MAX872CSA
Abstract: No abstract text available
Text: >kiyixi>ki 19-0005; Rev 2 ; 6/97 10fiA, Low-Dropout, Precision Voltage R e f e r e n c e s Description The MAX872/MAX874 precision 2.5V and 4.096V micro power voltage references consume a maximum of only 10^iA and operate from supply voltages up to 20V. The
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10fiA,
MAX872/MAX874
500pA
200mV
MAX872
MAX874
MAX872,
MAX874)
40ppm
AX872/M
MAX872CSA
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ab802
Abstract: 1N5150A AB810 1N5149 1N5151 1N5153 1N5155 1N5157 1N5150 1N5152
Text: 0258354 ADVANCED SEMICONDUCTOR ADVANCED SEMICO ND UC TOR 82D 00079 02 D T -0 7 -U Ï > F | o 2SÛ354 OOGODTT ñ § ~ Silicon Power Multiplier Diodes WAÎTS OUTPUT FREQ ^our MHz POWER OUTPUT P o u r im WATTS BREAKDOWN VOLTAGE Vb IMINI @10fiA 500 20.0 1000 11.0
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02Sfl3S4
1N5149
1N5150
1N5150A
1N5151
1N5152
1N5153
1N5152A
1N5153A
1N5154
ab802
AB810
1N5155
1N5157
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LTC13295
Abstract: No abstract text available
Text: r r i m LTC1329-10/ LTC1329-50/LTC1329A-50 m TECHNOLOGY M icropow er 8-Bit Current O utput D /A C onverter F€OTUR€S D € S C R IP T IO n • Guaranteed Precision Full-Scale DAC Output Current at 25°C: LTC1329A-50 50^iA±1% LTC1329-10 10fiA +3% LTC1329-50
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LTC1329-10/
LTC1329-50/LTC1329A-50
1329-10/LTC1329-50/LTC1329A-50
LTC1329-10
LTC1329-50/LTC1329A-50.
-15Vto
LTC1329-50/LTC1329A-50
LTC1329-10.
LTC1329
-N1N5817
LTC13295
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f-30MHz
Abstract: 2N2483 2N2484
Text: H o TRANSISTOR CHIPS HIGH GAIN - SMALL SIGNAL NPN n oo \ / 100% Probe Tested to These Parameters @ 25°C h FE @VCe = 5V 2N2483 @IC= 10fiA @lc= 100mA @lc = 1mA 40120 75 Min 175 Min VcBO . V CEO Volts Mm;- Volts Min. @lc = @IC= 10mA 10mA •e =0 60 iB=o 60 /
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S00fiA
30MHz
10fiA
100mA
10/1A
140KH2
2N2483
2N2484
f-30MHz
2N2483
2N2484
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ZU 107
Abstract: No abstract text available
Text: S OLITRON DEVICES INC bl D Ë J ö3t.öbOH DDD1S7Q 4 I ; N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET DRIVER ARRAY ABSOLUTE MAXIMUM RATINGS Vos Drain-Source Voltage . Vsd Source-Drain Voltage . Vdb Drain-Body Voltage . . . . Vsb Source-Body Voltage . . . . . . . . . .
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30Vdc
15Vdc
25Vdc
25Vdc
640mW
ZU 107
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LM373
Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica tions and consumer-oriented circuits to precision instrumentation and computer designs.
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92260-Fontenay-Aux-Roses
25956F
HX3866
LM373
MC1303L
LM566 "direct replacement"
transistor BD 540 LYS
MFC6030
LM566 equivalent
LM3039
SN72558P
LM370
SN72741P
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2C4031
Abstract: 2C4030 2C4032 2C4033 ic4010
Text: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal
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-T-33-0
2C4030
2C4031
2C4032
2C4033
150mA,
500mA,
ic4010
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Untitled
Abstract: No abstract text available
Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION v IT1700 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • Low ON-Resistance High Gain Low Noise Voltage High Input Impedance Low Leakage
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IT1700
-10mA
300ms
MM322
0D0CH51
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous
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BCW72LT1
-236A
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Untitled
Abstract: No abstract text available
Text: CAT93LC56/93LC56I I I I I I m a ll C R T R L Y 5 T ¡ S E M I C O N D U C T O R 2231 CALLE DE LUNA, SANTA CLARA. CA 95054 Telephone: 408 748-7700 CAT93LC56/93LC56I 2K BIT SERIAL E2PROM Preliminary DESCRIPTION FEATURES The C AT93LC 56 is a 3V CM OS 2K-bit serial
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CAT93LC56/93LC56I
AT93LC
O17090
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Untitled
Abstract: No abstract text available
Text: TP S 9111 CELLULAR SUBSCRIBER TERMINAL POWER SUPPLY S L V S 1 3 4 - N O VE M B E R 1996 PW PACKAGE TOP VIEW C o m p l e t e P o w e r S u p p l y for Cel l ul ar Handsets T hr e e L o w - D r o p o u t R e g u l a t o r s ( L D O s ) with 1 00-m V D r o p o u t
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28-Pin
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icl7211
Abstract: icl7212 ICL7211A ICL7135 74c157 maxim max 1987 DI-61 digital LM311 SID ICL7135CJI ICL7135CPI
Text: A I^X IA I 19-5041; Rev 0; 1987 41 A D ig it A /D C o n v e rte r w ith M u ltip le x e d BCD O utputs _ Foaturma ♦ Improved 2nd Source See our “Maxim Advantage^” Page 3 The ICL7135 has auto-zero accuracy better than 10/i.V,
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ICL7135
ICM7211A.
55-C/W
icl7211
icl7212
ICL7211A
74c157
maxim max 1987
DI-61 digital
LM311 SID
ICL7135CJI
ICL7135CPI
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2222 mps2222
Abstract: GES2222 MPS2222 ges 2222 GES2221 PN2222
Text: Dl SOLID STATE 3875081 G E SOLID STATE 3Û7S0Ô1 DOlTTbH 7 01E 17962 D y- i s 1 Signal Transistors GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Perform ance com parable to herm etic units * High Gain ■ L o w VCe sat ■ H igh Frequency
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75Dfil
GES2221,
GES2222,
MPS2222,
PN2222
PN2222
GES2222
MPS2222
2222 mps2222
ges 2222
GES2221
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Untitled
Abstract: No abstract text available
Text: MICROELECTRONICS XL93LC06-3 ExctUtnc» In £* Preliminary 256-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability PIN C O N F IG U R A TIO N S FEA TU R ES • S tate-of-th e-A rt A rch itecture — N o nvolatile d ata sto rag e — 3V to 5V o peration
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XL93LC06-3
256-Bit
100pF)
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Transistor BSX 24
Abstract: BSX24 7626 transistor
Text: *BSX 24 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L îfc Preferred device D is p o s itif recommandé General applications Applications générales Maximum power dissipation Case TO -18
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10fiA
Transistor BSX 24
BSX24
7626 transistor
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3B75
Abstract: 914-1Q 1N914E
Text: DIODES 5 Guaranteed 100% Probe Tested to These Parameters @ 25°C COMPLEMENTARY SWITCHING DIODES ‘ AVAILABLE IN 16 PfN DIP ARRAYS V rr Volts Min. @ I r=100/ í A 1N914 i te s te d o n i I s a m p le b a sis I CT •f Ir pAMax. @ VR Votts mA Min. @ V f=1.0V
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1N914
1N914-N
1N914-R*
1N914-RN
1N914-HV
1N914-B
914-1B
3B75
914-1Q
1N914E
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marking code SG transistors
Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Text: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier
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2SC4713K
2SC4774
SC-59)
SC-70)
2SC4774;
2SC4713K,
marking code SG transistors
ic MARKING FZ
2SC4774
marking code SG transistor
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diode sg 64
Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.
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SG5768/68A
SG5770/70A,
SG5772/72A,
SG5774/74A
SG25768,
SG25770,
SG6496/96A
500mA
14-PIN
diode sg 64
SG5774AJ
SG5772J
SG25768
sf 819 d
1N5772 JANTX
1N5768
SG25770J
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only ISO8O6 B U R R - B R O W N 0 E 1 www.burr-brown.com/databook/IS0806.Mml DESCRIPTION T he IS 0 8 0 6 is a low -pow er isolated sam pling A D C using state-of-the-art C M O S structures and high vo lt
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com/databook/IS0806
12-Bit
1500Vrms
28-PIN
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CY 6152
Abstract: MMDF4N02 1N4I48
Text: « ik Micro Linear A D V A N C E IN F O R M A T IO N _ ML4862 Battery Power Control 1C GEN ERAL DESCRIPTION FEATURES Th e M L4 8 6 2 is a com p lete solution for D C to D C co n ve r sion and p o w e r m anagem ent in multi-cell battery pow ered
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ML4862
32-PIN
CY 6152
MMDF4N02
1N4I48
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IC8013
Abstract: No abstract text available
Text: General Description Features T h e M IC 8 013 d riv e r is d e s ig n e d fo r use w ith liquid crysta l displays. A seria l da ta inte rface is use d to load an inte rnal register, w hich in turn co n tro ls th e s e g m e n t ou tputs. A FIFO ou tput allow s m u ltip le c h ip s to be casca ded an d p ro
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S4520
MIC8013-01
40-Pin
IC8013
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ICL7664
Abstract: No abstract text available
Text: J V \ Æ X A J V \ P ro g ram m ab le N e g a tiv e Voltage R e g u la to r _General Description The ICL7664 is a high efficiency negative voltage regulator with a quiescent current of less than 10mA. The output voltage is set by two external resistors to
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ICL7664
to-16V.
10fiA
ICL7664A
ICL7663
ICL7660
100/jA,
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MOSFET 4166
Abstract: MAX774EPA
Text: 19-0191; Rev 1; 3/94 jv \ s \ y u jv \ -5V/-12V/-15V or Adjustable, High-Efficiency, Low I q Inverting DC-DC Controllers These ICs also use tiny external components; their high switching frequency up to 300kHz allows for less than 5mm diameter surface-mount magnetics.
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-5V/-12V/-15V
AX774/M
AX775/M
AX776
100nA
300kHz)
MAX775CPA
MAX775CSA
MAX775C/D
MOSFET 4166
MAX774EPA
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24so2
Abstract: HSCH9201
Text: H E W L E T T - P A C K A R D n C M PN TS HEW LETT 'Í2J P A C K A R D SGE D 4447SÖ4 Q0D5bS3 G HSCH-9101 HSCH-9201 HSCH-9251 TXVW-9101 TXVW-9201 TXVW-9251 GaAS BEAM LEAD SCHOTTKY BARRIER DIODES Features GOLD TRI-METAL SYSTEM For Improved Reliability 2S0m.QE
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4447S
HSCH-9101
HSCH-9201
HSCH-9251
TXVW-9101
TXVW-9201
TXVW-9251
MIL-S-19500
24so2
HSCH9201
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