Untitled
Abstract: No abstract text available
Text: MC68302RC16 1/2 IL08 * ( VDD =+5V) C-MOS INTEGRATED MULTIPROTOCOL PROCESSOR -BOTTOM VIEW- N M L K J H G F E D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 PIN NO. 1A 1B 1C 1D 1E 1F 1G 1H 1J 1K 1L 1M 1N 2A 2B 2C 2D 2E 2F 2G 2H 2J 2K 2L 2M 2N 3A 3B 3C 3D 3E
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MC68302RC16
D0-D15
PB8-PB11
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83 fkm 592
Abstract: cd 6283 ic wiring diagram Double Acting Cylinder reed relay 3570 1301 151 d-J79 CDQ2B32-20D ECDQ2A D-J79W smc cq2b63 10 35L W1
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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double acting cylinder
Abstract: smc d-f9n SMC D-A73 D-A80H D-J79W 83 fkm 592 D-A73 CDQ2B32-20D smc d-j79 reed relay 3570 1301 151
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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smc d-f9p
Abstract: smc d-a73c SMC D-A73 cd 6283 ic smc d-f9n D-A73 M24 8.8 bolt smc d-j79 ROD 486 5000 circuit diagram for cd 6283
Text: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm
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GUF10M
Abstract: GUF10A 202E DO-204AL GUF10
Text: GUF10A THRU GUF10M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of
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GUF10A
GUF10M
DO-41\DO-204AL
MIL-S-19500
/10sec/0
UL-94
1-Jul-03
GUF10M
202E
DO-204AL
GUF10
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Untitled
Abstract: No abstract text available
Text: RGP10A THRU RGP10M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of
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RGP10A
RGP10M
MIL-S-19500
/10sec/0
DO-41\DO-204AL
UL-94
1-Jul-03
1-Jul-03
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GP10M
Abstract: GP 140 GP10B
Text: GP10A THRU GP10M SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500
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GP10A
GP10M
MIL-S-19500
/10sec/0
DO-41\DO-204AL
UL-94
1-Jul-03
1-Jul-03
GP10M
GP 140
GP10B
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6n8p
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44322161, 44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322161 is a 2,097,152-word by 16-bit, the µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is
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PD44322161,
32M-BIT
PD44322161
152-word
16-bit,
PD44322181
18-bit,
PD44322321
576-word
6n8p
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6N8P
Abstract: 1N 9a
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44322163, 44322183, 44322323, 44322363 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD44322163 is a 2,097,152-word by 16-bit, the µPD44322183 is a 2,097,152-word by 18-bit, µPD44322323 is a
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PD44322163,
32M-BIT
PD44322163
152-word
16-bit,
PD44322183
18-bit,
PD44322323
576-word
6N8P
1N 9a
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marking 1P
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD44321162, 44321182, 44321322, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321162 is a 2,097,152-word by 16-bit, the µPD44321182 is a 2,097,152-word by 18-bit, the µPD44321322 is a 1,048,576-word by 32-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static
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PD44321162,
32M-BIT
PD44321162
152-word
16-bit,
PD44321182
18-bit,
PD44321322
576-word
marking 1P
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44321161, 44321181, 44321321, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321161 is a 2,097,152-word by 16-bit, the µPD44321181 is a 2,097,152-word by 18-bit, the µPD44321321 is a 1,048,576-word by 32-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static
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PD44321161,
32M-BIT
PD44321161
152-word
16-bit,
PD44321181
18-bit,
PD44321321
576-word
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4MX9
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
-FC25
4MX9
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k7r161882b
Abstract: K7R160982B K7R161882B-FC25 K7R163682B K7R163682B-FC16 K7R163682B-FC20 K7R163682B-FC25
Text: K7R163682B K7R161882B K7R160982B K7R160882B Advance 512Kx36 & 1Mx18 & 2Mx9 & 2Mx8 QDRTM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit, 2Mx8-bit QDRTM II b2 SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. Oct. 17. 2002
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K7R163682B
K7R161882B
K7R160982B
K7R160882B
512Kx36
1Mx18
512Kx36-bit,
1Mx18-bit,
k7r161882b
K7R160982B
K7R161882B-FC25
K7R163682B
K7R163682B-FC16
K7R163682B-FC20
K7R163682B-FC25
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Untitled
Abstract: No abstract text available
Text: 50,8 + 0,2 1 1A IB 1C ID 2 3 1J 2CDL IK 2F 1M 2E IN 1DP PIN PIN PIN PIN PIN 25 7A 7B 7C 7D 26 7J 7K 7M 7N 27 11D 11C 11G 11B 4 2H 2G 2Q 2P 28 11DP he 11F 11A 5 2A 2B 2C 2D 6 7 2 J 3CDL 2K 3F 2M 3E 2N 2DP 29 30 31 10D lOCOL 10DP 10C 9C 10G 10F 9B 10B 10A 9A
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is a fast-page dynamic RAM mod ule organized as 1,048,576 words by 36 bits and de signed to operate from a single +5-volt power supply.
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MC-421000A36
36-Bit
MC-421000A36
-421000A
OP-16
iPD421000GX
iPD424400GS
MC-42100M36BT7FT
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Rm73B1E
Abstract: RM73 RM73B2A RM73B2H RM73B3A RM73B2B RN73E2A koa RM73 RM73B2E KOA Speer Electronics RM73B1
Text: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available
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585//in/15
430/iin/11/m
00D1721
Rm73B1E
RM73
RM73B2A
RM73B2H
RM73B3A
RM73B2B
RN73E2A
koa RM73
RM73B2E
KOA Speer Electronics RM73B1
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VW3A
Abstract: S1139 30H1
Text: i i/e 508* i g A3H JO 133HS 31V0S 9NIMVdQ U3W01SÌD 868e^l°Q) 6AA00 IV ON 3Q03 39V0 V y]9wnN idvd 9 319Vi ]3S 1H9I3W oszs-n I 3ZI S ( 3dÀ1-A 90d) A19H3SSV 9NISÌ10H dVO NO111SOd2I S3IN3S (S20' )fr9'0 3WVN A{|a|psuuo^]_[ 31 .¿C./SCA/ 9NISnOH 319V1 33S
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133HS
31V0S
U3W01S
6AA00
319V1
8995-80I
319Vi
310V1
J31VW
H19N31
VW3A
S1139
30H1
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bd 9d
Abstract: SN74ALS29841
Text: SN74ALS29841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS S D A S 1 4 9 A - JU N E 1 9 8 8 - REVISED JA N U A R Y 1995 3-State Buffer-Type Outputs Drive Bus Lines Directly DW OR NT PACKAGE TOP VIEW Bus-Structured Pinout m Provides Extra Bus-Driving Latches
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SN74ALS29841
10-BIT
300-mll
bd 9d
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Untitled
Abstract: No abstract text available
Text: SD57045 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENTTHERM AL STABILITY COMMON SOURCE CONFIGURATION • Pout = 45 W PEP with 13 dB gain @ 945 MHz . B eO FR EE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel
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SD57045
SD57045
TSD57045
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Untitled
Abstract: No abstract text available
Text: 1. M e c h a n ic a l D im e n s i o n s : 2 . S ch e m atic: o- Top view C3- 3. E l e c t r i c a l CG O OCL: LT> 1 .0 m H ± 1 0% R a te d ± 0.10 o a D 5 ,0 0 ± 0 .3 0 Q: O O ^ lo -H 10 1 .Q K H z I: 2 6 0 m A d c DOR: 2 .9 4 J E 0 0 .6 5 S p e c ific atio n s:
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260mAdc
796KHz
MIL-STD-202G.
UL94-V-0
E151556
XFRCHB75
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LM3914
Abstract: 00b2
Text: UNCONTROLLED DOCUMENT PART NUMBER SSA—B1 01 4 1W—MOD REV, A B 50.55 [1.990] 45.7Z [1,800] 4.06 [0,160] 10 PLS. 1.27 [0,050] I : I II II II I I I I 2.79 [0.110] DATE 9.28.00 11.12.02 1.02 [0.040] 3.81 [0.150] I C 03.046 [00.120] _ (2 PLS.) i B E.C.N. NUMBER AND REVISION COMMENTS
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LM3914
00b2
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diode 060
Abstract: No abstract text available
Text: F U JI 2-Pack IGBT 600 V 100 A 2MBI100L-060 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier
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100L-060
diode 060
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).
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SB20-05Z
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Untitled
Abstract: No abstract text available
Text: [ O A _RK73B fe a tu re s • R u 0 2 thick film resistor elem ent •A nti-leaching nickel barrier terminations • 9 0 /1 0 solder plated terminations, standard •A vailable in 100% tin terminations no lead • Also available with epoxy bondable palladium silver
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RK73B
750mW
1000mW
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