Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    107 10V Search Results

    107 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    107 10V Price and Stock

    Same Sky TBLH10V-381-07BK

    Fixed Terminal Blocks Screwless, High Temperature,Vertical, 3.81 mm pitch, Black with Gray Button
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TBLH10V-381-07BK 956
    • 1 $3.25
    • 10 $2.48
    • 100 $2.02
    • 1000 $1.49
    • 10000 $1.4
    Buy Now

    Vishay Intertechnologies 150D107X9010R2B

    Tantalum Capacitors - Solid Leaded 100uF 10volts 10% R case Axial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 150D107X9010R2B 34
    • 1 $8.1
    • 10 $6.23
    • 100 $5.29
    • 1000 $4.59
    • 10000 $4.59
    Buy Now

    Vishay Intertechnologies 199D107X9010E6V1

    Tantalum Capacitors - Solid Leaded 100uF 10volts 10% E case .20 LS Radial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 199D107X9010E6V1 1
    • 1 $4.03
    • 10 $3.5
    • 100 $2.89
    • 1000 $2.32
    • 10000 $2.28
    Buy Now

    ITT Interconnect Solutions MDSM-30PE-Z10-VR22

    D-Sub MIL Spec Connectors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MDSM-30PE-Z10-VR22
    • 1 $93.37
    • 10 $91.03
    • 100 $79.66
    • 1000 $79.66
    • 10000 $79.66
    Get Quote

    Diodes Incorporated D10V0S1US2LP1610-7

    ESD Protection Diodes / TVS Diodes Surge Protection PP U-DFN1610-2 T&R 10K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics D10V0S1US2LP1610-7
    • 1 $0.47
    • 10 $0.33
    • 100 $0.167
    • 1000 $0.101
    • 10000 $0.07
    Get Quote

    107 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP105

    Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
    Text: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.


    Original
    PDF TIP105/106/107 TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A

    design of 4-20mA transmitter for bridge type transducer using op-amp

    Abstract: "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op
    Text: APPLICATION NOTE AN-107 Linear Optocouplers AN-107 Introduction This application note describes isolation amplifier design principles for the LOC Series linear optocoupler devices. It describes the circuit operation in photoconductive and photovoltaic modes and provides some


    Original
    PDF AN-107 AN-107-R2 design of 4-20mA transmitter for bridge type transducer using op-amp "Current to Voltage Converter" 4-20ma using LM358 0-10v to 4-20ma LM341A eeg amplifier examples LOC111 4-20mA transmitter for a bridge type transducer using op-amp lm358 4-20mA bridge transducer 4-20mA transmitter using op-amp circuit diagram bridge transducer 4-20ma using op

    SG-107

    Abstract: SG107
    Text: Photointerrupters Reflective KODENSHI SG-107 DIMENSIONS (Unit : mm) The SG-107 reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini package, reducing installation space. FEATURES •Compact •High performance •High-speed response


    Original
    PDF SG-107 SG-107 SG107

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original
    PDF TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4v, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original
    PDF TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107

    Untitled

    Abstract: No abstract text available
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original
    PDF TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107

    22 J1J

    Abstract: No abstract text available
    Text: Product Description SSW-107 Stanford Microdevices’ SSW-107 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable miniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    Original
    PDF SSW-107 SSW-107 500MHz 22 J1J

    TIP105

    Abstract: TIP106 TIP107
    Text: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use


    Original
    PDF TIP105/106/107 TIP100/101/102 O-220 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107

    Untitled

    Abstract: No abstract text available
    Text: OPA2107 OPA 2 OPA 2 107 107 SBOS161A – JANUARY 1989 – REVISED JULY 2003 Precision Dual Difet Operational Amplifier FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● Very Low Noise: 8nV/√Hz at 10kHz Low VOS: 1mV max Low Drift: 10µV/°C max


    Original
    PDF OPA2107 SBOS161A 10kHz OPA2107

    SG-107

    Abstract: No abstract text available
    Text: SG-107 フォトインタラプタ PHOTOINTERRUPTERS SG-107は赤外発光ダイオードと高感度フォトトランジスタを超小型樹脂にモールドした反射型フォトセンサで取 付けスペースの削減が出来ます。 The SG-107 reflective sensor combines a GaAs IRED wiht a high-sensitivity phototransistor in a super-mini


    Original
    PDF SG-107 SG-107

    Untitled

    Abstract: No abstract text available
    Text: SG-107 nm tr tf 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. SG-107 / PD/光a IF/VF I L/IF mA mA mW V CE =2V 光a =25


    Original
    PDF SG-107

    Untitled

    Abstract: No abstract text available
    Text: STL110N10F7 N-channel 100 V, 0.005 Ω typ., 107 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS STL110N10F7 100 V RDS on max ID PTOT 0.006 Ω 107 A 136 W (VGS= 10 V) • Ultra low on-resistance


    Original
    PDF STL110N10F7 DocID024004

    220V Automatic Voltage Regulator

    Abstract: PORTABLE SOLAR MOBILE CHARGER 220V 5A Automatic Voltage Regulator 6 pin TRANSISTOR SMD CODE XI 8550 NPN Transistor 220V Automatic Voltage Regulator circuit 220v to 24v switching regulator circuits 110v ac mobile charger SOLAR MOBILE CHARGER 220v ac to 3.7v dc converter
    Text: @ Your Convenience! Visit our web site www.sii-ic.com Contents POWER SUPPLY ICs . 8 MEMORY ICs . 96 SENSORS . 107 MINI ANALOG ICs . 115


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Tantalum Product – TAJ Series A Kyocera Group Company PRODUCT SPECIFICATIONS : Nominal Capacitance @ 120Hz 107µF Capacitance Tolerance * K = ± 10%, M = ± 20% Rated Voltage DC (VR) < 85oC Category Voltage DC (VC) < 125oC 10V Surge Voltage (VS) < 85oC 20V


    Original
    PDF 120Hz 100kHz 125oC -55oC

    TIP105

    Abstract: TIP106 TIP107
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS


    Original
    PDF TIP105/106/107 O-220C TIP100/101/102 TIP105 TIP106 TIP107 TIP105 TIP106 TIP107

    TIP102

    Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS


    Original
    PDF TIP100/101/102 O-220C TIP105/106/107 TIP100 TIP101 TIP102 TIP102 TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn

    CL32A107MPVNNNE

    Abstract: No abstract text available
    Text: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL32A107MPVNNNE  Product : Multi-layer Ceramic Capacitor Description : CAP, 100㎌, ±20%, 10V, X5R, 1210 A. Samsung Part Number ① Series CL 32 A 107 M P V N N N E ① ②


    Original
    PDF CL32A107MPVNNNE 12/-0hrs 48/-0hrs 10sec.

    equivalent schematic of LM107

    Abstract: LM307N LM307J LM307N equivalent lm 307 operational amplifier LM101 LM101A LM107 LM107F LM107H
    Text: LM107, LM307 Operational Amplifiers DWÜ^DL FEATURES • • • • • Offset voltage 3 mV m axim um over tem perature 107 Input current 100 nA m axim um over tem perature (107) Offset current 20 nA m axim um over tem perature (107) Guaranteed drift characteristics


    OCR Scan
    PDF LM107, LM307 LM101, LM101A equivalent schematic of LM107 LM307N LM307J LM307N equivalent lm 307 operational amplifier LM101 LM107 LM107F LM107H

    15VPH

    Abstract: I-10K
    Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,


    OCR Scan
    PDF FX-107, FX-207 FX-307 FX-207, FX-307, C-073 15VPH I-10K

    3528 IR

    Abstract: yd 7343
    Text: Panasonic Solid Tantalum Capacitors Surface Mount Type TEH Series Surface Mount Type • « ua « JH FEATURES LfS3 □ US ijB ■ Basic Specifications : IECQ-QC300800, IECQQC300801/US0001 1 T V ■ Moisture Resistance : 1 000 h at 90-95%RH, + 60°C 107 107


    OCR Scan
    PDF IECQ-QC300800, IECQQC300801/US0001 120Hz, QC300801 US0001 120Hz) 100kHz, ECSH1VY473R ECSH1VY683R 3528 IR yd 7343

    Untitled

    Abstract: No abstract text available
    Text: SSW-107 Product Description Stanford M icrodevices’ SSW -107 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable m iniature small outline plastic package. DC-4 GHz High Isolation GaAs MMIC SPDT Switch


    OCR Scan
    PDF SSW-107

    transistor BS 107

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor vDS ^ D S o n BS 107 = 200 V = 0.13 A = 26 Q • N channel • Enhancement mode • Package: T O -9 2 ') Type Ordering code for version on tape Ordering code for version in bulk BS 107 Q67000-S078 Q67000-S060 Maximum Ratings


    OCR Scan
    PDF Q67000-S078 Q67000-S060 transistor BS 107

    BC109

    Abstract: bc107 BC 107 BC108 bc 230 BC178 BC179 bc 750 BC-1096 bc audio transistors
    Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOV/ NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 107, BC 108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circu its of television receivers.


    OCR Scan
    PDF BC109 BC178 BC179. 100mA Jun108 bc107 BC 107 BC108 bc 230 BC179 bc 750 BC-1096 bc audio transistors

    A709 transistor

    Abstract: OP 741 mini dip ic na741 LM207H NATIONAL LM107 pin diagram LM107 fairchild 709 lm 307 operational amplifier 19666D LM307H
    Text: Fairchild Sem iconductors LM 107, 207, 307 O perational A m plifiers Sem iconductors Linear I. C . 's - Operational Amplifiers C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 107 s e rie s of G e n e ra l P u r p o s e O p eration al


    OCR Scan
    PDF nA709 jA709, nA741. LM207 LM307 LM107 LM207 LM307 A709 transistor OP 741 mini dip ic na741 LM207H NATIONAL LM107 pin diagram LM107 fairchild 709 lm 307 operational amplifier 19666D LM307H