD075N20 R1120A RL266 PDF

    Untitled

    Abstract: No abstract text available
    Text: R6018ANJ Data Sheet 10V Drive Nch MOSFET R6018ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R6018ANJ R6018ANJ R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.


    Original     		RCD050N20 SC-63) OT-428> R1120A PDF

    RCD-100

    Abstract: RCD100N
    Text: RCD100N20 Data Sheet 10V Drive Nch MOSFET RCD100N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.


    Original     		RCD100N20 SC-63) OT-428> RCD100N20 R1120A RCD-100 RCD100N PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET Î FS5AS-06 | HIGH-SPEED SWITCHING USE FS5AS-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .0 .1 6i2


    OCR Scan     		FS5AS-06 PDF

    fs70sm-03

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET j FS70SM-03 | HIGH-SPEED SWITCHING USE FS70SM-03 • 10V DRIVE • VDSS . 30V • rDS ON (MAX) .14mi2 • ID . 70A


    OCR Scan     		FS70SM-03 14mi2 fs70sm-03 PDF

    P 838 X MOSFET

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ! FS30UM-06 I % HIGH-SPEED SWITCHING USE FS30UM-06 • 10V DRIVE • VDSS . 60V • rDS ON (MAX) .30mQ • I D . 30A


    OCR Scan     		FS30UM-06 FS30UM-06 P 838 X MOSFET PDF

    C3EN

    Abstract: FS30AS-2
    Text: MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE i FS30AS-2 • 10V DRIVE • VDSS .100V • ros ON (m a x ) . 10O m O


    OCR Scan     		FS30AS-2 C3EN FS30AS-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FS70KM-03 HIGH-SPEED SWITCHING USE FS70KM-03 OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS .30V • rDS ON (MAX) .14m i2


    OCR Scan     		FS70KM-03 O-220FN PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET J FS30SM-03 HIGH-SPEED SWITCHING USE FS30SM-03 • 10V DRIVE • VDSS . 30V • TDS O N (M A X ) . 4 6 m £2


    OCR Scan     		FS30SM-03 FS30SM-03 t0-42 PDF

    mitsubishi j 170

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FS70VS-03 J HIGH-SPEED SWITCHING USE FS70VS-03 • 10V DRIVE • VDSS .30 V • r o s ON (M AX ) .1 4 m f l


    OCR Scan     		FS70VS-03 mitsubishi j 170 PDF

    43ti

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET I | FS30KM-2 | s HIGH-SPEED SWITCHING USE FS30KM-2 OUTLINE DRAWING Dimensions in mm Í • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 1 0 0m i2


    OCR Scan     		FS30KM-2 O-220FN 10TYPICAL) 43ti PDF

    250v 10A mosfet

    Abstract: MOSFET 250V 10A
    Text: MITSUBISHI Nch POWER MOSFET -sas— FS20UMA-5A soW HIGH-SPEED SWITCHING USE FS20UMA-5A OUTLINE DRAWING © Dimensions in mm o@© © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V


    OCR Scan     		FS20UMA-5A O-220 250v 10A mosfet MOSFET 250V 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET -sas— FS10UMA-5A soW HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING © Dimensions in mm Q ©@ © GATE © DRAIN ©SOURCE © DRAIN • 10V DRIVE . 250V


    OCR Scan     		FS10UMA-5A O-220 PDF

    FS12KMA4A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ^ FS12KMA-4A soW HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE . 200V • V • rDS ON (M A X ) .


    OCR Scan     		FS12KMA-4A O-220FN FS12KMA4A PDF