1064 nm
Abstract: RLTCO-1064-50W
Text: RLTCO-1064-50W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 50 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-50W
1064 nm
RLTCO-1064-50W
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1064 nm
Abstract: RLTCO-1064-100W
Text: RLTCO-1064-100W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 100 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-100W
1064 nm
RLTCO-1064-100W
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1064 nm
Abstract: RLTCO-1064-200W
Text: RLTCO-1064-200W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 200 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-200W
1064 nm
RLTCO-1064-200W
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LiNbO3 phase modulator
Abstract: No abstract text available
Text: NIR-LN series LiNb03 intensity and phase modulators for 1064 nm and near infrared NIR-LN series LiNb03 intensity and phase modulators for 1064 nm and near infrared Product family 1550 nm & 1300 nm windows 1550 nm & 1300 nm windows NIR window description data rates
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LiNb03
LiNbO3 phase modulator
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1064 nm
Abstract: RLTCO-1064-75W
Text: RLTCO-1064-75W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 75 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-75W
1064 nm
RLTCO-1064-75W
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QD100-4X
Abstract: No abstract text available
Text: Silicon Photodetector Series 4X HIGH SPEED 1064 NM PULSE SENSING The 4X series of photodetectors are designed specifically for sensing high speed 1064 nm Nd YAG laser pulses. The detector structure is designed to be fully depleted at 150 volts reverse bias and offers high
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200mA
QD320-4X*
QD100-4X
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M9-A64-0200-S5P
Abstract: No abstract text available
Text: Product Specifications Features 1064 nm Single-Mode Laser Diodes • Up to 350 mW CW output power. Description: • High Quality, Reliability, and Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 1064 nm single mode
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1064nm
ss-a60-pppp-s50
M9-A64-0200-S5P
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RLCO-1064-2000-TO3
Abstract: No abstract text available
Text: RLCO-1064-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1064 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration
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RLCO-1064-2000-TO3
RLCO-1064-2000-TO3
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1064 nm
Abstract: RLTCO-1064-400W
Text: RLTCO-1064-400W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 400 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-400W
1064 nm
RLTCO-1064-400W
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1064 nm
Abstract: RLTCO-1064-500W
Text: RLTCO-1064-500W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 500 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-500W
1064 nm
RLTCO-1064-500W
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TEM00
Abstract: No abstract text available
Text: DATA SHEET EYP-DFB-1064-00080-1500-TOC03-000x Version 0.90 2009-05-20 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1064 nm DFB Laser with hermetic TO Housing
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EYP-DFB-1064-00080-1500-TOC03-000x
TEM00
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Untitled
Abstract: No abstract text available
Text: Product Specifications Features 1064 nm Single-Mode Laser Diodes • Up to 350 mW CW output power Description: • High Quality, Reliability, and Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 1064 nm single
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1064nm
HW/axcel/sm/1064nm-sm-laser-diode
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1064 nm
Abstract: RLTCO-1064-300W
Text: RLTCO-1064-300W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 300 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability
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RLTCO-1064-300W
1064 nm
RLTCO-1064-300W
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TEM00
Abstract: EYP-DFB-1064-00040-1500-BFY02-0000 1064 nm laser diode
Text: DATA SHEET EYP-DFB-1064-00040-1500-BFY02-0000 Version 0.90 2009-03-10 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1064 nm DFB Laser with hermetic Butterfly Housing
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EYP-DFB-1064-00040-1500-BFY02-0000
TEM00
EYP-DFB-1064-00040-1500-BFY02-0000
1064 nm laser diode
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Untitled
Abstract: No abstract text available
Text: Isolator 1064 nm Polarization Insensitive Isolator Single Stage Parameter Dual Stage Center Wavelength λc 1064 nm Bandwidth ± 10nm Peak Isolation (typical) ≥ 38 dB ≥ 55 dB Isolation in Band (at 23° C) ≥ 30 dB ≥ 45 dB Insertion Loss (typical, (λc ,23° C)
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FS-PM-5121
Abstract: single mode fiber 3M FS-PM-5121 96216 5121 M TEM00 SM13-P-7/125-UV/UV-400
Text: 125 Specifications Parameter 125-1319-XXX 125-1064-XXX 1319 nm >100, 150, 200 mW TEM00 Single frequency <5 kHz/msec >1000 m <50 MHz/hour <0.05% rms <5% peak-to-peak >10 GHz >30 GHz >1 GHz/sec >30 MHz >30 kHz 1 minute 1064 nm >25 mW TEM00 Single frequency <5 kHz/msec
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125-1319-XXX
125-1064-XXX
TEM00
SM13-P-7/125-UV/UV-400
FS-PM-5121
FS-PM-5121
single mode fiber 3M FS-PM-5121
96216
5121 M
TEM00
SM13-P-7/125-UV/UV-400
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Untitled
Abstract: No abstract text available
Text: I 45E D CENTRONIC LTD m s i f l ? □□□□□is ^ • cent Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed
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LD20-4,
MD25-4,
MD100-4
MD25-4*
MD100-4*
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kingbright L-53
Abstract: L-53 kingbright C1700
Text: Xn^ BRTCTTT E LECTRONI C Typen bezeichnung Type Gehäuse Case L — Emissions farbe Colour STE Wellen länge Wave Length it peak ^^"0 1064HD/A 660 L - 1064 HD/B Ö T\ II 1 K “ L — 1064GD/A 1 565 L — 1064GD/B L - 1064 YD/A \ 1 A 595 L - 1064 YD/B
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c17004
1064HD/A
1064GD/A
1064GD/B
--1064ID/A
--1064ID/B
kingbright L-53
L-53 kingbright
C1700
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centronic osd100 6
Abstract: QD320-4 OSD50-4 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 QD100-4
Text: CENTRONIC INCi E-0 DIV 41E D B Silicon Photodetectors mSESO UGQOBbO 1 M C E N B r-^-nr Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd Y A G laser sensing applications. They offer high pulsed
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LD20-4,
MD25-4,
MD100-4
1064nm
LD20-4*
Vrs180V
centronic osd100 6
QD320-4
OSD50-4
LD20-4
MD25-4
OSD100-4
OSD200-4
OSD300-4
QD100-4
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centronic osd100 6
Abstract: QD320-4 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 OSD50-4 QD100-4
Text: CENTRCNIC INC* E-0 DIV 7~- $ * / ' ¿¿S’ 13E 0 | m S S S G 0Ü0G273 Silicon Photodetectors 3 | Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed
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111S2SO
LD20-4,
MD25-4,
MD100-4
LD20-4*
1064nm
Ls1064nm
centronic osd100 6
QD320-4
LD20-4
MD25-4
OSD100-4
OSD200-4
OSD300-4
OSD50-4
QD100-4
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QD320-4
Abstract: QD100-4 centronic osd100 6 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 QD50-4
Text: i 45E CENTRONIC LTD m S lfi? D DDDDD1S ^ • C E N T T * V / - ‘/ S ' Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed
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LD20-4,
MD25-4,
MD100-4
LD20-4-
9x1013
MD25-4*
MD100-4*
QD320-4
QD100-4
centronic osd100 6
LD20-4
MD25-4
OSD100-4
OSD200-4
OSD300-4
QD50-4
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centronic osd100 6
Abstract: LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 OSD50-4 QD100-4 QD50-4
Text: i CENTRONIC LTD Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed and D.C. responsivity extending to 1150 nm and also provide an extremely low capacitance per unit area.
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LD20-4,
MD25-4,
MD100-4
LD20-4*
MD25-4*
MD100-4*
centronic osd100 6
LD20-4
MD25-4
OSD100-4
OSD200-4
OSD300-4
OSD50-4
QD100-4
QD50-4
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MIL-STD-2020
Abstract: No abstract text available
Text: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width
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3030bl0
000032B
YAG-040B
YAG-100A
YAG-200
YAG-444
MILSTD-750B
25-65-C;
MILSTD-2020
MIL-STD-2020
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YAG-100A
Abstract: 7052 glass MIL-STD-750b YAG-200 YAG100A YAG-100 YAG-444 YAG-040B YAG040B
Text: E G & G S7E JUDSON D • B030b0S 0G0Q177 M ■ YAG Series Features • • • • • • • • • Planar Diffused Large Area Wide Dynamic Range > 5 0 % DC Quantum Efficiency at 1064 nm Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width Oxide Passivated
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3G30b0S
0G0Q177
YAG-040B
YAG-100A
YAG-200
YAG-444
YAG-444
MIL-STD-750B
MILSTD-202D
YAG-100A
7052 glass
YAG-200
YAG100A
YAG-100
YAG-040B
YAG040B
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