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    INA Bearings KA10-TN/A (ALTERNATE: KA10TNA)

    Plastic Closing Plug, 3.4mm ID, 10mm OD, 4.5mm WIDTH | INA Bearings (Schaeffler) KA10-TN/A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS KA10-TN/A (ALTERNATE: KA10TNA) Bulk 32 1
    • 1 $2.25
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
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    10TNA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage


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    PDF 2SC3671 Q55-Q0S 10tnA,

    PO7C

    Abstract: 2SC2380 2SC238
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R


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    PDF 2SC2380 470MHz, 470MHz 10tnA, 70MHz PO7C 2SC2380 2SC238

    40U25

    Abstract: No abstract text available
    Text: GaAs IRED S PHOTO-TRIAC T L P 3 5 2 7 U nit in mm T R I A C DR I V E R PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE S O LI D S T A T E R E L A Y 9 T h e T O S H I B A T L P 3 5 2 7 c o n s i s t s of a zero v o l t a g e U 13 15 19.8 2 ± 0 . 2 5 c r o s s i n g t u r n - o n p h o t o - t r i a c o p t i c a l l y c o u p l e d to


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    PDF

    PJ 969 diode

    Abstract: MP4012 PJ 969
    Text: MP4012 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2±0-2 LOAD SWITCHING. . Small Package by Full Molding.


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    PDF MP4012 PJ 969 diode MP4012 PJ 969

    2SC3745

    Abstract: MARKING CL3
    Text: 2SC3745 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF-C BAND LOW NOISE AMPL I F I E R APPLICATIONS. + 0.2 2.9- Q 3 FEATURES: • High Gain • Low Noise Figure NF=2.OdB Typ. • High fT fT=6.5GHz(Typ.) 4 ¿r LL |s2ie|2=12dB(Typ.) d o 0> -} 3 1 1 _.J_ 1


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    PDF 2SC3745 10raA 10niA -J150 -J100 2SC3745 MARKING CL3

    0T39

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA "H <D I S C R E T E / O P T O » F | ciDci7SSG OOlbbbfl 3 1~~ 99D 16668 D T- TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 8 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS ) INDUSTRIAL APPLICATIONS Unit in tnm


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    PDF DDlbb70 0T-39-I3 0T39

    2SC50

    Abstract: BO160
    Text: \"~P ffe i • 2 S C 5 0 1 3 í S jÉ B B : B JS S fiíl^ íttiíio • 2 S C 5 01 4 BU f f l * : iü m ffiH W ifflfflo • 2 SC 5 01 5 B B W É : s a m g Vc e o V 10 Ve b o (V ) i MS S i i : VHF/UHF f i i t a i t S f f l o # Ä : ÍI# B ttE lS o a ^


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    PDF 2SC50 10biA BO160

    MC301

    Abstract: MA862
    Text: - 66 - — K W r " J « S - fê fi •M A 862 & T ffljÉ : VHF/UHF VR V I f Í iüA) S I'o » » f P f f i f í í r F ) * « « . ' . , 1 0 3 A = m y f ' y ffí , T O : VHF ft Cd ( p F) 1.20 Vr =6V, f=lMHz r?(Q) 0.65 I f =2h A, f=100MHz Vr (¥) 1r (u A)


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    PDF MA862 100MHz 470MHz 50MHz 10//A, 50fflz MC301

    PL-2030

    Abstract: 4006B
    Text: HARRIS SEMICOND M.4E SECTOR D m M302271 HARRIS • F u lly static operation High*Voltage Types 2 0 -V o lt Rating ■ Permanent register storage w ith c lo ck line high o r lo w — no in fo rm a tio n recircu la tio n required Features: ■ S h iftin g rates up to 12 M H z @ 1 0 V (ty p .)


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    PDF M302271 18-Stage CD4006B 4006B 92CS-2MOIRI 677-I 2-97I D4006BH. PL-2030

    2SK2494-01

    Abstract: 003A
    Text: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2SK 2 4 9 4- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fiiji Electric C o j i d . i CHECKED '/u Y 0257-R-004a 1 . Scope This specifies Fuji power MOSFET


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    PDF 2SK2494-01 0257-R-004a O-220 80//s 0257-R-003a 10tnA 0257-R 2SK2494-01 003A

    Untitled

    Abstract: No abstract text available
    Text: UN IT R O D E C O R P / U N I T R O D E IC M3E D ^ 3 4 0 5 1 ^ DDlSDMfl □ « U N I IN T E G R A T E D C IR C U IT S LAS 1900 U N ITR O D E 5 AMP POSITIVE VOLTAGE REGULATORS T-5S-//-/3 FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts a 80°C C ase


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    PDF 34flSn 0012DS3 h185r

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    PDF MG50G2DM1

    5633

    Abstract: 40SPR 5613 ESBG5603 ESBR5603 SBG5603 SPG5623 SPY5603 espy
    Text: AC INTERFACE INC 10E D | 0DB33Û3 OOOOIME T | Stanley; - STANLEY SUPER BRIGHT ^ LED LAMP 5603 T - H I - 3 .1 ./5 T-1 3 4 ÍT Y P E 5613 5623 I- { 5633 ; SERIES ISELECTIO N G U ID E C O LO R. MATERIAL • GaAIAs Red GaAsP GaP GaP Green GaP GaP V, .-¡» s.» *


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    PDF 000014S 5633 40SPR 5613 ESBG5603 ESBR5603 SBG5603 SPG5623 SPY5603 espy

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2SC3041

    Abstract: No abstract text available
    Text: 2SC3041 No. 9 98 N041 a - SANYO * " N P N = M iÆ ifc7 V — X X -f •Ä B J I f * %• VCBOâ 5 0 0 V . ■ a ^ -y ^ V <? a t í ' ASO K . • S f e í 'f í x ^ ü E Í & A k s o lu t e Maximum R a t i n g s /T a = 2 5 ° C 3 U ÿ ÿ • X ï -y i ? Ï J ±


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    PDF 2SC3041 VcboS500V) 50/WH 200AH, T370-05 2SC3041

    NJU3713

    Abstract: NJU3713D NJU3713G P12C CZ514
    Text: N J U3 7 1 3 12-B IT • SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3713 is a 12-bit serial to parallel converter especially apply to MPU outport expander. The effective outport assignment of MPU is available as the connection between NJU3713 and MPU is required


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    PDF NJU3713 12-BIT NJU3713 NJU3713D NJU3713G CouT-50pF NJU3713D NJU3713G P12C CZ514

    Untitled

    Abstract: No abstract text available
    Text: N J U3 7 1 3 12-B IT • SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3713 is a 12-bit serial to parallel converter especially apply to MPU outport expander. The effective outport assignment of MPU is available as the connection between NJU3713 and MPU is required


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    PDF NJU3713 12-bit NJU3713D NJU3713G

    x0606

    Abstract: A1318 2SC3331 A1318 U 2SA1318 P370-05 C100 A3060 3060f
    Text: N o . I i (I O A/ 3060 # a-7T Nul 6 0 0 t ÿ li'A K f e 'ÿ l'. P N P / N P N X t , Î'-V -> / ' j U/!✓ -• > JIî V > | -''> » - - ' 2SA1318/2SC3331 ra& • wm’fà.-b' «orîsrsiitti ÜM* *M S M (> I*]W À S < ¡¿tèin-c 3 ,A» . A S Ü ^ IM \ / /


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    PDF Nal600 1318/2SC3331 2SA1318 2KA13tà 2SC3331 x0606 A1318 2SC3331 A1318 U P370-05 C100 A3060 3060f

    Untitled

    Abstract: No abstract text available
    Text: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO DïfjTaT7E50 0017114 T 99D 17114 DT'Uf-eà) TLR 2I6 GaP RED LIGHT EMISSION Unit in t m FEATURES: . Red All Plastic Mold Type . Rectangular Type Surface Size 2 x2mm) . Low Drive Current, High Intensity Red Light Emission.


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    PDF fjTaT7E50 10tnA

    Untitled

    Abstract: No abstract text available
    Text: T e m ic BPX99R .S e ni i c » n il u i i Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a hermetically sealed low profile TO—16 metal case. The solid metal base allows the user to mount the device


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    PDF BPX99R BPX99R O--16 5-Jul-96 15-Jul-96

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm


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    PDF 2C15MAX. -100nA 0Dlbb70 70Shi/n

    vds3v

    Abstract: 2SK274 2SK276
    Text: 'M l- Ç fflG a A s A - * tt i i II ft ft * # M G F 13 0 5 3 V I d s s (mA) 13.00 30.00 45. 00 f f l ü : SHF Î Î ? S i Vg so (V) gm(mS) 25.00 tf jg : N f t ? * y S 7 l ' + ^ ' j r y - I d ( üA) G sl(d B )* 13.00 F GaAs FET. • ÌS^IetÌb!£o ifiiüf^o


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    PDF 12GHz 2SK274) 10jiA, 10hiA, vds3v 2SK274 2SK276

    2SC24

    Abstract: 2sc2498 2SC2471 c1251
    Text: 106 - - Ä * ® — is a ïf • 2 S C 2 47 1 f f l ü : UHF i t t i , mm B ït UHF TV vHF tÿ mmmm 0 2 S C 2 4 8 O ffiÊ : VHF ífcft : fâT K M «#«, m , l ' 5 > ÿ ,/ a MS. • 2 S C 2 4 9 8 « Ê + : VHF/UHF S fë S Il ® S if Vc e o (V) 30 Ve b o (V)


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    PDF 2SC2471 -15mA, 200MHz 500MHz) 60MHz 200/fo 260MHz, 2SC24 2sc2498 c1251

    TLR8101

    Abstract: TLM8101 8101 opto 8101T tlg8101
    Text: Ti TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA DISCRETE/OPTO DËT| ^ 7 2 5 0 □ 0 1 ? a ci7 □ j p 99D 17297 D'T-Ul-á[ T L R 8 101, T L G 8 101, T LM 8101 20-P0INT I-CHANNEL BA R POINT D ISPL A Y . State of Displays. TLR8101 : Red :10-Point TLG8101 i Green:10-Point


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    PDF 20-P0INT TLR8101 10-Point TLG8101 TLM8101 TLR8101 TLG810L TIM8101 TLM8101 8101 opto 8101T