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    1084 FET Search Results

    1084 FET Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJF0411JPD-00#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0411JPD-01#J3 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    RJF0605JPV-00#Q7 Renesas Electronics Corporation Thermal FETs Visit Renesas Electronics Corporation
    ISL95901IRZ-T Renesas Electronics Corporation Integrated FET Regulators Visit Renesas Electronics Corporation

    1084 FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


    Original     		PDF AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841

    ac 1084

    Abstract: sunplus 1002 sound generator using IC 555
    Text: SPL02D 19.5KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION The SPL02D is a CMOS 8-bit single chip microprocessor. By using advanced technology and mechanism, it contains RAM, ROM, I/Os, one interrupt controller, two tone generators, one noise generator, and one automatic


    Original     		PDF SPL02D SPL02D SPL02D, 192-byte ac 1084 sunplus 1002 sound generator using IC 555

    sunplus 1002

    Abstract: ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB
    Text: SPL02D 1 9.5KB LCD Controller/Driver 19 AUG. 09, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.


    Original     		PDF SPL02D sunplus 1002 ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB

    A008 amplifier TRANSISTOR

    Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF 5091-8350E 5966-0935E AT-41511 5964-3853E AT-32063 5966-0781E A008 amplifier TRANSISTOR FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters

    abb r1561

    Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
    Text: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .


    Original     		PDF D0201 D-69006 abb r1561 ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002

    EE - CH4

    Abstract: EE CH4
    Text: Panasonic Operational Amplifiers AN 1084, AN1084S Quadruple J-FET Input Operational Amplifiers • Overview A N 1084 The AN 1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high


    OCR Scan     		PDF AN1084S AN1084S 1012fJ b132fl52 001237b EE - CH4 EE CH4

    Untitled

    Abstract: No abstract text available
    Text: AN 1084, AN1084S OPERATIONAL AMPLIFIERS A N I0 8 4 , AN1084S Quadruple J-FET Input Operational Amplifiers • Outline AN 1084 T h e A N 1084 and the AN1084S a re q uadruple o p eratio n al 1 <E am plifiers w ith input sta g e s consisting of P ch J-F E T adopting


    OCR Scan     		PDF AN1084S AN1084S AN1084,

    ld 1086 18

    Abstract: No abstract text available
    Text: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544


    OCR Scan     		PDF 2SK2736 ADE-208-544 -220C 2SK2684 ld 1086 18

    2SK1084

    Abstract: Z5C10
    Text: 2S K 1084 S IP M 0 S r' Ä ± / * r7—MOS-FET M OS-FET F-III N C H AN N EL SILICON PO W ER MOS-FET SERIES M ftlk • Features • H ig h c u rre n t • L o w o n re sista n ce • 23CP*t*<rf £ i . % N o s e c o n d a ry b re a k d o w n • • Low driving power


    OCR Scan     		PDF 2SK1084 SC-47 A2-157 2SK1084 Z5C10

    AN1084

    Abstract: 25A 1084 AN1084S
    Text: Panasonic Operational Amplifiers AN 1 0 8 4 , A N 1084S Quadruple J-FET Input Operational Amplifiers • Overview The AN1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high


    OCR Scan     		PDF AN1084S AN1084S 1012fJ 106dB Q012375 32flSE DD1237b AN1084 25A 1084

    2SK766

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 0170fll 99Z5ISZ 2SK766

    TL 1084

    Abstract: 2SK766 1084 fet
    Text: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK766 O-220 TL 1084 2SK766 1084 fet

    ld 1086 18

    Abstract: No abstract text available
    Text: 3SK194 Silicon N-Channel Dual Gate MOS FET HITACHI Application VHF/UHF TV tuner RF amplifier Outline M PA K -4 1. Source 2. G a te l 3. G ate2 4. Drain 1080 3SK194 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vos 15


    OCR Scan     		PDF 3SK194 ld 1086 18

    IT500-IT505

    Abstract: IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8
    Text: IT 5 0 0 - IT 5 0 5 G E SOLID STATE 01 D E | 3 f i ? S D Ö l GDllD3fc. b | IT 5 0 0 - IT 5 0 5 Monolithic Dual Cascoded N-Channel JFE T General Purpose Amplifier GENERAL DESCRIPTION FEATURES A low noise, low leakage FET that employs a cascode structure to accomplish very low Iq at high voltage levels,


    OCR Scan     		PDF 0011D3L, IT500-IT505 120dB 50Vdg Vos--14V VOS-20V IT500-IT505 IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    AN1081S

    Abstract: No abstract text available
    Text: General Purpose Linear ICs • Operational Amplifier Series V c c = 1 5 V , V ee = — 15V (continued) Category Functions Type No. Operating Power Input Power Consump­ Offset tion Supply Voltage Voltage max. max. Range (mW) (mV) Package No. Single High input


    OCR Scan     		PDF AN6583 AN1081 AN1081S AN6581 AN1082 AN1082S AN1084S AN6593 SIP007-P-0000 DIP008-P-0300B

    high power FET transistor s-parameters

    Abstract: transistor 9455 PRIMER transistor A006
    Text: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:


    OCR Scan     		PDF A004E 5964-3431E AT-32063 5091-8824E 5966-0781E 5091-8819E high power FET transistor s-parameters transistor 9455 PRIMER transistor A006

    Untitled

    Abstract: No abstract text available
    Text: S ELECTRONICS M F - 3 G dill Sam sung M icrowave Sem iconductor 1 4 200 O p t ÌV T lÌZ G C l G aA s FET 2-14 GHz Description Features The SMF-03140-200 is a packaged version of the SMF03100-200. The chip is a 300 urn n-channel MESFET with 0.5 ¿m gate length, utilizing Samsung Microwave’s gain


    OCR Scan     		PDF SMF-03140-200 SMF03100-200. SMF-03100-200

    NE32484C-T1

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •


    OCR Scan     		PDF NE32584C S12S21| NE32584C E32484C NE32484C-T1 E32584C 84C-SL

    LM 4741

    Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
    Text: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D


    OCR Scan     		PDF AN6561 AN1358 AN6562) AN1358S 2904S 75358S 6223L 10368N I0358 BA728 LM 4741 TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d

    Untitled

    Abstract: No abstract text available
    Text: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B


    OCR Scan     		PDF JS9P09-AS At203 254mm

    ua776

    Abstract: UA776CH
    Text: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE


    OCR Scan     		PDF UA776 QD23bMD GQ23b41 UA776 UA776CH

    MC-424000A8FA-60

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the


    OCR Scan     		PDF MC-424000A8 uPD424100 MC-424QQQA8-60 MC-424000A8-70 MC-424000A8-80 MC-424000A8-10 MC-424000A8BA, 424000A8FA MC-424000A8FA-60

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N M Q M i H H O T * S U A 7 7 6 PROGRAMMABLE SINGLE OP-AMPs • MICROPOW ER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ W IDE PROGRAMMING RANGE ■ HIGH SLEW RATE . SHORT-CIRCUIT PROTECTION ■ PROGRAMMABLE SINGLE OP-AMPs D E S C R IP T IO N


    OCR Scan     		PDF UA776 UA776