Untitled
Abstract: No abstract text available
Text: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency
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MA4AGP907
MA4AGFCP910
MA4GP907
MA4GFCP910
MA4AGFCP910
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MA4GFCP910
Abstract: PIN diodes 10GHZ
Text: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4AGP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency
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MA4AGP907
MA4AGFCP910
MA4GFCP910
MA4AGFCP910
MA4GFCP910
PIN diodes 10GHZ
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MA4GP907
Abstract: 10ghz pin diode
Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
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MA4GP907
MA4GP907
10ghz pin diode
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MA4AGFCP910
Abstract: MA4AGP907 MA4AGSBP907 MADP
Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed
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MA4AGP907
MA4AGFCP910
MA4AGP907
MA4AGFCP910
MA4AGSBP907
MADP
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MA4AGFCP910
Abstract: MA4AGP907 MA4AGSBP907
Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
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MA4AGP907
MA4AGFCP910
MA4AGP907
MA4AGFCP910
MA4AGSBP907
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madp pin diode
Abstract: No abstract text available
Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency
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MA4AGP907
MA4AGFCP910
MA4AGFCP910
madp pin diode
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Untitled
Abstract: No abstract text available
Text: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
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MA4AGP907
MA4AGFCP910
MA4AGP907
MA4AGFCP910
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sensor radar 24ghz
Abstract: 24GHz Radar MASW-004240-13170W macom pin diode application radar sensor
Text: MASW-004240-13170W M/A-COM Products V1 HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required
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MASW-004240-13170W
MASW-004240-13170W
sensor radar 24ghz
24GHz Radar
macom pin diode application
radar sensor
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radar sensor
Abstract: sensor radar 24ghz M541 24GHz Radar
Text: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch with Integrated Bias Network V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Operating Freq. 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required
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MASW-004240-13170W
MASW-004240-13170W
radar sensor
sensor radar 24ghz
M541
24GHz Radar
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Untitled
Abstract: No abstract text available
Text: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode Features • • M/A-COM Products Rev. 5 RoHS Compliant Mounting Side with Solder Bumps Solderable Bump Die Attach Low Series Resistance Ultra Low Capacitance
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MA4AGSBP907
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sensor radar 24ghz
Abstract: radar sensor MASW-004240-13170W M541 24GHz Radar
Text: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required Low Current Consumption
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MASW-004240-13170W
MASW-004240-13170W
sensor radar 24ghz
radar sensor
M541
24GHz Radar
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Untitled
Abstract: No abstract text available
Text: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed
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MA4AGSBP907
MA4AGSBP907
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Untitled
Abstract: No abstract text available
Text: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ M/A-COM Products Rev. 4 RoHS Compliant Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency
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MA4AGSBP907
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6858 pin
Abstract: MA4AGSBP907 01346E
Text: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed
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MA4AGSBP907
MA4AGSBP907
6858 pin
01346E
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MO-220
Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications
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CHE1270-QAG
5-44GHz
CHE1270-QAG
E1270
CHE1270
5-44GHz
DSCHE1270-QAG0329
MO-220
AN0017
CHE1270
esd protection smd
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MA4GP905
Abstract: M541 10ghz pin diode
Text: MA4GP905 GaAs RoHS Compliant Rev. V2 Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL ♦ Silicon Nitride Passivation
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MA4GP905
MA4GP905
M541
10ghz pin diode
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Untitled
Abstract: No abstract text available
Text: MA4GP905 GaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL
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MA4GP905
MA4GP905
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IS10E
Abstract: Microwave PIN diode MA4AGBLP912 MA4AGBLP912 MA4AGBPL912
Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL
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MA4AGBLP912
MA4AGBLP912
IS10E
Microwave PIN diode MA4AGBLP912
MA4AGBPL912
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TUNNEL DIODE
Abstract: No abstract text available
Text: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring
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PE70A6000
PE70A6000
sma-female-0-watts-attenuator-pe70a6000-p
TUNNEL DIODE
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beam lead PIN diode
Abstract: No abstract text available
Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL
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MA4AGBLP912
MA4AGBLP912
beam lead PIN diode
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Untitled
Abstract: No abstract text available
Text: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-G FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP-G
10Gb/s.
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MA4GP907
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
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photodiode 10Ghz PIN
Abstract: FLD5F20NP-C 10 gb laser diode
Text: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection
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550nm
FLD5F20NP-C
10Gb/s.
wave4888
photodiode 10Ghz PIN
FLD5F20NP-C
10 gb laser diode
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MA4AGBLP912
Abstract: PIN diodes 10GHZ
Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features • • Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL
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MA4AGBLP912
MA4AGBLP912
PIN diodes 10GHZ
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