Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    10MAR97 Search Results

    10MAR97 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    application note jfet J111 transistor

    Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
    Text: AN105 FETs As VoltageĆControlled Resistors Introduction: The Nature of VCRs A voltage-controlled resistor VCR may be defined as a three-terminal variable resistor where the resistance value between two of the terminals is controlled by a voltage potential applied to the third.


    Original     		AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N PDF

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet PDF

    Si6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 D S S G 1 2 3 4 D Si6410DQ 8 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET


    Original     		Si6410DQ S-51982--Rev. 10-Mar-97 PDF

    70611

    Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
    Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a


    Original     		AN804 retur5600 VP0300L O-226AA VN0300L TP0610L 2N7000 70611 FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. P LTR DESCRIPTION ECO-14-008653 D DWN APVD JM 10JUN2014 LS 1 MATERIAL: PANEL - STEEL, POWDER COAT, BLACK. JUMPER TROUGH: -1 POLYCARBONATE MOLDING COMPOUND, IVORY.


    Original     		ECO-14-008653 10JUN2014 10MAR97 110XC PDF

    P-Channel Depletion Mosfets

    Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
    Text: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in


    Original     		AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor PDF

    FET J202

    Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a


    Original     		AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet PDF

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 2N4338 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs SST404 PDF

    silicon npn planar rf transistor sot 143

    Abstract: MAR 641 TRANSISTOR mar 552 MAR 618 transistor "Small Signal Amplifiers" BFP67 BFP67R f 1405 zs
    Text: BFP67/BFP67R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


    Original     		BFP67/BFP67R BFP67 BFP67R D-74025 10-Mar-97 silicon npn planar rf transistor sot 143 MAR 641 TRANSISTOR mar 552 MAR 618 transistor "Small Signal Amplifiers" f 1405 zs PDF

    TZX33

    Abstract: Telefunken tk 19 TZX10 TZX11 TZX12 TZX13 TZX14 TZX15 TZX16 TZX18
    Text: TZX. Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C


    Original     		D-74025 10-Mar-97 TZX33 Telefunken tk 19 TZX10 TZX11 TZX12 TZX13 TZX14 TZX15 TZX16 TZX18 PDF

    FET pair n-channel p-channel

    Abstract: VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to n-type silicon.


    Original     		AN804 10-Mar-97 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel VN0300L equivalent FET P-Channel Switch 2N7000 MOSFET mosfet discrete totem pole CIRCUIT logic level complementary MOSFET Siliconix "fet" 2n7000 complement mosfet discrete totem pole drive CIRCUIT VP2020L PDF

    2N5088 equivalent

    Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
    Text: AN106 Low-Noise JFETs — Superior Performance to Bipolars D Introduction Junction field effect transistors continue to outperform the best bipolar transistors on low-frequency noise at source impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET


    Original     		AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393 PDF

    Siliconix AN102

    Abstract: J201 N-channel JFET "common drain" amplifier impedance matching pair datasheet 2n5484 jfet matched pair JFET Dual N-Channel JFET SST5484 Siliconix JFETs Dual Siliconix JFET Dual 2n5912 sot
    Text: AN102 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant


    Original     		AN102 2N4338 SST/J202 2N4339 10-Mar-97 2N4338/9 SST/J201 SST/2N5485 SST/J202 Siliconix AN102 J201 N-channel JFET "common drain" amplifier impedance matching pair datasheet 2n5484 jfet matched pair JFET Dual N-Channel JFET SST5484 Siliconix JFETs Dual Siliconix JFET Dual 2n5912 sot PDF

    siliconix sd210

    Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.


    Original     		AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 2N4959 siliconix sd210 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400 PDF

    FET J202

    Abstract: transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392
    Text: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and


    Original     		AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 transistor j201 high impedance current sources -rs 2N4393 j112 fet siliconix fet data book Transistor J304 Siliconix 2n Siliconix FET siliconix fet 2N4392 PDF

    SD5000

    Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application


    Original     		AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210DE 2n7000 equivalent PDF

    PMC91

    Abstract: PM431
    Text: CD-ROM Documents Download a current version of this list from our web site New documents are posted on http://www.pmc-sierra.com/docs/cdrom/doclist.pdf http://www.pmc-sierra.com/register/w-new_docs.asp Asynchronous/PDH Document Type Issue QDSX Short Form Data Sheet


    Original     		PM4314 11-Mar-98 PMC-941034 10-Feb-97 PMC-950857 PM4341A PMC-920108 17-MC-930531 27-Jul-95 PMC91 PM431 PDF

    Siliconix AN102

    Abstract: FET J202 Siliconix JFET application note 2N5912 transconductance 2N5485 2N4339 Siliconix AN102 datasheet 2n5484 jfet 2N4338 2N5484
    Text: AN102 JFET Biasing Techniques Introduction Engineers who are not familiar with proper biasing methods often design FET amplifiers that are unnecessarily sensitive to device characteristics. One way to obtain consistent circuit performance, in spite of device variations, is to use a combination of constant


    Original     		AN102 2N4338 SST/J202 2N4339 10-Mar-97 2N4338/9 SST/J201 SST/2N5485 SST/J202 Siliconix AN102 FET J202 Siliconix JFET application note 2N5912 transconductance 2N5485 2N4339 Siliconix AN102 datasheet 2n5484 jfet 2N5484 PDF

    mar 827

    Abstract: 8 pin plc cable
    Text: THIS DRAWING 13 A CONTROLLED DOCUMENT FOR AMP INCORPORATED. IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST FT 8 P LTR DESCRIPTION DATE DUN APVD D E REDRAW ON CAD PER EC 0020-1109-95


    OCR Scan     		09MAY94 1O-MAR-97 amp35397 e/ssrv026d/dsk04/dept4023/amp35397/edmmod mar 827 8 pin plc cable PDF

    btzx15

    Abstract: TZX12B tzx6v8b
    Text: Tem ic Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications 94 9367 Voltage stabilization Absolute Maximum Ratings


    OCR Scan     		200mA D-74025 10-Mar-97 btzx15 TZX12B tzx6v8b PDF

    BF579

    Abstract: marking GG BF579R
    Text: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3


    OCR Scan     		BF579/BF579R BF579R BF579 10-Mar-97 marking GG PDF

    ic-vn

    Abstract: No abstract text available
    Text: Temic BFP67/BFP67R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. jk Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain


    OCR Scan     		BFP67/BFP67R BFP67 BFP67R 10-Mar-97 tQ-05 1O-Mar-97 ic-vn PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6410DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary Vd s (V) I d (A) ±7.8 ± 6.3 rDS(on) (Q) 0.014 @ VGS= 10 V 0.021 @ Vqs = 4.5 V 30 p o '« *0' D Q TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied com m on. It ,O 1 Top View


    OCR Scan     		6410DQ S-51982--Rev. 10-Mar-97 S-51982-- l0-Mar-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2005 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - - LOC ALL RIGHTS RESERVED. AJ DIST 00 REVISIONS P LTR J DESCRIPTION DATE REVISED PER ECO 06-016786 DWN APVD DW KW 1 /2 2 /2 0 0 7 D D C 415024


    OCR Scan     		31MAR2000 10MAR97 PDF