Untitled
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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MMBT3904
OT-23
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
IEC61249
OT-23,
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PDF
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MMBT3904
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT-23 Unit：inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
IEC61249
OT-23
OT-23,
MMBT3904
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
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PDF
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"marking s1a" sot-23
Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,
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Original
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MMBT3904
200mA
300MHz
10mAdc,
20Vdc
100MHz
2002/95/EC
OT-23,
MIL-STD-750,
"marking s1a" sot-23
1N916
MMBT3904
MMBT3904 40V SOT23
transistor marking s1a
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PDF
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K1010
Abstract: FB0803 e 420 DCK-1010
Text: FB0803 扩散硅型压力变送器 一技术指标 使用对象 液体、气体或蒸汽 表压：0～5KPa～3.5MPa , 密封表压：0～7MPa～120MPa 测量范围 绝压： 0～20KPa～120Mpa ， 负压：-100KPa～700KPa 输出 4～20mADC，可提供 0-10mADC,0-5VDC,1-5VDC 等形式
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FB0803
05KPa3
07MPa120MPa
020KPa120Mpa
-100KPa700KPa
420mADC
0-10mADC
1530VDC(
420mADC
20-200Hz
K1010
FB0803
e 420
DCK-1010
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PDF
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Untitled
Abstract: No abstract text available
Text: AM7203 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionPair;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.
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AM7203
0mA-10mAdc.
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PDF
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Untitled
Abstract: No abstract text available
Text: AM7208 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleBR-2w Mounting StyleT DescriptionQuad;PIV 100V;trr 50ns;If 50mA;C 4.0pf;If match 5.0mA-10mAdc.
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AM7208
0mA-10mAdc.
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PDF
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2N2907 application notes
Abstract: 2N2907 a TRANSISTOR
Text: MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features • • • High current max.600mA Low voltage (max.60V) Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
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2N2907
2N2907A
600mA)
2N2907A
2N2907 application notes
2N2907 a TRANSISTOR
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PDF
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2N4403 noise figure
Abstract: No abstract text available
Text: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range
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2N4403
-55OC
150OC
MIL-STD-202E
583-2N4403
2N4403 noise figure
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PDF
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2N2484UA
Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN
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MIL-PRF-19500/376
2N2484UA
2N2484UB
2N2484UBC
500Adc,
30MHz
100kHz
T4-LDS-0058
2N2484UA
2N2484
2N2484UB
50VDC
2N2484UBC
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PDF
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2N2907A
Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
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MIL-PRF-19500/291
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907A
2N2906AUBC
2N2907AUB
2N2906A
2N2907A JANTX
2N2907AUBC
10VDC
2N2906AL
2N2906AUA
2N2906AUB
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PDF
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pressure vessel
Abstract: NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE LD500 M12X1 M20X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting
Text: LD500 pressure transmitter Description LD500 pressure transmitter adopts the high accurate and stable isolation sensors from USA, which combine solid-state integration technique with isolation diaphragm technique. The product preserves high sensitivity, linearity and stability even
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LD500
420mADC
15VDC
range01reakdown.
LD500
M20X1
M12X1
pressure vessel
NEGATIVE Pressure TranSMITTER 4 WIRE
Pressure transmitter 4 WIRE
M12X1
DIAPHRAGM PUMP
pressure oil gauge sensor
wheatstone bridge in pressure sensor
anti-lighting
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Schottky Barrier Diode BAT54X List List. 1 Package outline. 2 Features. 2
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Original
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BAT54X
MIL-STD-750D
METHOD-1051
1000hrs.
METHOD-1038
METHOD-1031
METHOD-1056
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PDF
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Untitled
Abstract: No abstract text available
Text: SPD48 thru SPD51 Solid State Devices, Inc. Series 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 200 mAMP 50-125 Volts 5 nsec Part Number / Ordering Information 1/
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SPD48
SPD51
10mADC
100mADC
RH0085G
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N4401 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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2N4401
600mWatts
-55oC
150oC
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PDF
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MSD7000
Abstract: MSD700 LMBT6520LT1G
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G Ordering Information Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS
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LMBT6520LT1G
3000/Tape
LMBT6520LT3G
10000/Tape
OT-23
MSD7000
MSD700
LMBT6520LT1G
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PDF
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SC-89
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA
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LMBT3904TT1G
3000/Tape
LMBT3904TT3G
10000/Tape
SC-89
463C-01
463C-02.
SC-89
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PDF
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MMBL914H
Abstract: No abstract text available
Text: MMBL914H SOD-323 1 WEITRON http://www.weitron.com.tw MMBL914H Maximum Ratings Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM Surge 500 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board TA=25 C Derate Above 25 C
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Original
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MMBL914H
OD-323
MMBL914H
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PDF
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125OC
Abstract: MMBT2907LT1
Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range
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MMBT2907LT1
OT-23
-55OCto
150OC
OT-23
MIL-STD-202E
CHARA10
125OC
MMBT2907LT1
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PDF
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MMBT6427
Abstract: No abstract text available
Text: MMBT6427 NPN Transistors Darlington Amplifier COLLECTOR 3 * We declare that the material of product compliance with RoHS requirements. BASE 1 P b Lead Pb -Free EMITTER 2 MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage
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Original
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MMBT6427
OT-23
21-Dec-07
OT-23
MMBT6427
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PDF
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MMBT2222AGH
Abstract: 1N914
Text: Zowie Technology Corporation General Purpose Transistor NPN Silicon Halogen-free type Lead free product COLLECTOR 3 3 MMBT2222AGH BASE 1 1 2 2 SOT-23 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO
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Original
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MMBT2222AGH
OT-23
MMBT2222AGH
1N914
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PDF
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MARKING IY SOT
Abstract: No abstract text available
Text: WTA8921 PNP Silicon Transistors COLLECTOR * “G” Lead Pb -Free 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value
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Original
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WTA8921
OT-23
WTA8921
-20mAdc)
-10Vdc,
-10mAdc,
30MHz)
OT-23
MARKING IY SOT
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PDF
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MD986
Abstract: MD986F MD966 508 die 610-A03
Text: MD9 8 6 silicon MD9 8 6 F NPN/PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as switches, dual general-purpose amplifiers, front end detectors and in temperature compensation applications. • Low Collector-Emitter Saturation Voltage -V cE(sat) ~ 0.3 Vdc (Max) @ I q = 10mAdc
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OCR Scan
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MD986
MD986F
10MAdc,
MD986F
300ms.
MD986
MD966
508 die
610-A03
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PDF
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MMBTH10
Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter
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OCR Scan
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MPSW92
bS01130
0Q37273
r-31-n
MMBTA92
TL/G/10100-1
O-226AE
O-236
OT-23)
TL/G/10100-5
MMBTH10
t-31-21
MMBTA92
MMBTH11
MPSH10
MPSH11
MPSW92
T3121
MPS-H10 national
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PDF
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