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    109 TRANSISTOR 33 DB Search Results

    109 TRANSISTOR 33 DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    109 TRANSISTOR 33 DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF5811

    Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    AT-41411

    Abstract: AT-41411-BLK AT-41411-TR1 S21E
    Text: Surface Mount Low Noise Silicon␣ Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.8 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz


    Original     		PDF AT-41411 AT-41411 OT-143 OT-143 RN/50 AT-41411-BLK AT-41411-TR1 S21E

    SOT-143 MARKING 550

    Abstract: AT41411 AT-41411 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor
    Text: Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth


    Original     		PDF AT-41411 OT-143 AT-41411 AT41411 RN/50 5965-8924E SOT-143 MARKING 550 AT-41411-BLK AT-41411-TR1 S21E Transistor General Purpose Transistor

    TRANSISTOR BV 32

    Abstract: Bv 42 transistor PH1617-30 K010 G177
    Text: an AMP ZE comDanv r = Wireless Bipolar Power Transistor, 1.6 - 1.7 GHz 30W PHI 617-30 Features l l l l l Designed for Linear Amplifier Applications -30 dBc Typ 3rd IMD at 30 Watts PEP Common Emitter Class AB Operation Internal Input Impedance Matching Diffused Emitter Ballasting


    Original     		PDF

    AT41586

    Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT41586 5965-8908E AT-41586-BLK AT-41586-TR1 S21E

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 5963-7303E 5965-8908E AT-41586-BLK AT-41586-TR1 S21E 41586

    AT-41586

    Abstract: AT-41586-BLK AT-41586-TR1 S21E
    Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option


    Original     		PDF AT-41586 AT-41586 AT-41586-BLK AT-41586-TR1 S21E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) MRF5811LT1

    MRF5811L

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion High Gain


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) Vol98 MRF5811LT1 MRF5811L

    MRF5811

    Abstract: ADC IC 0808
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1 MRF5811LT1 MRF5811 ADC IC 0808

    AT41586-TR1

    Abstract: uj3a
    Text: wem HEW LETT* ISSI PACKARD Low Cost General Purpose Transistors Technical Data AT-41586 Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586 AT-41586-TR1 6903-73O3E AT41586-TR1 uj3a

    transistor 86 y 87

    Abstract: No abstract text available
    Text: WJ-EA41 sBasm « « . ‘Al m ! , MIS _wt * j4* Se» '- .i I; 1000 to 4000 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ WIDE BANDWIDTH: 1000 TO 4000 MHz MEDIUM OUTPUT POWER: +12 dBm TYP. LOW NOISE: 3.5 dB (TYP.) MEDIUM THIRD ORDER INTERCEPT POINT: +23 dBm (TYP.)


    OCR Scan     		PDF WJ-EA41 transistor 86 y 87

    AT-60535

    Abstract: No abstract text available
    Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz


    OCR Scan     		PDF 0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478

    AVANTEK transistor

    Abstract: No abstract text available
    Text: avantek O in c SCIE » AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor avantek ^pS>-o£ Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64023 AT-64023 AVANTEK transistor

    surface mount transistor A40

    Abstract: transistor BC 157
    Text: W J - A 4 / S M A 4 500 TO 4000 MHz TO-8 CASCAD ABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 500-4000 MHz HIGH GAIN -TWO STAGES: 14.5 dB TYP. HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) Outline Drawings A40 Specifications’* 0.450 n


    OCR Scan     		PDF 50-ohm WJ-CA40 WJ-A40 surface mount transistor A40 transistor BC 157

    avantek

    Abstract: Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. AT-64023 Avantek, Inc Avantek S
    Text: AVANTEK I NC 20E D AVANTEK • im n tb GOObSSfl AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor □ * Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64023 AT-64023 avantek Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. Avantek, Inc Avantek S

    PH1819-30

    Abstract: PH1819
    Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching


    OCR Scan     		PDF PH1819-30 PH1819-30 PH1819

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ • 7 1« CPIPNTS b lE HEW LETT mPPM P I> ■ MM475A4 ME? AT-00510 Up to 4 GHz General Purpose Silicon Bipolar Transistor a c k a rd Features • • • • • OOI OMTB 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical Gi hb at 2.0 GHz


    OCR Scan     		PDF MM475A4 AT-00510 AT-00510

    Untitled

    Abstract: No abstract text available
    Text: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz


    OCR Scan     		PDF AT-01672 AT-01672 duced70

    Untitled

    Abstract: No abstract text available
    Text: WJ-EA54-3 5 to 300 MHz TO-5 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ LOW NOISE: 2.7 dB TYP. VERY HIGH GAIN: 36.5 dB (TYP.) LOW COST VERY SMALL SIZE: TO-5 PACKAGE Outline Drawings Specifications* EA54-3 Guaranteed Typical Characteristics .360 ± 002 • {19.141.05)'


    OCR Scan     		PDF WJ-EA54-3 50-ohm EA54-3

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586

    Untitled

    Abstract: No abstract text available
    Text: What HEW LETT* mitiM PACKARD Low C ost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount


    OCR Scan     		PDF AT-41586 AT-41586

    Untitled

    Abstract: No abstract text available
    Text: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Wtiol H EW LETT f t X fl PACKARD SOT-143 Plastic Features 0.92 0.036 0.78 (0.031) Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.8 dB typical at 2.0 GHz High Associated Gain: 18.0 dB typical at 1.0 GHz


    OCR Scan     		PDF AT-41411 OT-143