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    EIA-364-65A

    Abstract: EIA364-65A IEC-60512-5 test 9b h155 IEC-60512-5 test 9a 6D120
    Text: PRODUCT SPECIFICATION 製品規格 108-78472 10AUG07 Rev A. Super Low Profile SIM コネクタ H=1.55MAX （Super Low Profile SIM Connector H=1.55MAX） 1. 適用範囲 1.1 1.1 内容 本規格はSUPER LOW PROFILE SLIDING SIM H=1.55の製品性能試験方法、品質保証の必要条件


    Original     		PDF 10AUG07 55MAX 55MAX 120sec 50sec 80sec 250MAX EIA-364-65A EIA364-65A IEC-60512-5 test 9b h155 IEC-60512-5 test 9a 6D120

    P1015-BD

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF 10-Aug-07 P1015-BD MIL-STD-883 XP1015-BD-000V XP1015-BD-EV1 XP1015

    0.16 VDE Wire datasheet

    Abstract: VDRHE 2381 615 E98144 Varistor 271
    Text: 2381 58. ./VDRH.E Vishay BCcomponents High Surge Suppression Varistors FEATURES RoHS • Zinc oxide disc, epoxy coated COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATION • Supression of transients


    Original     		PDF 2002/95/EC 2002/96/EC UL94V-0. 08-Apr-05 0.16 VDE Wire datasheet VDRHE 2381 615 E98144 Varistor 271

    AN609

    Abstract: Si9424BDY
    Text: Si9424BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9424BDY AN609 10-Aug-07

    133532

    Abstract: AN609 Si9410BDY
    Text: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9410BDY AN609 10-Aug-07 133532

    7834

    Abstract: vishay MOSFET AN609 SiA811DJ 149494
    Text: SiA811DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SiA811DJ AN609 10-Aug-07 7834 vishay MOSFET 149494

    TXC Corporation

    Abstract: Crystal Oscillator TXC
    Text: TXC CORPORATION 4F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING CXO 5.0*3.2 NOMINAL FREQ.


    Original     		PDF 000000MHz 7C24000012 MIL-STD-202F MIL-STD-883E 1000Hrs C5023 RH100% 240Hrs C6701 TXC Corporation Crystal Oscillator TXC

    XB1005-BD

    Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
    Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing


    Original     		PDF P1005-BD 10-Aug-07 MIL-STD-883 XP1005-BD-000V XP1005-BD-EV1 XP1005 XB1005-BD DM6030HK P1005-BD TS3332LD XP1005-BD XU1001-BD

    CMM6027-SC

    Abstract: No abstract text available
    Text: DC-4 GHz High Dynamic Range Power Amplifier CMM6027-SC August 2007 - Rev 10-Aug-07 Features 46 dBm Output lP3 27 dBm P1dB 15 dB Gain @ 2GHz 2.8 dB Noise Figure RoHS Compliant SOT-89 Package Single Positive Power Supply 3V ~ 5V MTTF > 100 Years General Description


    Original     		PDF CMM6027-SC 10-Aug-07 OT-89 CMM6027-SC supMM6027-SC PB-CMM6027-SC-00C0

    2231 0048

    Abstract: AN609 Si9948AEY 17818 matching mosfet
    Text: Si9948AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9948AEY AN609 10-Aug-07 2231 0048 17818 matching mosfet

    AN609

    Abstract: Si9433BDY
    Text: Si9433BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9433BDY AN609 10-Aug-07

    4891

    Abstract: 7476 AN609 Si9926BDY 45-4003 112-330
    Text: Si9926BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9926BDY AN609 10-Aug-07 4891 7476 45-4003 112-330

    on 4409

    Abstract: transistor on 4409 7434 AN609 Si9434BDY
    Text: Si9434BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9434BDY AN609 10-Aug-07 on 4409 transistor on 4409 7434

    7404

    Abstract: 7404 not 7404 data sheet AN609 Si8902EDB
    Text: Si8902EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8902EDB AN609 10-Aug-07 7404 7404 not 7404 data sheet

    C 6090

    Abstract: 2437 power mosfet 7400 spice model c 2437 power mosfet data AN609 Si9435BDY
    Text: Si9435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9435BDY AN609 10-Aug-07 C 6090 2437 power mosfet 7400 spice model c 2437 power mosfet data

    000-7159-30

    Abstract: EDSO-G16 000-7430-30
    Text: more than you expect Discrete Single Port 10/100 Base-T EDSO-G16 LANDatacom Features Common Electrical Characteristics Inductance 350µH Min. Dielectic Rating 1500VAC Transmit Turns Ratio 1CT:1CT Receive Turns Ratio 1CT:1CT Part Number 000-7090-30 000-7159-30


    Original     		PDF EDSO-G16 1500VAC 100kHz, 1M-100MHz 10-Aug-07 000-7159-30 EDSO-G16 000-7430-30

    mmic SOT-89 07

    Abstract: P0* DBM SOT89 CMM6027-SC 6027g
    Text: DC-4 GHz High Dynamic Range Power Amplifier CMM6027-SC August 2007 - Rev 10-Aug-07 Features 46 dBm Output lP3 27 dBm P1dB 15 dB Gain @ 2GHz 2.8 dB Noise Figure RoHS Compliant SOT-89 Package Single Positive Power Supply 3V ~ 5V MTTF > 100 Years General Description


    Original     		PDF 10-Aug-07 CMM6027-SC OT-89 CMM6027-SC PB-CMM6027-SC-00C0 mmic SOT-89 07 P0* DBM SOT89 6027g

    ACT8700

    Abstract: TQFN44-24
    Text: ACT8700 Product Brief, 10-Aug-07 Advanced Product Information–All Information Subject to Change Four Channel Integrated Power Management IC for Handheld Portable Equipment FEATURES GENERAL DESCRIPTION • Multiple Patents Pending  Li+ Battery Charger with Integrated MOSFET


    Original     		PDF ACT8700 10-Aug-07 ACT8700 100mA/500mA 350mA 500mA TQFN44-24

    Untitled

    Abstract: No abstract text available
    Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 7 C 0 E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - R E V IS IO N S RESERVED. GP C O R P O R A T IO N . 00 D E S C R IP T IO N 03 1O3 R P ER JDP CWR


    OCR Scan     		PDF 10AUG07 HDE-20, AR2000

    Untitled

    Abstract: No abstract text available
    Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC + 0.38 - 0 .0 0 + .015 RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 AA D E S C R IP T IO N


    OCR Scan     		PDF 10AUG07 16AUG

    Untitled

    Abstract: No abstract text available
    Text: TH I S DRAW ING E i IS U NP UBL I S HE D. BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 SEE 20 R E L E A S E D FOR P U B L I C A T I O N DETA I L CORPORATION. ALL RIGHTS REV 1SI ONS m DESCR1PTION LOC RE S E RV E D. p LTR DATE ECN DWN APVD 04 REVI SED


    OCR Scan     		PDF 02FEB ECR-07-01480 ECR-07-0 ECR-07-002702 ECR-09- 70X0700

    HDE-20

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . •0.25 M A X [. 0 1 0 ] D r - 3 _ 3 Z D E T A IL SCALE


    OCR Scan     		PDF 31MAR2000 EC0-07- 10AUG07 EC0-09-021 15SEP09 MIL-G-45204, QQ-N-290. AR745270-6 HDE-20, HDE-20

    Untitled

    Abstract: No abstract text available
    Text: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 2 3 4 E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. GP C O R P O R A T IO N . R E V IS IO N S 00 D E S C R IP T IO N L2 .9 76 .9 6 6 " .1O


    OCR Scan     		PDF 10AUG07 HDE-20 AR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T RESERVED. C O R P O R A T IO N . R E V IS IO N S 50 AF D E S C R IP T IO N REVISED 1 FITS 0 . 8 1 + 0 . 0 2 5


    OCR Scan     		PDF 10AUG07