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    10N65 Search Results

    10N65 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TK110N65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    10N65 Price and Stock

    onsemi NVB110N65S3F

    MOSFET N-CH 650V 30A D2PAK-3
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    DigiKey NVB110N65S3F Cut Tape 1,535 1
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    NVB110N65S3F Digi-Reel 1,535 1
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    NVB110N65S3F Reel 800 800
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    Avnet Americas NVB110N65S3F Reel 0 Weeks, 2 Days 216
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    NVB110N65S3F Reel 18 Weeks 800
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    Mouser Electronics NVB110N65S3F 1,231
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    Rochester Electronics NVB110N65S3F 30,140 1
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    Avnet Silica NVB110N65S3F 19 Weeks 800
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    EBV Elektronik NVB110N65S3F 20 Weeks 800
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    Flip Electronics NVB110N65S3F 2,400
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    STMicroelectronics STFI10N65K3

    MOSFET N-CH 650V 10A I2PAKFP
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    DigiKey STFI10N65K3 Tube 1,499 1
    • 1 $3.33
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    onsemi NTHL110N65S3F

    MOSFET N-CH 650V 30A TO247-3
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    DigiKey NTHL110N65S3F Tube 895 1
    • 1 $5.21
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    Avnet Americas NTHL110N65S3F Tube 22 Weeks 450
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    Mouser Electronics NTHL110N65S3F 10,621
    • 1 $5.14
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    Newark NTHL110N65S3F Bulk 445 1
    • 1 $6.15
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    Richardson RFPD NTHL110N65S3F 450
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    Avnet Silica NTHL110N65S3F 23 Weeks 30
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    onsemi FCH110N65F-F155

    MOSFET N-CH 650V 35A TO247
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    DigiKey FCH110N65F-F155 Tube 781 1
    • 1 $5.2
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    Mouser Electronics FCH110N65F-F155 444
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    Newark FCH110N65F-F155 Bulk 450
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    Rochester Electronics FCH110N65F-F155 70 1
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    TME FCH110N65F-F155 1
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    Richardson RFPD FCH110N65F-F155 450
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    Avnet Silica FCH110N65F-F155 17 Weeks 30
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    EBV Elektronik FCH110N65F-F155 18 Weeks 30
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    onsemi NTB110N65S3HF

    MOSFET N-CH 650V 30A D2PAK-3
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    DigiKey NTB110N65S3HF Digi-Reel 780 1
    • 1 $6.05
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    NTB110N65S3HF Cut Tape 780 1
    • 1 $6.05
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    Avnet Americas NTB110N65S3HF Reel 0 Weeks, 2 Days 114
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    NTB110N65S3HF Reel 25 Weeks 800
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    Mouser Electronics NTB110N65S3HF 800
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    Newark NTB110N65S3HF Cut Tape 778 1
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    Rochester Electronics NTB110N65S3HF 576 1
    • 1 $3.53
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    Richardson RFPD NTB110N65S3HF 800
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    Avnet Silica NTB110N65S3HF 26 Weeks 800
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    EBV Elektronik NTB110N65S3HF 27 Weeks 800
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    Flip Electronics NTB110N65S3HF 640
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    Wuhan P&S NTB110N65S3HF 1,949 1
    • 1 $8.45
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    • 100 $5.4
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    Find more 10N65 price and stock on Findchips.com

    10N65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n65

    Abstract: tf 10n65
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65 10N65 QW-R502-588 tf 10n65

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-hat QW-R02-755

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-T O-220F1 QW-R02-755

    10n65

    Abstract: 10N65G-TA3-T utc10n65
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche


    Original     		PDF 10N65 O-220 10N65 O-220F O-220F1 O-263 QW-R502-588 10N65G-TA3-T utc10n65

    10n65

    Abstract: UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green


    Original     		PDF 10N65Y0 200C1002) 200C1003)

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K-MT Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K-MT is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N65K-MT 10N65K-MT 10N65KL-TA3-T 10N65KG-TA3-T O-220 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T

    "7 Segment Display"

    Abstract: light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0
    Text: Plastic fiber optic sensors Series 10 Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm Standard PNP light/dark operate FVDK 10P60Y0 Remote Teach-in FVDK 10P65Y0 4102010 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm


    Original     		PDF 10P60Y0 10P65Y0 10N60Y0 10N65Y0 "7 Segment Display" light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0

    f10n65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65 10N65 O-220 O-220F1 O-220F2 O-220F QW-R502-588 f10n65

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green


    Original     		PDF 10N65Y0 200C1002) 200C1003)

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green


    Original     		PDF 10N65Y0 200C1002) 200C1003)

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-hat QW-R02-755

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche


    Original     		PDF 10N65 10N65 O-220 O-220F O-220F1 QW-R502-588

    on/927 DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65Z 10N65Z QW-R502-927, on/927 DIODE

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 10N65Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator


    Original     		PDF 10N65Y0 200C1002) 200C1003)

    10N65T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65T Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65T 10N65T 10N65TL-TF3-T 10N65TG-TF3-Tat QW-R502-878

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N65Z-Q Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N65Z-Q 10N65Z-Q QW-R502-980.

    light dark sensor circuit

    Abstract: "7 Segment Display" baumer fvdk 10p60y0 "Infrared LED" Teac* baumer 7-SEGMENT fvdk 10p60y0 baumer electric FVDK 10N60Y0 baumer Baumer Electric
    Text: Plastic fiber optic sensors Series 10 PNP Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm light/dark operate Standard Remote Teach-in FVDK 10P60Y0 FVDK 10P65Y0 4102010 4102009 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm


    Original     		PDF 10P60Y0 10P65Y0 10N60Y0 10N65Y0 light dark sensor circuit "7 Segment Display" baumer fvdk 10p60y0 "Infrared LED" Teac* baumer 7-SEGMENT fvdk 10p60y0 baumer electric FVDK 10N60Y0 baumer Baumer Electric

    fvdk 10p60y0

    Abstract: 10P60Y0 baumer fvdk 10p60y0
    Text: Photoelectric sensors FVDK 60 sample drawing sample picture general data actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green


    Original     		PDF 200C1002) 200C1003) 10N60Y0 10N65Y0 10P60Y0 10P60Y0/KS35A 10P65Y0 10P65Y0/KS35A fvdk 10p60y0 baumer fvdk 10p60y0

    10N65K3

    Abstract: No abstract text available
    Text: 10N65K3, 10N65K3, 10N65K3, 10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT 10N65K3 3 D2PAK


    Original     		PDF STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 O-220FP, O-220 STB10N65K3 STF10N65K3 O-220FP STFI10N65K3 10N65K3

    uc3973

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UC3973 LINEAR INTEGRATED CIRCUIT LOW COST POWER-SAVING MODE PWM CONTROLLER FOR FLYBACK CONVERTERS  DESCRIPTION The UC3973 is a high performance current mode PWM controller ideally suited for low standby power. Low VDD startup


    Original     		PDF UC3973 UC3973 QW-R103-086

    Untitled

    Abstract: No abstract text available
    Text: 10N65K3 045Y N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3 Power MOSFET in a TO-220FP narrow leads package Datasheet − preliminary data Features Order code VDS 10N65K3(045Y) 650 V RDS(on) max ID PTOT 1Ω 10 A 35 W • 100% avalanche tested


    Original     		PDF STF10N65K3 O-220FP O-220FP AM15572v1 DocID024521

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 60 sample drawing sample picture electrical data response time / release time < 0,5 ms voltage supply range +Vs 10 . 30 VDC current consumption max. 50 mA voltage drop Vd < 1 VDC output function light / dark operate switchable


    Original     		PDF 10N60Y0 10N65Y0 10P60Y0 10P60Y0/KS35A 10P65Y0 10P65Y0/KS35A

    10N65

    Abstract: Power MOSFET Wafer 3VD446650YL
    Text: 3VD446650YL 3VD446650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD446650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;


    Original     		PDF 3VD446650YL 3VD446650YL O-220 10N65; 10N65 Power MOSFET Wafer