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    10N60 E Search Results

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    10N60 E Price and Stock

    Vishay Intertechnologies SIHJ10N60E-T1-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHJ10N60E-T1-GE3)
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    Avnet Americas SIHJ10N60E-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SIHJ10N60E-T1-GE3 6,285
    • 1 $2.55
    • 10 $2.15
    • 100 $1.75
    • 1000 $1.32
    • 10000 $1.21
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    Newark SIHJ10N60E-T1-GE3 Reel 3,000
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    SIHJ10N60E-T1-GE3 Cut Tape 1
    • 1 $3.06
    • 10 $2.59
    • 100 $2.11
    • 1000 $1.97
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    TTI SIHJ10N60E-T1-GE3 Reel 6,000 3,000
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    TME SIHJ10N60E-T1-GE3 1
    • 1 $2.95
    • 10 $2.65
    • 100 $2.11
    • 1000 $1.96
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    Chip1Stop SIHJ10N60E-T1-GE3 1,385
    • 1 $1.95
    • 10 $1.497
    • 100 $1.44
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    EBV Elektronik SIHJ10N60E-T1-GE3 19 Weeks 3,000
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    Nisshinbo Micro Devices R1210N601C-TR-FE

    Switching Voltage Regulators 8V Input PWM Step-up DCDC Converter
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    Mouser Electronics R1210N601C-TR-FE
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    Nisshinbo Micro Devices R1210N601D-TR-FE

    Switching Voltage Regulators 8V Input PWM Step-up DCDC Converter
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    Mouser Electronics R1210N601D-TR-FE
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    Nisshinbo Micro Devices R1210N602C-TR-FE

    Switching Voltage Regulators 8V Input PWM Step-up DCDC Converter
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics R1210N602C-TR-FE
    • 1 -
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    Nisshinbo Micro Devices R1210N602D-TR-FE

    Switching Voltage Regulators 8V Input PWM Step-up DCDC Converter
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics R1210N602D-TR-FE
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    10N60 E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l

    tf 10n60

    Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet

    10N60G TO-220F

    Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l

    UTC10N60

    Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T

    10N60G TO-220F

    Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 10N60L QW-R502-119

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 O-220 O-220F O-220at QW-R502-119

    10N60L

    Abstract: 10N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G

    10N60A

    Abstract: IGBT 10N60 10N60 10N60 e N60A
    Text: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 10N60A 10N60 10N60 10N60A 10N60U1 IGBT 10N60 10N60 e N60A

    10N60A

    Abstract: IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60
    Text: Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability VCES IC 25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXSH10N60 IXSH10N60A O-247 10N60A IGBT 10N60 10N60 IXSH10N60 IXSH10N60A g 10N60

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Preliminary data High Speed IGBT IXSH10N60 IXSH10N60A Short Circuit SOA Capability <> V CES *C 25 V CE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V TO-247 AD Symbol Test Conditions VCES Tj = 25° C to 150°C 600 V Vtcgr Tj = 25°C to 150°C; RGE = 1 MD


    OCR Scan     		PDF IXSH10N60 IXSH10N60A O-247