XC3030-70PC84C
Abstract: EPM5128LC EP330PC-15 A1020 transistor A1010B-PL68C EPM5128GM EP330PC15 EP330PC XC3042-70PC84C A1020A-PL84C
Text: ULCt Cross-Reference Matra MHS Cross reference list of devices supported for ULC conversion is not exhaustiv as new devices are added regularly. Additional devices not shown in this list, may also be supported. MHS encourages you to contact your local TEMIC sales representative
|
Original
|
A1010A-PL44C
A1010B-PL44C
ULC/A1010
44-PLCC
A1010A-PL44I
A1010B-PL44I
A1010A-1PL44C
A1010B-1PL44C
A1020A-1PL44C
XC3030-70PC84C
EPM5128LC
EP330PC-15
A1020 transistor
A1010B-PL68C
EPM5128GM
EP330PC15
EP330PC
XC3042-70PC84C
A1020A-PL84C
|
PDF
|
tsop6 marking 443
Abstract: NTGS3443T1 NTGS3443T1G
Text: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 Features • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP6 Surface Mount Package Pb−Free Package May be Available. The G−Suffix Denotes a
|
Original
|
NTGS3443T1
NTGS3443T1/D
tsop6 marking 443
NTGS3443T1
NTGS3443T1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6 Features • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP6 Surface Mount Package Pb−Free Package May be Available. The G−Suffix Denotes a
|
Original
|
NTGS3443T1
NTGS3443T1
1E-03
1E-02
1E-01
1E-04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3441T1
|
PDF
|
NTGS3441T1
Abstract: No abstract text available
Text: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3441T1
r14525
NTGS3441T1/D
NTGS3441T1
|
PDF
|
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
|
Original
|
DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
|
PDF
|
NTGS3446
Abstract: NTGS3446T1 NTGS3446T1G
Text: NTGS3446 Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446/D
NTGS3446
NTGS3446T1
NTGS3446T1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available 1 AMPERE 20 VOLTS RDS(on) = 90 mW
|
Original
|
NTGS3441T1
NTGS3441T1
1E-03
1E-02
1E-01
1E-04
|
PDF
|
NTGS3446
Abstract: NTGS3446T1 NTGS3446T1G
Text: NTGS3446 Power MOSFET 20 V, 5.1 A Single N−Channel, TSOP6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446/D
NTGS3446
NTGS3446T1
NTGS3446T1G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3443T1 HDTMOS3e Single TSOP-6 P-Channel Enhancement-Mode Power MOSFET Features http://onsemi.com • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP6 Surface Mount Package Single P–Channel 1256 Applications DRAIN • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3443T1
r14525
NTGS3443T1/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3441T1 HDTMOS3e Single TSOP-6 P-Channel Enhancement-Mode Power MOSFET Features http://onsemi.com • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP6 Surface Mount Package Single P–Channel 1256 Applications DRAIN • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3441T1
r14525
NTGS3441T1/D
|
PDF
|
NTGS3446
Abstract: NTGS3446T1 NTGS3446T1G
Text: NTGS3446 Power MOSFET 20 V, 5.1 A Single N−Channel, TSOP6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446/D
NTGS3446
NTGS3446T1
NTGS3446T1G
|
PDF
|
|
|
tsop6 marking 443
Abstract: NTGS3443T1
Text: NTGS3443T1 Power MOSFET 2 Amps, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP6 Surface Mount Package http://onsemi.com 2 AMPERES 20 VOLTS RDS(on) = 65 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3443T1
r14525
NTGS3443T1/D
tsop6 marking 443
NTGS3443T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTGS3446 Power MOSFET 20 V, 5.1 A Single N−Channel, TSOP6 Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
|
Original
|
NTGS3446
NTGS3446/D
|
PDF
|
NTGS3441T1
Abstract: No abstract text available
Text: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:
|
Original
|
NTGS3441T1
r14525
NTGS3441T1/D
NTGS3441T1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HR 12 SERIES MINIATURE CIRCULAR DIN TYPE CONNECTOR S cop e \ - -The HR 12 is a high-density plastic type miniature con nector with built-in shielding mechanism that is designed for OA equipment such as personal computers, word
|
OCR Scan
|
10-contact
300VAC
200mf2
250VD
30mf2
|
PDF
|
