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    10R1C Search Results

    10R1C Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SLW10R-1C7LF Amphenol Communications Solutions 1.00mm Flex Connectors, SLW-R series, 10 Position, Side Entry ZIF Connector, 1mm (0.039inch) Pitch, Kinked Terminal, Lead-free Visit Amphenol Communications Solutions
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    10R1C Price and Stock

    C&K RTF10R1C

    SWITCH ROTARY DIP BCD 0.1A 5V
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    DigiKey RTF10R1C Bulk 700
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    Mouser Electronics RTF10R1C
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    Newark RTF10R1C Bulk 700
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    Sager RTF10R1C 700
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    Amphenol Communications Solutions SLW10R-1C7

    CONN FFC FPC BOTTOM 10POS 1MM RA
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    DigiKey SLW10R-1C7 Tray 4,800
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    Amphenol Communications Solutions SLW10R-1C7LF

    CONN FFC FPC BOTTOM 10POS 1MM RA
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    DigiKey SLW10R-1C7LF Tray
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    Newark SLW10R-1C7LF Bulk 4,800
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    SLW10R-1C7LF Bulk 160
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    GAPTEC Electronic GmbH & Co. KG LMT78_15-1.0R1/C

    DC-DC STEP DOWN REGULATORS
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    DigiKey LMT78_15-1.0R1/C Reel 350
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    Vishay Intertechnologies RE75G10R1C02

    Resistor, 10.1 Ohm, ± 1%, 30 W, Wirewound, Military Reliability, Solder Lug - Bulk (Alt: RE75G10R1C02)
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    Avnet Americas RE75G10R1C02 Bulk 7 Weeks 5
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    Find more 10R1C price and stock on Findchips.com

    10R1C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303

    2-10R1C

    Abstract: GT10J303 igbt 300V 10A
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 2-10R1C GT10J303 igbt 300V 10A

    Untitled

    Abstract: No abstract text available
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)


    Original     		PDF GT5J301

    15j301

    Abstract: transistor 15j301 GT15J301 2-10R1C
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage


    Original     		PDF GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C

    TOSHIBA IGBT DATA BOOK

    Abstract: transistor R1A r1a transistor 10R1A 10R1B 2-10R1A
    Text: Transistor Outline Package New Isolated Type TO–220NIS Package Outline Dimensions Outline Dimensions Unit: mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2 1 2.6 2.54 ±0.25


    Original     		PDF 220NIS 220NIS 10C1A 10R1A 10R1B 10R1C TOSHIBA IGBT DATA BOOK transistor R1A r1a transistor 10R1A 10R1B 2-10R1A

    GT15J301

    Abstract: No abstract text available
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. (IC = 15A) l Low Saturation Voltage


    Original     		PDF GT15J301 GT15J301

    gt10j303

    Abstract: No abstract text available
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation. l Enhancement−Mode. l High Speed. l Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 gt10j303

    10j303

    Abstract: IGBT Guide GT10J303 Toshiba c
    Text: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)


    Original     		PDF GT10J303 10j303 IGBT Guide GT10J303 Toshiba c

    GT15J301

    Abstract: TOSHIBA IGBT
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage


    Original     		PDF GT15J301 GT15J301 TOSHIBA IGBT

    2-10R1C

    Abstract: 5J301 GT5J301 Toshiba c
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage


    Original     		PDF GT5J301 2-10R1C 5J301 GT5J301 Toshiba c

    Untitled

    Abstract: No abstract text available
    Text: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage


    Original     		PDF GT15J301

    Untitled

    Abstract: No abstract text available
    Text: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT15G101

    GT15G101

    Abstract: No abstract text available
    Text: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT15G101 2-10R1C GT15G101

    GT5J301

    Abstract: No abstract text available
    Text: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)


    Original     		PDF GT5J301 GT5J301

    transistor R1A

    Abstract: r1a transistor 10R1A 10R1B
    Text: Transistor Outline Package New Isolated Type TO–220NIS パッケージ 外形図 パッケージ形状および寸法 単位 : mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2


    Original     		PDF 220NIS 10R1A 10R1B 10C1A 10R1C transistor R1A r1a transistor 10R1A 10R1B