EE - CH4

Abstract: EE CH4
Contextual Info: Panasonic Operational Amplifiers AN 1084, AN1084S Quadruple J-FET Input Operational Amplifiers • Overview A N 1084 The AN 1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high

Contextual Info: AN 1084, AN1084S OPERATIONAL AMPLIFIERS A N I0 8 4 , AN1084S Quadruple J-FET Input Operational Amplifiers • Outline AN 1084 T h e A N 1084 and the AN1084S a re q uadruple o p eratio n al 1 <E am plifiers w ith input sta g e s consisting of P ch J-F E T adopting

AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Contextual Info: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5

ld 1086 18

Contextual Info: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544

2SK1084

Abstract: Z5C10
Contextual Info: 2S K 1084 S IP M 0 S r' Ä ± / * r7—MOS-FET M OS-FET F-III N C H AN N EL SILICON PO W ER MOS-FET SERIES M ftlk • Features • H ig h c u rre n t • L o w o n re sista n ce • 23CP*t*<rf £ i . % N o s e c o n d a ry b re a k d o w n • • Low driving power

AN1084

Abstract: 25A 1084 AN1084S
Contextual Info: Panasonic Operational Amplifiers AN 1 0 8 4 , A N 1084S Quadruple J-FET Input Operational Amplifiers • Overview The AN1084 and the AN1084S are quadruple opera­ tional amplifiers with input stages consisting of P-ch JFET adopting the ion implantation process, realizing high

ac 1084

Abstract: sunplus 1002 sound generator using IC 555
Contextual Info: SPL02D 19.5KB LCD CONTROLLER/DRIVER GENERAL DESCRIPTION The SPL02D is a CMOS 8-bit single chip microprocessor. By using advanced technology and mechanism, it contains RAM, ROM, I/Os, one interrupt controller, two tone generators, one noise generator, and one automatic

sunplus 1002

Abstract: ac 1084 sound generator using IC 555 sunplus 1500 00FF SEG22 SEG40 SPL02D IC 555 as temperature controller 195KB
Contextual Info: SPL02D 1 9.5KB LCD Controller/Driver 19 AUG. 09, 2001 Version 1.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

2SK766

Contextual Info: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage

TL 1084

Abstract: 2SK766 1084 fet
Contextual Info: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage

ld 1086 18

Contextual Info: 3SK194 Silicon N-Channel Dual Gate MOS FET HITACHI Application VHF/UHF TV tuner RF amplifier Outline M PA K -4 1. Source 2. G a te l 3. G ate2 4. Drain 1080 3SK194 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Drain to source voltage Vos 15

IT500-IT505

Abstract: IT500 IT501 IT502 IT503 IT504 IT505 SDI-MU 25h8
Contextual Info: IT 5 0 0 - IT 5 0 5 G E SOLID STATE 01 D E | 3 f i ? S D Ö l GDllD3fc. b | IT 5 0 0 - IT 5 0 5 Monolithic Dual Cascoded N-Channel JFE T General Purpose Amplifier GENERAL DESCRIPTION FEATURES A low noise, low leakage FET that employs a cascode structure to accomplish very low Iq at high voltage levels,

BUK950

Contextual Info: Philips Semiconductors Product specification T renehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench' technology. The device features very low on-state resistance and has

ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package

A008 amplifier TRANSISTOR

Abstract: FET transistors with s-parameters high power FET transistor s-parameters transistor A006 Hewlett-Packard transistor microwave 1084 transistor RF Transistor s-parameter hewlettpackard rf transistor A004R RF transistors with s-parameters
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

high power FET transistor s-parameters

Abstract: transistor 9455 PRIMER transistor A006
Contextual Info: | 2 3 | HEW LETT 1"HA P A C K A R D Applications The applicatim i notes represented by these abstracts are available fro m y o u r local Hewlett-Packard sales office or nearest Hewlett-Packard authorized d istrib u to r or representative. Techn ical inform ation is aiso available on the WWW at:

Contextual Info: S ELECTRONICS M F - 3 G dill Sam sung M icrowave Sem iconductor 1 4 200 O p t ÌV T lÌZ G C l G aA s FET 2-14 GHz Description Features The SMF-03140-200 is a packaged version of the SMF03100-200. The chip is a 300 urn n-channel MESFET with 0.5 ¿m gate length, utilizing Samsung Microwave’s gain

NE32484C-T1

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •

LM 4741

Abstract: TL0820P 75902P 6458D 75458P 4558s 2902N 2904D 75902f 2058d
Contextual Info: General Purpose Linear ICs • Comparison Table of Op Amps. M aker Panasonic NEC C ategory Single power supply 11St' Quad AN1358 //P C 3 5 8 C AN6562 /¿PC 1251C AN1358S /¿PC358C. (AN6562S) f j } \ 125KÍ AN 1324 (AN 6564) Dual Audio //P C 3 2 4 C N IJM 324D

Contextual Info: Revised Mar. 1998 JS9P09-AS 1. R F PERFO R M A N CE SP E C IF IC A T IO N S CHARACTERISTICS SYM BOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm 7.0 9.5 — dB IDS1 - 0.18 0.3 A T|add - 28 — % Output Power at ld B Compression Point PldB Power Gain at ld B

ua776

Abstract: UA776CH
Contextual Info: • r z T Ä 7=15=1237 0023^=1 S ■ " P ^ - O 0 !_ S G S -T H O M S O N 7 # M ^ o m i(O T (ô M S U A 7 7 6 S G S-THOMSON 3GE D PROGRAMMABLE SINGLE OP-AMPs ■ M ICRO PO W ER OPERATION ■ NO FREQ UENC Y COM PENSATION REQUIRED ■ W IDE PROGRAMMING RANGE

abb r1561

Abstract: ghv 111 0001 r2 ABB STOTZ-KONTAKT S 212 r1561 R1561 RELAY r 2501 kk 106 R8207 sigma reed relay R1142 GHR 166 0004 R 0002
Contextual Info: Technical Catalogue Solid State Relays Interface Relays Solid-state relays Terminal modules Contents ABB STOTZ-KONTAKT GmbH Solid-state relays SIGMASWITCH .

MC-424000A8FA-60

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-424000A8 SERIES 4M-WORD BY 8-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A8 is a 4 194 304 w ords by 8 bits dynamic RAM m odule on which 8 pieces o f 4M DRAM </iPD424100 are assembled. This m odule provides high density and large quantities o f m em ory in a small space w ith o u t utilizing the

Contextual Info: S G S -T H O M S O N M Q M i H H O T * S U A 7 7 6 PROGRAMMABLE SINGLE OP-AMPs • MICROPOW ER OPERATION ■ NO FREQUENCY COMPENSATION REQUIRED ■ W IDE PROGRAMMING RANGE ■ HIGH SLEW RATE . SHORT-CIRCUIT PROTECTION ■ PROGRAMMABLE SINGLE OP-AMPs D E S C R IP T IO N