AN-1084
Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5
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AN-1084
AN-1084
Power MOSFET Basics
HEXFET Power MOSFET designer manual
HEXFET Power MOSFET Designers Manual
BJT with i-v characteristics
MOSFET designer manual
N-Channel jfet 100V depletion
N-Channel jfet 500V depletion
n channel depletion MOSFET
AN10841
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ac 1084
Abstract: sunplus 1002 sound generator using IC 555
Text: SPL02D 19.5KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION The SPL02D is a CMOS 8-bit single chip microprocessor. By using advanced technology and mechanism, it contains RAM, ROM, I/Os, one interrupt controller, two tone generators, one noise generator, and one automatic
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SPL02D
SPL02D
SPL02D,
192-byte
ac 1084
sunplus 1002
sound generator using IC 555
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sunplus 1002
Abstract: ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB
Text: SPL02D 1 9.5KB LCD Controller/Driver 19 AUG. 09, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPL02D
sunplus 1002
ac 1084
sound generator using IC 555
sunplus 1500
00FF
SEG22
SEG40
SPL02D
IC 555 as temperature controller
195KB
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A008 amplifier TRANSISTOR
Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf
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5091-8350E
5966-0935E
AT-41511
5964-3853E
AT-32063
5966-0781E
A008 amplifier TRANSISTOR
FET transistors with s-parameters
high power FET transistor s-parameters
transistor A006
Hewlett-Packard transistor microwave
1084 transistor
RF Transistor s-parameter
hewlettpackard rf transistor
A004R
RF transistors with s-parameters
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abb r1561
Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
Text: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .
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D0201
D-69006
abb r1561
ghv 111 0001 r2
ABB STOTZ-KONTAKT S 212
r1561
R1561 RELAY
r 2501 kk 106
R8207
sigma reed relay
R1142
GHR 166 0004 R 0002
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EE - CH4
Abstract: EE CH4
Text: Panasonic Operational Amplifiers AN 1084, AN1084S Quadruple J-FET Input Operational Amplifiers • Overview A N 1084 The AN 1084 and the AN1084S are quadruple opera tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high
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AN1084S
AN1084S
1012fJ
b132fl52
001237b
EE - CH4
EE CH4
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Untitled
Abstract: No abstract text available
Text: AN 1084, AN1084S OPERATIONAL AMPLIFIERS A N I0 8 4 , AN1084S Quadruple J-FET Input Operational Amplifiers • Outline AN 1084 T h e A N 1084 and the AN1084S a re q uadruple o p eratio n al 1 <E am plifiers w ith input sta g e s consisting of P ch J-F E T adopting
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AN1084S
AN1084S
AN1084,
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ld 1086 18
Abstract: No abstract text available
Text: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544
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2SK2736
ADE-208-544
-220C
2SK2684
ld 1086 18
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2SK1084
Abstract: Z5C10
Text: 2S K 1084 S IP M 0 S r' Ä ± / * r7—MOS-FET M OS-FET F-III N C H AN N EL SILICON PO W ER MOS-FET SERIES M ftlk • Features • H ig h c u rre n t • L o w o n re sista n ce • 23CP*t*<rf £ i . % N o s e c o n d a ry b re a k d o w n • • Low driving power
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2SK1084
SC-47
A2-157
2SK1084
Z5C10
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AN1084
Abstract: 25A 1084 AN1084S
Text: Panasonic Operational Amplifiers AN 1 0 8 4 , A N 1084S Quadruple J-FET Input Operational Amplifiers • Overview The AN1084 and the AN1084S are quadruple opera tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high
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AN1084S
AN1084S
1012fJ
106dB
Q012375
32flSE
DD1237b
AN1084
25A 1084
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2SK766
Abstract: No abstract text available
Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage
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2SK766
0170fll
99Z5ISZ
2SK766
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TL 1084
Abstract: 2SK766 1084 fet
Text: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage
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2SK766
O-220
TL 1084
2SK766
1084 fet
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ld 1086 18
Abstract: No abstract text available
Text: 3SK194 Silicon N-Channel Dual Gate MOS FET HITACHI Application VHF/UHF TV tuner RF amplifier Outline M PA K -4 1. Source 2. G a te l 3. G ate2 4. Drain 1080 3SK194 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vos 15
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3SK194
ld 1086 18
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IT500-IT505
Abstract: IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8
Text: IT 5 0 0 - IT 5 0 5 G E SOLID STATE 01 D E | 3 f i ? S D Ö l GDllD3fc. b | IT 5 0 0 - IT 5 0 5 Monolithic Dual Cascoded N-Channel JFE T General Purpose Amplifier GENERAL DESCRIPTION FEATURES A low noise, low leakage FET that employs a cascode structure to accomplish very low Iq at high voltage levels,
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0011D3L,
IT500-IT505
120dB
50Vdg
Vos--14V
VOS-20V
IT500-IT505
IT500
IT501
IT502
IT503
IT504
IT505
SDI-MU
25h8
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ne71084
Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package
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S3200
NE87300
NE76000
NE24283B
ne71084
GaAs MESFET
NE25139
NE4200
NE32684A
NE71000
71083
ne72089
NE72000
MESFET Application
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AN1081S
Abstract: No abstract text available
Text: General Purpose Linear ICs • Operational Amplifier Series V c c = 1 5 V , V ee = — 15V (continued) Category Functions Type No. Operating Power Input Power Consump Offset tion Supply Voltage Voltage max. max. Range (mW) (mV) Package No. Single High input
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AN6583
AN1081
AN1081S
AN6581
AN1082
AN1082S
AN1084S
AN6593
SIP007-P-0000
DIP008-P-0300B
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high power FET transistor s-parameters
Abstract: transistor 9455 PRIMER transistor A006
Text: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:
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A004E
5964-3431E
AT-32063
5091-8824E
5966-0781E
5091-8819E
high power FET transistor s-parameters
transistor 9455
PRIMER
transistor A006
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Untitled
Abstract: No abstract text available
Text: S ELECTRONICS M F - 3 G dill Sam sung M icrowave Sem iconductor 1 4 200 O p t ÌV T lÌZ G C l G aA s FET 2-14 GHz Description Features The SMF-03140-200 is a packaged version of the SMF03100-200. The chip is a 300 urn n-channel MESFET with 0.5 ¿m gate length, utilizing Samsung Microwave’s gain
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SMF-03140-200
SMF03100-200.
SMF-03100-200
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NE32484C-T1
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •
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NE32584C
S12S21|
NE32584C
E32484C
NE32484C-T1
E32584C
84C-SL
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LM 4741
Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
Text: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D
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AN6561
AN1358
AN6562)
AN1358S
2904S
75358S
6223L
10368N
I0358
BA728
LM 4741
TL0820P
75902P
6458D
75458P
4558s
2902N
2904D
75902f
2058d
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Untitled
Abstract: No abstract text available
Text: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B
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JS9P09-AS
At203
254mm
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ua776
Abstract: UA776CH
Text: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE
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UA776
QD23bMD
GQ23b41
UA776
UA776CH
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MC-424000A8FA-60
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the
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MC-424000A8
uPD424100
MC-424QQQA8-60
MC-424000A8-70
MC-424000A8-80
MC-424000A8-10
MC-424000A8BA,
424000A8FA
MC-424000A8FA-60
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N M Q M i H H O T * S U A 7 7 6 PROGRAMMABLE SINGLE OP-AMPs • MICROPOW ER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ W IDE PROGRAMMING RANGE ■ HIGH SLEW RATE . SHORT-CIRCUIT PROTECTION ■ PROGRAMMABLE SINGLE OP-AMPs D E S C R IP T IO N
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UA776
UA776
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