anchor flange
Abstract: 27E121 27E123 27E891 27E122 27E892 20C217 27E007 11 pin relay Socket 27E937
Text: Relay and Socket Usage Chart Relay Socket Terminal Type Hold-Down Spring Notes Socket Page CB 8-pin octal 27E122 27E891 Screw Screw — — 5 109 109 CB (11-pin octal) 27E123 27E892 Screw Screw — — 5 109 109 CD (8-pin octal) 27E122 27E891 Screw Screw
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27E122
27E891
11-pin
27E123
27E892
anchor flange
27E121
27E123
27E891
27E122
27E892
20C217
27E007
11 pin relay Socket
27E937
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RIACON Type 169, RM 3.5mm
Abstract: TMCM-109-57 riacon RIACON Type 169 RM 3.5mm riacon typ 49 riacon* 6 pin male connector NEMA-23 TMC249 TMC428 how to interface microcontroller to optocoupler
Text: PANdrive PD-109-57 57mm / NEMA-23 Stepper Motor Mechatronic Module TMCM-109-57 Electronics Manual Version: 1.11 December 8th, 2008 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com PD-109-57 / TMCM-109-57 Manual V1.11 / December 8th, 2008
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PD-109-57
NEMA-23
TMCM-109-57
PD-109-57
RIACON Type 169, RM 3.5mm
riacon
RIACON Type 169 RM 3.5mm
riacon typ 49
riacon* 6 pin male connector
TMC249
TMC428
how to interface microcontroller to optocoupler
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SMD RESISTOR 100 OHMS
Abstract: 101K capacitor ceramic SMD 1206 RESISTOR 0 OHMS smd schottky diode marking U2 2200 MF CAPACITOR 25v capacitor 2200 uf 25v GRM42-6X7R103M SMD 1206 RESISTOR 100 OHMS resistor smd capacitor 10 uF x 25v
Text: TL5001EVM-108/109/110 Assembly File Effective Date: 04/30/99 Current EVM Rev: B TEXAS INSTRUMENTS TL5001EVM-108/109/110 Assembly File Table of Contents Introduction. 3
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TL5001EVM-108/109/110
TL5001EVM-108/109/110
SMD RESISTOR 100 OHMS
101K capacitor ceramic
SMD 1206 RESISTOR 0 OHMS
smd schottky diode marking U2
2200 MF CAPACITOR 25v
capacitor 2200 uf 25v
GRM42-6X7R103M
SMD 1206 RESISTOR 100 OHMS
resistor smd
capacitor 10 uF x 25v
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RIACON Type 169 RM 3.5mm
Abstract: TMCM-109-57 riacon typ 49 optocoupler 357 riacon 49 NEMA-23 TMC249 TMC428 RIACON Type 169, RM 3.5mm step motor driver 10A
Text: PANDrive PD-109-57 57mm / NEMA-23 Stepper Motor Mechatronic Module TMCM-109-57 Electronics Manual Version: 1.07 July 18th, 2006 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany Phone +49-40-51 48 06 - 0 FAX: +49-40-51 48 06 - 60
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PD-109-57
NEMA-23
TMCM-109-57
PD-109-57
29-Jun-2005
09-Dec-2005
23-Dec-05
30-Mar-2006
18-Jul-06
RIACON Type 169 RM 3.5mm
riacon typ 49
optocoupler 357
riacon 49
TMC249
TMC428
RIACON Type 169, RM 3.5mm
step motor driver 10A
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RIACON Type 169, RM 3.5mm
Abstract: TMCM-109-57 Trinamic PD1-109-57-RS PANdrive riacon typ 49 QSH5718 TMC249 TMC428 PD3-109-57-RS PDx-109-57 PD4-109-57-RS
Text: PDx-109-57 V2 Hardware Manual Version: 1.12 2010-JAN-15 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com PDx-109-57 V2 Hardware Manual V1.12 / 2010-JAN-15 Contents 1 2 3 4 5 6 7 8 9 10 11 Life support policy . 4
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PDx-109-57
2010-JAN-15
2010-JAN-15)
RIACON Type 169, RM 3.5mm
TMCM-109-57
Trinamic PD1-109-57-RS PANdrive
riacon typ 49
QSH5718
TMC249
TMC428
PD3-109-57-RS
PD4-109-57-RS
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FDN8601
Abstract: No abstract text available
Text: FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m: Features General Description Max rDS on = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDN8601
FDN8601
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TMCM-109-57
Abstract: riacon typ 49 QSH5718 TMC249 TMC428 RIACON Type 169, RM 3.5mm how to interface microcontroller with optocoupler
Text: PDx-109-57 V2 Hardware Manual Version: 1.13 2010-SEP-25 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20 357 Hamburg, Germany http://www.trinamic.com PDx-109-57 V2 Hardware Manual V1.13 / 2010-SEP-25 Contents 1 2 3 4 5 6 7 8 9 10 11 Life support policy . 4
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PDx-109-57
2010-SEP-25
2010-SEP-25)
PDx-109]
QSH5718]
QSH5718
TMCM-109-57
riacon typ 49
TMC249
TMC428
RIACON Type 169, RM 3.5mm
how to interface microcontroller with optocoupler
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FDC8601
Abstract: No abstract text available
Text: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description ̈ Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDC8601
FDC8601
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linear optocoupler
Abstract: CP CLARE LOC110 AN-109 Isolation amplifier
Text: APPLICATION NOTE AN-109 Variable-Speed Motor Controller Design Utilizing the LOC110 AN-109 Variable-Speed Motor Controller Design Utilizing the LOC110 The Application Variable speed controllers regulate the speed and/or torque of asynchronous motors. Depending on the application, there are controllers from a few hundred Watts up to several hundred kWatts. These speed controllers
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AN-109
LOC110
LOC110
AN-109-R1
linear optocoupler
CP CLARE
AN-109
Isolation amplifier
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LOC110
Abstract: AN-109 phototransistor with amplifier "Isolation Amplifier"
Text: APPLICATION NOTE AN-109 Variable-Speed Motor Controller Design Utilizing the LOC110 AN-109 Variable-Speed Motor Controller Design Utilizing the LOC110 The Application Variable speed controllers regulate the speed and/or torque of asynchronous motors. Depending on the application, there are controllers from a few hundred Watts up to several hundred kWatts. These speed controllers
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AN-109
LOC110
LOC110
AN-109-R1
AN-109
phototransistor with amplifier
"Isolation Amplifier"
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FDC8601
Abstract: No abstract text available
Text: FDC8601 N-Channel Power Trench MOSFET 100 V, 2.7 A, 109 mΩ Features General Description Max rDS on = 109 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDC8601
FDC8601
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EIA/JESD22-A114-A
Abstract: EIA-625 all ic datasheet in one pdf file electro discharge machining JESD22-A114-A A112 A115-A WAN-109
Text: w WAN-109 ESD Damage in Integrated Circuits: Causes and Prevention Applications Note, November 2001, Rev 1.2 CONTENTS BRIEF SUMMARY . 1 INTRODUCTION . 2
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WAN-109
WAN-107
EIA-625
EIA/JESD22-A114-A
EIA/JESD22-A115-A
WAN-109
EIA/JESD22-A114-A
EIA-625
all ic datasheet in one pdf file
electro discharge machining
JESD22-A114-A
A112
A115-A
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1n4148 die chip
Abstract: 1N4150 DIE 1N4148 chip 1n4148 die WN diode CPD41-1N4150-CT DIE CHIP 51 BAS56 CPD41 CPD93V
Text: PCN # 109 Notification Date: 21 April 2009 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip process CPD41, High Current Switching Diode discrete semiconductors, wafers, and die in chip
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CPD41,
CPD41
CPD93V
CPD41-BAS56-WN
CPD41-CEN923-CT
CPD41-CMPD4150-WR
CPD41-CMPD4150-WS
CPD41-CMPD914-WN
CPD41-1N3600-WN
1n4148 die chip
1N4150 DIE
1N4148 chip
1n4148 die
WN diode
CPD41-1N4150-CT
DIE CHIP 51
BAS56
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSA56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPSA56-109
56INCH
800PCS/
other05
KPSA56-109
DSAA9128
MAR/25/2005
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|
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSA04-109 BLUE Description 0.4INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPSA04-109
800PCS/
DSAA9094
MAR/25/2005
KPSA04-109
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPDC56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPDC56-109
56INCH
400PCS/
other05
KPDC56-109
DSAA9191
MAR/25/2005
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES KPSA02-109 BLUE Description Features 0.2INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPSA02-109
1300PCS
other05
KPSA02-109
DSAA9966
MAR/24/2005
|
Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSC56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPSC56-109
56INCH
800PCS/
other05
KPSC56-109
DSAA9139
MAR/25/2005
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPSC04-109 BLUE Description 0.4INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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Original
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KPSC04-109
800PCS/REEL.
DSAA9098
MAR/25/2005
KPSC04-109
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features KPDA56-109 BLUE Description 0.56INCH DIGIT HEIGHT. The Blue source color devices are made with GaN on SiC LOW CURRENT OPERATION. Light Emitting Diode.
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KPDA56-109
56INCH
400PCS/
other05
KPDA56-109
DSAA9180
MAR/25/2005
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSE1120 lFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 A = Anode, C = Cathode Symbol Tc = 60°C; rectangular, d = 0.5 Tc = 95°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM 109 75 tbd A A
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DSE1120
O-247
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MTZJ SERIES ZENER DIODES
Abstract: Schottky Barrier Diodes
Text: Diodes Diodes [Surface Mounting Type Diodes CLeaded Type) Quick Reference- 108 Quick Reference- 119 Cha racter
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tions---------------------------------122
5200B
MTZJ SERIES ZENER DIODES
Schottky Barrier Diodes
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M109
Abstract: No abstract text available
Text: ¡gHg illlil • I M-109 & M-122 t t e lM M H z i +7 dBm/Higit P M fsnlftion/OPL Vmhm/TS-5 PRINCIPAL SPECIFICATIONS RF/LO Frequency, MHz IF Frequency, MHz M-109 1 -500 DC - 500 7.0 8.5 5 -2 0 0 1 -500 40 25 1 -50 50 - 500 30 18 1 -50 50 - 500 M-122 5 -1 00 0
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M-109
M-122
M-109
M-122
MIL-M-28837
23Feb96
M109
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M74HC109
Abstract: No abstract text available
Text: ! r = 7 S G S -T H O M S O N A 7 # M 5 4 H C 109 M 7 4 H C 109 DUAL J-K FLIP FLOP WITH PRESET AND CLEAR • HIGH SPEED fMAX = 60 MHz TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 /¿A (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V N |H = V n il = 28% VCc (MIN.)
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54/74LS109
M54HC109
M74HC100
M54/74HC109
M74HC109
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