CSD10060A
Abstract: CSD10060G CSD10060
Text: CSD10060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=10A Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD10060
CSD10060G
CSD10060A
CSD10060,
CSD10060A
CSD10060G
CSD10060
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Untitled
Abstract: No abstract text available
Text: CSD10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10060â
O-263-2
O-220-2
CSD10060
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MYXDS0600-10DA0
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic SMD MYXDS0600-10DA0 y r a in Product Overview Features Benefits • High voltage 600V isolation in a small package outline • Essentially no switching losses • Higher efficiency • High current 10A
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MYXDS0600-10DA0
MYXDS0600-10DA0
silicon carbide
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MYXDB0600-10CEN
Abstract: silicon carbide
Text: SiC Schottky Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • Higher efficiency • High current 10A • High temperature 210°C
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MYXDB0600-10CEN
MYXDB0600-10CEN
silicon carbide
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MYXDS0600-10AAS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 600 Volt 10 Amp Hermetic MYXDS0600-10AAS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation in a small package outline • Higher efficiency • High current 10A • High temperature 210°C
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MYXDS0600-10AAS
O-257
MYXDS0600-10AAS
silicon carbide
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MYXD30600-10CEN
Abstract: silicon carbide
Text: SiC Schottky 3 Phase Diode Bridge 600 Volt 10 Amp Hermetic MYXD30600-10CEN y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 600V isolation • 6 off high current 10A diodes • High temperature 210°C • HMP solder tinned leads available
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MYXD30600-10CEN
O-258
MYXD30600-10CEN
silicon carbide
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Untitled
Abstract: No abstract text available
Text: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODES 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high
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1N3305B
1N3350B
1N3305RB)
21-March
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Untitled
Abstract: No abstract text available
Text: 1N3305B THRU 1N3350B w w w. c e n t r a l s e m i . c o m SILICON ZENER DIODE 6.8 VOLT THRU 200 VOLT 50W, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N3305B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, designed for high
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1N3305B
1N3350B
1N3305RB)
1N3306B
1N3307B
1N3308B
1N3309B
1N3310B
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PCIH47M400A1
Abstract: 200W AMPLIFIER 47-pin TPDC200P-48B TPDC200P-48B-490 12V 50A 10A 600 VOLT DIODE 12V 30A diode
Text: TOTAL POWER INT'L 36-72VDC INPUT RANGE DC-DC CONVERTER HOT-SWAP CompactPCI QUAD OUTPUT 200 WATTS CURRENT SHARING SWITCHING POWER SUPPLIES TPDC200P-48B SERIES FEATURES: 200W IN 3U X 8HP EUROCARD PACKAGE CompactPCI DC-DC CONVERTER INTERNAL OR-ING DIODES FOR
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36-72VDC
TPDC200P-48B
EN55022/FCC
48Vdc.
47-pin
PCIH47M400A1.
IEC950
EN55022
PCIH47M400A1
200W AMPLIFIER
TPDC200P-48B-490
12V 50A
10A 600 VOLT DIODE
12V 30A diode
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lx2400
Abstract: LX2400ILG IEC61215 ul 1741 photovoltaic module 5w LX2400 Microsemi photovoltaic module ul 1741 download pv dc/ac solar pv inverter
Text: PRODUCT BRIEF LX2400 IDEALSolar Bypass Diode DESCRIPTION Solar Bypass Diode for Photovoltaic PV Modules with Industry’s Lowest Forward Voltage Drop and Lowest Operating Temperature The LX2400 IDEALSolarTM Bypass Diode with Microsemi’s patented CoolRUNTM technology provides a bypass path in PV
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LX2400
LX2400
120VAC
240VAC
LX2400ILG
LX2400ILG
IEC61215
ul 1741
photovoltaic module 5w
LX2400 Microsemi
photovoltaic module
ul 1741 download
pv dc/ac
solar pv inverter
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260-8P
Abstract: neda 13f BUSSMAN Fuse 250V 2A decibel meter Bussman 260-8RT 2A600V
Text: ® 260-8 & 260-8P Analog VOM When a Digital Multimeter won’t do the Job Professionals have long recognized that a Simpson 260 analog meter is superior to the best DMM when monitoring fluctuating trends and rates. The 260-8 features more attributes than its predecessors. Standard and highenergy fusing in conjunction with diode network meter movement protection makes
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260-8P
260-8PRT,
18x14x8cm)
neda 13f
BUSSMAN Fuse 250V 2A
decibel meter
Bussman
260-8RT
2A600V
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Untitled
Abstract: No abstract text available
Text: CSD20060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 20A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD20060â
O-247-3
CSD20060
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D 16027 G
Abstract: No abstract text available
Text: CSD20060 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=600V IF=20A Features Benefits _ • 600 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20060
CSD20060D
CSD20060,
D 16027 G
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Untitled
Abstract: No abstract text available
Text: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •
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OCR Scan
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M3D2S71
HGTH12N40C1D,
HGTH12N40E1D
HGTH12N50C1D,
HGTH12N50E1D
O-218AC
40E1D/50E1D
D/50C1D
AN7254
AN7260)
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SML10EUZ12K
Abstract: 50V 10A ultra fast diode
Text: SML10EUZ12K Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12K
10EUZ12K
SML10EUZ12K
50V 10A ultra fast diode
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Untitled
Abstract: No abstract text available
Text: SML10SIC03YC 4.83 0.190 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) Silicon Carbide Schottky Diode 300 Volt, 2X10 Amp TECHNOLOGY 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420)
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SML10SIC03YC
O-257
2X10A
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Untitled
Abstract: No abstract text available
Text: CSD10030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=10A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD10030
CSD10030A
CSD10030,
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Untitled
Abstract: No abstract text available
Text: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10030â
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CSD10030
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50V 10A ultra fast diode
Abstract: SML10EUZ12D
Text: SML10EUZ12D Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp TECHNOLOGY Back of case live Cathode SML 10EUZ12D The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12D
10EUZ12D
curren56
50V 10A ultra fast diode
SML10EUZ12D
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10a 1200v diode
Abstract: 12 VOLT 10 AMP smps
Text: SML10EUZ12K Ultrafast Recovery Diode 1200 Volt, 10 Amp MECHANICAL DATA Dimensions in mm inches Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising
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SML10EUZ12K
10EUZ12K
cir602)
10a 1200v diode
12 VOLT 10 AMP smps
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10A 600 VOLT DIODE
Abstract: SML10EUZ12SC
Text: SML10EUZ12SC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12SC The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12SC
10EUZ12SC
voltage106)
10A 600 VOLT DIODE
SML10EUZ12SC
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TO247 package
Abstract: SML10EUZ12BC
Text: SML10EUZ12BC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12BC 1 - Anode 1 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12BC
10EUZ12BC
TO247 package
SML10EUZ12BC
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D 16027 G
Abstract: No abstract text available
Text: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20030
CSD20030D
CSD20030,
D 16027 G
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10N40E
Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Text: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features
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OCR Scan
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M3D2271
00502L
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
HGTP10N40E1D,
HGTP10N50E1D
10N40E
10n40e1d
HGTP10N40C1D
HGTP10N50C1D
ls25 diode
diode OA-75
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